Diodes Incorporated DMTH10H072LPS-13

Overview

DMTH10H072LPS from Diodes Incorporated is a 100V, 20A N-channel enhancement-mode MOSFET in PowerDI®5060-8 (SWP) package, featuring 57 mΩ R_DS(ON) at V_GS = 10 V and rated for continuous operation up to +175°C. It serves as a high-efficiency load switch or synchronous rectifier in notebook battery management and DC-DC converters.

For engineers reviewing the DMTH10H072LPS datasheet, DMTH10H072LPS pinout, DMTH10H072LPS application, or DMTH10H072LPS equivalent, key selection criteria include its low on-resistance across temperature, 100% unclamped inductive switching rating, thermal robustness at 175°C junction, and optimized gate charge (5.1 nC at V_GS = 10 V) for fast switching with reduced drive loss.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while maintaining controlled Q_g (5.1 nC) and Q_gd (1.7 nC), enabling efficient hard-switching in high-frequency DC-DC topologies. Its body diode exhibits t_RR = 37.5 ns and Q_RR = 86.8 nC under 300 A/μs di/dt, supporting synchronous rectification with low reverse recovery loss.

The device is characterized for operation from –55°C to +175°C, with R_DS(ON) normalized to 2.4× at 175°C vs. 25°C (V_GS = 10 V), and features a thermally enhanced exposed drain pad delivering R_θJC = 2.9°C/W - critical for compact power stages requiring minimal heatsinking.

Key Specifications

Pinout & Package

Package: PowerDI®5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), matte tin annealed terminals, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH10H072LPS-7, the -13 variant offers better logistics efficiency for volume production, while DMN3020LSD-13 trades voltage capability for lower on-resistance in sub-30 V designs - making DMTH10H072LPS the optimal choice for 48–100 V industrial and computing power stages requiring thermal resilience and avalanche ruggedness.

Availability

DMTH10H072LPS is available at Aetrix Electronics and suitable for notebook battery management, industrial PLC I/O modules, and automotive body control modules requiring stable component supply, long-term lifecycle support, and AEC-Q200-aligned qualification readiness.

Supply support for DMTH10H072LPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerDI® high-power trench-MOSFET product line, engineered for high-efficiency, high-temperature power switching in computing, industrial, and automotive applications where thermal robustness and avalanche reliability are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH10H072LPS supports 14 A continuous drain current at T_C = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI5060-8 package under real-world PCB thermal conditions, and must be validated using the provided R_θJC = 2.9°C/W and transient thermal impedance curves.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is recommended to control dV/dt and prevent parasitic oscillation, especially in high-speed switching applications. The datasheet specifies R_g = 3 Ω for dynamic timing measurements; typical design values range from 2.2 Ω to 10 Ω depending on driver strength and EMI requirements. No internal gate resistor is integrated.

Is the PowerDI5060-8 (SWP) package lead-free and RoHS-compliant?

Yes - the DMTH10H072LPS uses matte tin annealed terminals over copper leadframe and a halogen- and antimony-free green molding compound, meeting EU RoHS 3 (2015/863/EU), JEDEC J-STD-020 Level 1 moisture sensitivity, and UL 94V-0 flammability standards, as confirmed in the Mechanical Data section.

Can this MOSFET be used in avalanche mode for energy clamping?

Yes - it is fully rated for 100% unclamped inductive switching with I_AS = 6 A and E_AS = 1.8 mJ at T_J = 25°C. Avalanche operation is guaranteed across the full temperature range, but repetitive stress requires thermal verification using the transient thermal impedance curve (Figure 13) to avoid cumulative junction overheating.