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Diodes Incorporated DMTH10H038SPDW-13
- Part No.:
- DMTH10H038SPDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH10H038SPDW-13.pdf
- Description:
- MOSFET 2N-CH 100V 25A PWRDI50
- Quantity:
- Payment:
- Shipping:
Inventory:4,720
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Product details
Overview
DMTH10H038SPDW from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for 100V VDSS, 33mΩ RDS(ON) @ 10V VGS, and 25A continuous drain current at TC = +25°C. It operates up to +175°C junction temperature and features wettable flank terminals for optical solder inspection - optimized for high-efficiency DC-DC converters and motor drive half-bridges.
For engineers reviewing the DMTH10H038SPDW datasheet, DMTH10H038SPDW pinout, DMTH10H038SPDW application, or DMTH10H038SPDW equivalent, key selection criteria include its dual-channel layout with independent gate control, 100% production-tested UIS robustness, low Ciss (544pF) and fast switching (tR = 2.7ns), and AEC-Q101 readiness for automotive power stages.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single thermally enhanced PowerDI5060-8 package with exposed drain pads for low RθJC (3.8°C/W). Each channel supports independent gate drive and shares no internal connection between sources or drains - enabling true half-bridge, synchronous rectifier, or dual-switch topologies.
Its 100V breakdown voltage, 12.5A avalanche current rating (L = 0.3mH), and 23.4mJ EAS support rugged operation under inductive load transients. The device's gate threshold (2–4V) and low Qg (8.0nC @ 10V) enable efficient driving with standard logic-level or dedicated gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100V - Supports 48V and 60V bus systems with ≥20% margin against transient overvoltage. |
| RDS(ON) | 33mΩ max @ VGS = 10V, ID = 10A - Enables <1W conduction loss at 5A per channel in compact thermal layouts. |
| ID (continuous) | 25A @ TC = +25°C - Sustains high-current motor phase or converter output stage without forced airflow. |
| TJ max | +175°C - Qualified for under-hood automotive, industrial motor drives, and high-ambient lighting systems. |
| Ciss | 544pF @ VDS = 50V - Reduces gate drive power and enables >1MHz switching in resonant topologies. |
| tR/tF | 2.7ns / 6.2ns @ RGEN = 6Ω - Minimizes switching transition losses and EMI generation in hard-switched SMPS. |
| EAS | 23.4mJ @ L = 0.3mH - Withstands repetitive inductive turn-off stress in solenoid and BLDC gate-drive circuits. |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UXD), thermally enhanced surface-mount package with dual exposed drain pads and wettable flank sidewalls for automated optical inspection (AOI).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Low-side return path for first MOSFET; electrically isolated from S2 and all gates. |
| D1 | Drain of Channel 1 | Exposed copper pad - primary thermal path to PCB; connects to high-side node or bus rail. |
| G1 | Gate of Channel 1 | High-impedance control input; requires <8.0nC charge for full enhancement at 10V. |
| S2 | Source of Channel 2 | Independent source terminal; enables floating or common-source dual-switch configurations. |
| D2 | Drain of Channel 2 | Second exposed drain pad - allows parallel thermal dissipation and dual high-side routing. |
| G2 | Gate of Channel 2 | Fully isolated gate; supports independent PWM timing or complementary drive without cross-talk. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees minimum 12.5A/23.4mJ avalanche capability per channel - eliminates field failure from unclamped inductive kick. |
| Wettable flank terminals | Matte tin-plated sidewalls on D1/D2 pads enable reliable AOI detection of solder fillet height and voiding. |
| +175°C rated junction | Validated operation across full automotive under-hood ambient range (−40°C to +125°C PCB temp) with derating margin. |
| Low Ciss/Coss ratio | Ciss = 544pF, Coss = 181pF - improves ZVS initiation and reduces capacitive turn-on loss in LLC converters. |
| Lead-free & halogen-free | RoHS 3 compliant (<900ppm Br/Cl, <1000ppm Sb); UL 94V-0 molding compound meets IPC/JEDEC green standards. |
Applications
| Automotive Body Control Module | Industrial BLDC Motor Inverter |
|---|---|
|
Use Scenario: Driving dual solenoids or window lift actuators in BCMs with shared 12V/24V supply. IC Role / Device Role / Timing Role: Dual N-channel switch providing independent high-side or low-side control per actuator coil. Use Value: Eliminates need for discrete high-side drivers; 175°C rating ensures reliability near engine bay heat sources. |
Use Scenario: Half-bridge leg in 3-phase inverter for 1–3kW industrial fans or pumps. IC Role / Device Role / Timing Role: Low-side switch in each phase leg, paired with external high-side FET or integrated driver. Use Value: 33mΩ RDS(ON) and fast tR/tF reduce conduction + switching losses at 20–50kHz PWM frequencies. |
| Server PSU ORing Circuit | Telecom DC-DC Intermediate Bus Converter |
|
Use Scenario: ORing diode replacement in redundant 48V input power paths for telecom servers. IC Role / Device Role / Timing Role: Synchronous rectifier operating in linear mode during current sharing, then fully enhanced during normal conduction. Use Value: 0.9V VSD body diode and low RDS(ON) cut forward drop by >60% vs Schottky, improving efficiency and thermal headroom. |
Use Scenario: Primary-side switch in non-isolated buck or buck-boost converters delivering 12V/24V from 48V intermediate bus. IC Role / Device Role / Timing Role: High-frequency switching element with independent gate control for interleaved multi-phase designs. Use Value: 544pF Ciss and 8.0nC Qg allow clean 1MHz+ operation with minimal gate drive loss and reduced EMI filtering burden. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH10H038LPSQ-13 | Same die, PQFN-8 (3.3×3.3mm) package with lower RθJA (45°C/W) but no wettable flanks. | Better thermal performance on dense boards; unsuitable where AOI of solder joints is mandatory. | Select when board space is constrained and optical inspection is handled via X-ray or functional test. |
| IPB80N04S4-02 | Single-channel 40V/80A TO-263; higher current, lower VDSS, no dual configuration. | Requires two devices + extra layout area to replicate dual functionality; lacks integrated thermal symmetry. | Choose only if system demands >25A per channel and discrete layout is acceptable for cost or qualification reasons. |
Compared with DMTH10H038SPDW, DMTH10H038LPSQ-13 trades AOI capability for superior thermal resistance, while IPB80N04S4-02 sacrifices integration and 100V rating for raw current capacity - making the SPDW uniquely suited for space-constrained, high-reliability dual-switch applications requiring 100V tolerance and production-grade inspection.
Availability
DMTH10H038SPDW is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, and telecom power supplies requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-aligned manufacturing traceability.
Supply support for DMTH10H038SPDW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications where thermal robustness and production test rigor are critical.
FAQ
What is the maximum allowable gate-source voltage for DMTH10H038SPDW?
The absolute maximum VGS is ±20V per the datasheet's Maximum Ratings table. Operation beyond ±16V risks oxide damage, especially at elevated temperatures. For reliable 10V enhancement, use gate drivers with tight regulation and transient clamping (e.g., Zener diodes or integrated clamp circuits) to prevent overshoot during fast switching.
Can DMTH10H038SPDW be used in a synchronous buck converter as both high-side and low-side switches?
No - it is a dual N-channel device with no integrated bootstrap diode or level-shifting circuitry. As a low-side switch, it operates directly from ground-referenced drive. For high-side use, an external isolated gate driver or bootstrap circuit is required to elevate the gate voltage above the drain potential, which adds complexity versus dedicated high-side/N-channel combos.
Does DMTH10H038SPDW meet AEC-Q101 requirements?
Yes - Diodes Incorporated states this part is qualified to AEC-Q101 for stress testing and manufactured in IATF 16949-certified facilities. Full PPAP documentation and change control are available upon request for automotive programs, though final qualification must be confirmed per customer-specific requirements and test plans.
How does the wettable flank feature impact PCB assembly yield?
The matte tin-plated sidewalls on D1 and D2 pads enable automated optical inspection systems to verify solder fillet formation and detect voids or insufficient wetting - increasing first-pass yield by >15% in high-volume SMT lines compared to standard gull-wing or DPAK packages without this feature.
DMTH10H038SPDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 100V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Rds On (Max) @ Id, Vgs:
- 33mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 544pF @ 50V
- Power - Max:
- 2.7W (Ta), 39W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type UXD)
DMTH10H038SPDW-13 FAQ
1.How can I place an order for DMTH10H038SPDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH10H038SPDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH10H038SPDW-13 reliable?
The price and inventory of DMTH10H038SPDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H038SPDW-13 is usually 5 days.
3.What payment methods are accepted for DMTH10H038SPDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H038SPDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH10H038SPDW-13?
DMTH10H038SPDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH10H038SPDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH10H038SPDW-13?
For technical support, including DMTH10H038SPDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H038SPDW-13 requirements.
6.How does Aetrix verify that DMTH10H038SPDW-13 is sourced from the original manufacturer or authorized distributors?
All DMTH10H038SPDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H038SPDW-13 meets industry standards.
7.What is the process for return or replacement of DMTH10H038SPDW-13?
All DMTH10H038SPDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H038SPDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH10H038SPDW-13 part is unused and in its original packaging.
Return procedure for DMTH10H038SPDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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