Diodes Incorporated DMTH10H032SPSWQ-13

Overview

DMTH10H032SPSWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 100V N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, delivering 32 mΩ R_DS(ON) @ V_GS = 10 V, 25 A continuous drain current at T_C = +25°C, and rated for operation up to +175°C junction temperature - optimized for automotive synchronous rectification and DC-DC converter power stages.

For engineers reviewing the DMTH10H032SPSWQ-13 datasheet, DMTH10H032SPSWQ-13 pinout, DMTH10H032SPSWQ-13 application, or DMTH10H032SPSWQ-13 equivalent, key selection criteria include its wettable flank leadframe for automated optical inspection, 100% production-tested UIS robustness, low C_iss (544 pF) and fast switching (t_R = 2.7 ns), and IATF 16949-certified manufacturing traceability.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for high-voltage automotive power conversion, with gate threshold voltage (V_GS(TH)) tightly specified between 2 V and 4 V to ensure reliable turn-on under low-voltage cold-crank conditions. Its R_DS(ON) exhibits <20% variation across –55°C to +175°C, enabling stable conduction loss in engine bay environments.

The device integrates a low-forward-voltage body diode (V_SD = 0.8–1.0 V @ I_S = 5 A) and supports high-frequency switching via low Q_g (8.0 nC @ V_GS = 10 V) and minimal Crss (6.0 pF), reducing Miller-induced shoot-through risk in half-bridge topologies.

Key Specifications

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals for solder joint inspection and improved heat dissipation (R_θJC = 3.9 °C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL100N10F7 and IXTP110N10T, DMTH10H032SPSWQ-13 trades some R_DS(ON) performance for automotive-grade reliability, AOI-ready packaging, and documented PPAP readiness - making it optimal for volume production in safety-critical vehicle subsystems.

Availability

DMTH10H032SPSWQ-13 is available at Aetrix Electronics and suitable for automotive synchronous rectifiers, 48V DC-DC converters, and ECU power management systems requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant traceability.

Supply support for DMTH10H032SPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions, with design centers across Asia, Europe, and the U.S., and manufacturing certified to IATF 16949 and ISO 9001 standards.

This part belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-reliability 12V/48V vehicle subsystems where thermal resilience, production-tested ruggedness, and automated assembly compatibility are mandatory.

FAQ

What is the maximum allowable gate-source voltage for DMTH10H032SPSWQ-13?

The absolute maximum V_GS rating is ±20 V, as specified in the datasheet's Maximum Ratings table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to +12 V to +15 V during switching and held at 0 V when off, especially in noisy automotive environments where transients may exceed 10 V.

Does DMTH10H032SPSWQ-13 require a gate resistor, and if so, what value is recommended?

Yes - a series gate resistor (R_GEN) is required to control dV/dt and prevent oscillation. The datasheet specifies timing parameters at R_GEN = 6 Ω; for most automotive buck converters, 5–10 Ω provides optimal trade-off between switching speed and EMI suppression. Lower values increase peak gate current and risk ringing; higher values slow turn-on and raise switching loss.

How is thermal performance affected when the exposed drain pad is not soldered to a large copper area?

Without proper thermal connection to ≥1 in² of 2 oz copper, R_θJA degrades from 47 °C/W to >80 °C/W, causing junction temperature to exceed +175°C at just 10 A continuous current. The exposed drain pad must be fully soldered to an internal or bottom-layer thermal plane using ≥6 vias (0.3 mm diameter) to maintain rated power dissipation (38 W at T_C = +25°C).

Can DMTH10H032SPSWQ-13 be used in parallel configurations, and what layout considerations apply?

Yes - its multiple source and drain terminals (pins 1,5,8 and 2,3,6,7) are designed for paralleling. To ensure current sharing, use symmetrical PCB traces of identical length and width for each device's gate, source, and drain paths; place gate resistors close to each gate pin; and avoid shared source inductance by routing individual source returns to a common star point near the controller ground.