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Diodes Incorporated DMTH10H038SPDWQ-13

Part No.:
DMTH10H038SPDWQ-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-PowerTDFN
Datasheet:
AetrixDMTH10H038SPDWQ-13.pdf
Description:
MOSFET 2N-CH 100V 25A PWRDI50
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,034

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Product details

Overview

DMTH10H038SPDWQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for 100V VDSS, 33 mΩ RDS(ON) @ VGS = 10 V, and 25 A continuous drain current at TC = +25°C. It is AEC-Q101 qualified, PPAP-capable, and designed for automotive DC-DC converters and motor control circuits operating up to +175°C junction temperature.

For engineers reviewing the DMTH10H038SPDWQ-13 datasheet, DMTH10H038SPDWQ-13 pinout, DMTH10H038SPDWQ-13 application, or DMTH10H038SPDWQ-13 equivalent, key selection criteria include its dual-channel layout with independent gate terminals, wettable flank package for automated optical inspection, 100% production-tested UIS robustness, and thermal resistance of 3.8°C/W (junction-to-case).

Technical Context

This dual MOSFET integrates two matched N-channel silicon devices in a single PowerDI5060-8/SWP (Type UXD) thermally enhanced package with exposed drain pads. Each channel supports independent gate drive (G1/G2), source (S1/S2), and drain (D1/D2) connections, enabling half-bridge, synchronous rectification, or dual-switch topologies without cross-conduction risk.

Its electrical behavior is defined by a gate threshold voltage of 2–4 V, low input capacitance (Ciss = 544 pF), fast switching (tD(ON) = 8.5 ns, tF = 6.2 ns), and body diode with VSD = 0.9–1.0 V @ IS = 10 A - critical for high-frequency automotive power conversion where conduction loss and reverse recovery charge (QRR = 34.3 nC) directly impact efficiency.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 100 V - Supports 48 V automotive bus systems with ≥2× safety margin against transients.
RDS(ON) 33 mΩ max @ VGS = 10 V - Enables <1 W conduction loss at 5.5 A per channel in compact layouts.
ID (continuous) 25 A @ TC = +25°C - Sustains high-current operation when mounted on heatsinked PCB copper.
TJ range −55°C to +175°C - Certified for under-hood environments including engine control units and e-powertrain modules.
RθJC 3.8°C/W - Allows direct thermal path to heatsink via exposed drain pad, reducing junction temperature rise by >30% vs. standard SO-8.
Qg (10 V) 8.0 nC - Low gate charge enables efficient driving with standard 1-A gate drivers at >500 kHz switching.
EAS 23.4 mJ - Confirmed avalanche energy rating ensures reliability during inductive load turn-off in motor drives.

Pinout & Package

Package: PowerDI5060-8/SWP (Type UXD), surface-mount, thermally enhanced with exposed drain pads and wettable flanks for AOI-compatible solder joint inspection.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (S1) Source of Channel 1 Low-side return path for first MOSFET; electrically isolated from S2 for independent half-bridge configuration.
Pin 2 (D2) Drain of Channel 2 High-current output node tied to exposed drain paddle; shares thermal mass with D1 for uniform heat spreading.
Pin 3 (D1) Drain of Channel 1 Primary high-current output node; connected internally to exposed metal pad for minimal RθJC.
Pin 4 (G2) Gate of Channel 2 Independent control input enabling asynchronous or complementary switching of second channel.
Pin 5 (D1) Drain of Channel 1 (redundant) Second connection to same internal drain node - improves current sharing and reduces bond wire inductance.
Pin 6 (D2) Drain of Channel 2 (redundant) Second connection to same internal drain node - enhances thermal coupling and current distribution.
Pin 7 (G1) Gate of Channel 1 Isolated gate terminal allowing separate PWM control; immune to crosstalk from G2 due to physical separation.
Pin 8 (S2) Source of Channel 2 Return path for second MOSFET; enables floating-source configurations such as high-side switch with level-shifting gate drive.

Key Features

Feature Design Value
AEC-Q101 qualification & PPAP support Validated for automotive production use with full change control, traceability, and IATF 16949 manufacturing.
Wettable flank leads Matte tin-plated sidewalls enable 100% automated optical inspection of solder fillets - eliminates X-ray dependency.
100% UIS tested in production Every unit passes unclamped inductive switching stress test (L = 0.3 mH, IAS = 12.5 A), ensuring field robustness.
+175°C maximum junction temperature Enables placement near heat sources (e.g., inverters, transmissions) without derating or forced cooling.
Green, halogen-free construction Meets RoHS 3 (2015/863/EU) and Diodes' "Green" definition: Br+Cl <1500 ppm, Sb <1000 ppm.

Applications

Automotive DC-DC Converters Electric Power Steering (EPS) Motor Drivers

Use Scenario: High-efficiency 12 V to 48 V bidirectional buck-boost converter in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier and primary switch, operating in interleaved phase mode at 300–500 kHz.

Use Value: 33 mΩ RDS(ON) and 8.0 nC Qg reduce conduction and switching losses simultaneously, achieving >95% peak efficiency at 5 kW.

Use Scenario: Three-phase inverter stage controlling brushless DC motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Half-bridge upper/lower switches per phase, driven by isolated gate drivers with dead-time control.

Use Value: Matched dual-channel parameters ensure balanced phase currents; +175°C rating sustains operation during extended parking-mode self-test cycles.

On-Board Charger (OBC) Auxiliary Supplies Engine Control Unit (ECU) Load Switches

Use Scenario: Isolated auxiliary power supply generating 5 V/3.3 V rails from 400 V battery for OBC microcontrollers and sensors.

IC Role / Device Role / Timing Role: Primary-side active clamp switch and secondary-side synchronous rectifier in resonant LLC topology.

Use Value: Low Coss (181 pF) and Crss (6.0 pF) minimize capacitive losses and improve ZVS boundary, extending light-load efficiency.

Use Scenario: High-side load switch managing power delivery to fuel injectors, ignition coils, and solenoid valves in gasoline ECUs.

IC Role / Device Role / Timing Role: Protected high-current switch with integrated body diode for inductive kickback clamping.

Use Value: 23.4 mJ EAS rating absorbs repetitive inductive energy without external snubbers, reducing BOM count and board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6LF8AG 60 V VDSS, 1.2 mΩ RDS(ON), PowerFLAT 5x6 package, no wettable flanks. Limited to 48 V systems; unsuitable for 100 V transient-tolerant designs like 48 V–12 V bidirectional converters. Select only if system max VDS ≤ 65 V and AOI inspection is not required.
IXTP30N10P 100 V VDSS, 32 mΩ RDS(ON), TO-220 package, no AEC-Q101 qualification. Through-hole mounting increases assembly cost and limits high-frequency layout; lacks PPAP documentation. Acceptable for non-automotive industrial prototypes but not for Tier-1 production programs.

Compared with STL220N6LF8AG and IXTP30N10P, DMTH10H038SPDWQ-13 uniquely combines 100 V rating, AEC-Q101 compliance, wettable flanks, and dual-channel integration in a thermally optimized surface-mount package - making it the only option qualified for volume automotive power conversion where space, reliability, and process control are jointly constrained.

Availability

DMTH10H038SPDWQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering motor drivers, and on-board charger auxiliary supplies requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for DMTH10H038SPDWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-reliability, high-temperature automotive subsystems including powertrain electrification, chassis control, and body electronics.

FAQ

What is the maximum allowable gate-source voltage for DMTH10H038SPDWQ-13?

The absolute maximum gate-source voltage is ±20 V, as specified in the Maximum Ratings table. Operation beyond this limit risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10 V for full enhancement and 0 V (or −5 V) for guaranteed turn-off, especially under high dv/dt conditions common in automotive inverters.

Does DMTH10H038SPDWQ-13 support paralleling of channels for higher current?

No - the two channels share a common thermal die but have electrically isolated sources (S1/S2) and gates (G1/G2); they are not matched for current sharing under parallel operation. Each channel must be driven independently and sized for its own load. Paralleling requires external current-sensing and active balancing, which is not supported by the device architecture.

How does the wettable flank feature improve manufacturing yield?

The matte tin-plated sidewalls on all eight leads allow automated optical inspection (AOI) systems to verify solder fillet height and wetting angle directly - eliminating reliance on X-ray for hidden-joint verification. This reduces final test cycle time by ~40% and increases early defect detection rate in SMT lines handling high-volume automotive PCBAs.

Can DMTH10H038SPDWQ-13 replace single-channel MOSFETs in existing designs?

Yes, but only with layout revision: its dual-channel structure requires separate gate and source routing for each channel, and the PowerDI5060-8 footprint differs from SO-8 or TO-252. Direct replacement is possible in new designs targeting space-constrained automotive modules where dual functionality and thermal performance justify the package change.

DMTH10H038SPDWQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Bulk
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Rds On (Max) @ Id, Vgs:
33mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
544pF @ 50V
Power - Max:
2.7W (Ta), 39W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8 (Type UXD)

DMTH10H038SPDWQ-13 FAQ

1.How can I place an order for DMTH10H038SPDWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H038SPDWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H038SPDWQ-13 reliable?

The price and inventory of DMTH10H038SPDWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H038SPDWQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH10H038SPDWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H038SPDWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H038SPDWQ-13?

DMTH10H038SPDWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H038SPDWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H038SPDWQ-13?

For technical support, including DMTH10H038SPDWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H038SPDWQ-13 requirements.

6.How does Aetrix verify that DMTH10H038SPDWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH10H038SPDWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H038SPDWQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH10H038SPDWQ-13?

All DMTH10H038SPDWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H038SPDWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H038SPDWQ-13 part is unused and in its original packaging.

Return procedure for DMTH10H038SPDWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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