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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH10H1M7STLW-13

Name: DMTH10H1M7STLW-13
Brand: Diodes Incorporated
SKU: DMTH10H1M7STLW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH10H1M7STLW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: DMTH10H1M7STLW-13.pdf

Description:: MOSFET BVDSS: 61V~100V POWERDI10

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Product details

Overview

DMTH10H1M7STLW-13 from Diodes Incorporated is a 100V N-channel enhancement-mode power MOSFET in POWERDI®1012-8 (TOLL) package, rated for 250A continuous drain current at TC = +25°C, with R_DS(ON) of 1.4 mΩ (typ) at V_GS = 10V and junction temperature up to +175°C. It is engineered for high-efficiency notebook battery power management and load switching applications where low conduction loss and robust thermal performance are critical.

For engineers reviewing the DMTH10H1M7STLW-13 datasheet, DMTH10H1M7STLW-13 pinout, DMTH10H1M7STLW-13 application, or DMTH10H1M7STLW-13 equivalent, key selection criteria include its 1.4 mΩ R_DS(ON), 100% UIS-tested ruggedness, wettable flank terminals for automated optical inspection, +175°C operation rating, and TOLL-package thermal resistance of 0.6°C/W (R_θJC).

Technical Context

This MOSFET employs a trench-gate silicon process optimized for ultra-low R_DS(ON) while preserving fast switching behavior-evidenced by Q_g = 147 nC, Q_gd = 32 nC, and t_F = 69 ns. Its internal structure integrates a robust body diode with V_SD = 0.8 V (typ) at I_S = 30 A and t_RR = 91 ns under defined di/dt conditions.

The device operates across -55°C to +175°C junction range and is characterized for stable R_DS(ON) behavior over temperature (normalized variation <2.4× from -55°C to +175°C at V_GS = 10V). Its 0.6°C/W R_θJC enables direct thermal coupling to heatsinks via the exposed drain pad, supporting high-power DC-DC and motor control topologies without discrete thermal interface materials.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Supports input rails up to 80 V DC with 20% margin for transient spikes in industrial and notebook power systems.
R_DS(ON)	1.4 mΩ (typ) @ V_GS = 10 V - Delivers ≤0.9 W conduction loss at 30 A, enabling >98% efficiency in high-current synchronous buck stages.
I_D (cont)	250 A @ T_C = +25°C - Enables single-device replacement of paralleled SO-8 or DPAK MOSFETs in compact load switch designs.
Q_g	147 nC - Requires gate driver capable of ≥2 A peak sourcing/sinking to achieve sub-100 ns switching transitions at 30 A load.
R_θJC	0.6°C/W - Allows direct mounting to copper heatsink or PCB thermal plane, limiting junction rise to ≤106°C at 250 W dissipation.
T_J max	+175°C - Qualified for under-hood automotive modules and high-ambient industrial controllers without derating below 150°C ambient.
E_AS	799.4 mJ - Withstands repetitive inductive turn-off energy in motor drive half-bridges without avalanche failure.

Pinout & Package

Package: POWERDI®1012-8 (TOLL), 8-terminal surface-mount package with exposed drain pad (D) on bottom for thermal and electrical connection. Wettable flank side terminals enable solder joint inspection via AOI.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Source (S)	Seven parallel source terminals reduce package inductance and improve current sharing in high-di/dt switching.
8	Gate (G)	Single gate terminal with R_g = 2.5 Ω (typ); layout must minimize loop inductance to suppress ringing during hard switching.
Bottom Pad	Drain (D)	Exposed copper drain pad provides primary thermal path (R_θJC = 0.6°C/W) and carries full 250 A current path.

Key Features

Feature	Design Value
100% UIS tested	Every unit validated for unclamped inductive switching at I_AS = 73 A and E_AS = 799.4 mJ-ensures field reliability in motor and solenoid drive circuits.
Wettable flank terminals	Side-plated leads allow automated optical inspection of solder fillets-critical for zero-defect manufacturing in notebook and server power assemblies.
+175°C operation rating	Full parametric performance guaranteed up to T_J = +175°C-eliminates thermal derating in sealed enclosures or near heat sources.
Lead-free & green compliant	Meets RoHS 3 (2015/863/EU), halogen-free (<900 ppm Br/Cl, <1000 ppm Sb), and UL 94V-0 mold compound-supports global environmental compliance programs.

Applications

Notebook Battery Protection

High-Current Load Switch

Use Scenario: Bidirectional battery protection circuit in ultrabook platforms, managing charge/discharge paths between Li-ion pack and system bus.

IC Role / Device Role / Timing Role: Primary high-side load switch controlling main power rail; handles 200 A peak inrush and reverse-current blocking.

Use Value: 1.4 mΩ R_DS(ON) limits voltage drop to <300 mV at 200 A, preserving battery runtime and enabling accurate coulomb counting.

Use Scenario: Hot-swap controller for 12 V/48 V server backplane power domains requiring controlled ramp-up and fault isolation.

IC Role / Device Role / Timing Role: Low-loss, high-current pass element in active OR-ing and power-path management ICs.

Use Value: 0.6°C/W R_θJC allows direct thermal coupling to chassis, sustaining 150 A continuous without external heatsink-reducing BOM count by 2–3 components.

DC-DC Converter High-Side Switch

Brushless DC Motor Phase Leg

Use Scenario: High-frequency synchronous buck converter in GPU VRMs, operating at 500 kHz with 30–50 A output.

IC Role / Device Role / Timing Role: High-side power switch in multiphase topology; switched with 10 V gate drive and tight dead-time control.

Use Value: Low Q_gd/Q_g ratio (22%) minimizes Miller-induced shoot-through risk, enabling stable operation at 100 ns dead time.

Use Scenario: Half-bridge upper switch in 24 V BLDC fan driver for data center cooling systems, operating continuously at 85°C ambient.

IC Role / Device Role / Timing Role: Fast-switching, thermally robust phase-leg switch handling 100 A peak currents and 10 kHz PWM.

Use Value: +175°C T_J rating and normalized R_DS(ON) stability ensure consistent torque delivery without thermal throttling across full ambient range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTN200N10L2	TO-263 package; R_DS(ON) = 1.6 mΩ @ 10 V; R_θJC = 0.5°C/W; no wettable flanks.	Larger footprint (10.16 × 15.24 mm vs. 11.68 × 9.90 mm); requires manual solder inspection.	Select when legacy TO-263 layout reuse is prioritized over AOI compatibility and board space savings.
IPB180N10N3	PG-HSOF-8 package; R_DS(ON) = 1.3 mΩ @ 10 V; T_J max = +175°C; Q_g = 160 nC.	Higher gate charge increases driver losses; same thermal resistance but different pad layout.	Prefer when higher R_DS(ON) margin is needed and existing PG-HSOF-8 reflow profile can be reused.

Compared with IXTN200N10L2 and IPB180N10N3, DMTH10H1M7STLW-13 delivers superior AOI support via wettable flanks, tighter board area utilization in TOLL format, and lower Q_gd for reduced Miller risk-making it optimal for space-constrained, high-volume notebook and server power designs.

Availability

DMTH10H1M7STLW-13 is available at Aetrix Electronics and suitable for notebook battery protection, high-current load switching, DC-DC converter high-side switching, and brushless DC motor phase-leg applications requiring stable component supply and long-term production continuity.

Supply support for DMTH10H1M7STLW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerTrench®-based TOLL portfolio, developed specifically for high-current, high-efficiency power conversion and load management in portable computing, enterprise infrastructure, and industrial motor control systems.

FAQ

What is the maximum safe operating current for DMTH10H1M7STLW-13 at 100°C case temperature?

At T_C = +100°C, the datasheet specifies I_D = 176 A continuous. This derating accounts for thermal resistance and junction-to-case temperature rise. Operation above this value risks exceeding the +175°C absolute maximum junction temperature, especially under high-duty-cycle or poor heatsinking conditions.

Does DMTH10H1M7STLW-13 require a negative gate voltage for reliable turn-off in high-noise environments?

No. The device has a gate threshold voltage V_GS(TH) of 2–4 V and is fully enhanced at V_GS = 10 V. While a negative turn-off bias (e.g., –5 V) improves noise immunity, it is not required-the gate oxide is rated for ±20 V, and standard 0 V/10 V drive suffices for notebook and server applications per the datasheet's recommended operating conditions.

Can DMTH10H1M7STLW-13 replace older DPAK MOSFETs in existing layouts without redesign?

No. The POWERDI1012-8 (TOLL) package has different dimensions (11.68 × 9.90 mm), pad layout, and thermal pad configuration versus DPAK (6.5 × 6.1 mm). Direct replacement would require PCB redesign, stencil revision, and requalification of thermal performance and solder joint integrity due to differing thermal mass and wettable flank geometry.

Is the body diode optimized for synchronous rectification in buck converters?

The integrated body diode has V_SD = 0.8 V (typ) at 30 A and t_RR = 91 ns, making it suitable for non-synchronous operation and moderate-frequency freewheeling. However, it is not optimized for high-frequency synchronous rectification-external Schottky or dedicated SR controllers are recommended when ZVS or <100 ns recovery is required.

DMTH10H1M7STLW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 250A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 147 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9871 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 6W (Ta), 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: POWERDI1012-8

DMTH10H1M7STLW-13 FAQ

1.How can I place an order for DMTH10H1M7STLW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H1M7STLW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H1M7STLW-13 reliable?

The price and inventory of DMTH10H1M7STLW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H1M7STLW-13 is usually 5 days.

3.What payment methods are accepted for DMTH10H1M7STLW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H1M7STLW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H1M7STLW-13?

DMTH10H1M7STLW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H1M7STLW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H1M7STLW-13?

For technical support, including DMTH10H1M7STLW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H1M7STLW-13 requirements.

6.How does Aetrix verify that DMTH10H1M7STLW-13 is sourced from the original manufacturer or authorized distributors?

All DMTH10H1M7STLW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H1M7STLW-13 meets industry standards.

7.What is the process for return or replacement of DMTH10H1M7STLW-13?

All DMTH10H1M7STLW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H1M7STLW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H1M7STLW-13 part is unused and in its original packaging.

Return procedure for DMTH10H1M7STLW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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