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Diodes Incorporated DMTH10H1M7STLWQ-13

Part No.:
DMTH10H1M7STLWQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerSFN
Datasheet:
AetrixDMTH10H1M7STLWQ-13.pdf
Description:
MOSFET BVDSS: 61V~100V POWERDI10
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,363

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Product details

Overview

DMTH10H1M7STLWQ-13 from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in POWERDI®1012-8 (TOLL) package, rated for 100 V VDSS, 1.4–1.85 mΩ RDS(ON) @ VGS = 10 V, and 250 A continuous drain current at TC = +25°C. It operates up to +175°C junction temperature and supports automotive motor control, DC-DC converters, and high-efficiency power management systems.

For engineers reviewing the DMTH10H1M7STLWQ-13 datasheet, DMTH10H1M7STLWQ-13 pinout, DMTH10H1M7STLWQ-13 application, or DMTH10H1M7STLWQ-13 equivalent, key selection criteria include its 0.6 °C/W RθJC, 100% production-tested UIS robustness, wettable flank terminals for automated optical inspection, and IATF 16949-certified manufacturing traceability.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-current automotive power stages. Its gate threshold voltage (2–4 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers while maintaining stable turn-on under wide temperature variation (–55°C to +175°C).

The device integrates a robust body diode with 250 A continuous forward current rating and 91 ns reverse recovery time (IF = 25 A, di/dt = 100 A/µs), supporting synchronous rectification and bidirectional energy transfer in isolated DC-DC topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V and 60 V nominal automotive bus systems.
RDS(ON) 1.4–1.85 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 250 A, critical for minimizing thermal stress in compact power modules.
ID (continuous) 250 A @ TC = +25°C - Supports high-current motor phase legs and primary-side switches without external paralleling.
RθJC 0.6 °C/W - Allows direct thermal coupling to heatsinks or PCB copper planes, enabling >200 W steady-state power dissipation with minimal ΔT.
EAS 799.4 mJ - Confirmed avalanche energy rating ensures reliable operation during inductive load switching transients in motor drives.
Qg 147 nC - Optimized gate charge supports efficient 100–500 kHz switching in high-efficiency DC-DC converters with moderate driver strength.
TJ max +175°C - Meets under-hood automotive ambient requirements and enables derating flexibility in thermally constrained enclosures.

Pinout & Package

Package: POWERDI®1012-8 (TOLL) - 8-terminal surface-mount package with exposed drain pad for enhanced thermal performance and wettable flank side walls for solder joint inspection.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4, 5, 6, 7 Source (S) Seven parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications like motor control.
8 Gate (G) Single gate input with 2.5 Ω typical gate resistance; designed for low-noise, controlled turn-on/turn-off with standard gate drivers.
Exposed Pad (D) Drain (D) Thermally and electrically connected drain pad occupies >70% of bottom area; serves as primary heat path and high-current return node.

Key Features

Feature Design Value
AEC-Q101 qualification & PPAP support Validated for automotive production use with full change control, IATF 16949 manufacturing, and documented reliability testing.
100% production UIS testing Every unit undergoes unclamped inductive switching stress test (L = 0.3 mH, IAS = 73 A), ensuring field robustness without screening fallout.
Wettable flank terminals Side-wall plating enables automated optical inspection (AOI) of solder fillets, improving yield and reducing post-reflow rework in SMT lines.
Low RDS(ON) × Qg figure-of-merit 270 µΩ·nC - Balances conduction and switching losses for high-frequency, high-current operation in 48 V–60 V automotive converters.
Halogen- and antimony-free "Green" construction <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Complies with EU RoHS 3 and automotive environmental directives without compromising thermal or electrical performance.

Applications

Electric Power Steering (EPS) 48 V Mild Hybrid DC-DC Converter

Use Scenario: High-current H-bridge driver for brushless DC motor in steering assist system, operating continuously at 150 A peak with frequent transient loads.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in three-phase inverter stage, handling bidirectional current and regenerative braking energy.

Use Value: 1.4 mΩ RDS(ON) minimizes I²R heating at 150 A, while +175°C rating ensures reliability in sealed EPS module enclosures near engine compartments.

Use Scenario: Primary-side synchronous rectifier in isolated bidirectional DC-DC converter linking 12 V starter battery and 48 V Li-ion traction auxiliary supply.

IC Role / Device Role / Timing Role: High-current, high-efficiency switch in phase-shifted full-bridge topology operating at 200 kHz with ZVS capability.

Use Value: 147 nC Qg and 32 nC Qgd enable clean zero-voltage switching transitions, reducing EMI and improving efficiency above 96% at 3 kW output.

Onboard Charger (OBC) Input Stage Automotive HVAC Blower Drive

Use Scenario: Active front-end (AFE) switch in PFC stage of 6.6 kW OBC, handling 40 A RMS line current with high dv/dt stress.

IC Role / Device Role / Timing Role: Fast-switching, high-voltage switch in totem-pole PFC configuration requiring low Crss and tight gate drive timing control.

Use Value: 58 pF Crss and 9871 pF Ciss provide predictable Miller effect behavior, enabling stable gate drive design across –40°C to +125°C ambient.

Use Scenario: Half-bridge driver for permanent-magnet DC fan motor in climate control system, operating in PWM mode with 20 kHz carrier frequency.

IC Role / Device Role / Timing Role: Low-RDS(ON) power switch delivering up to 80 A peak current during startup surge and stall conditions.

Use Value: 799.4 mJ EAS withstands repeated stall-induced inductive kickback without degradation, extending service life beyond 10,000 hours.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXTN200N10L2 100 V, 2.2 mΩ RDS(ON), TO-263 package, no wettable flanks, higher RθJC (0.75 °C/W) Larger footprint and manual optical inspection required; less suitable for high-density automotive PCBs with AOI constraints. Prefer when legacy TO-263 layout reuse is prioritized over thermal density and automated assembly.
STL220N10F7 100 V, 1.7 mΩ RDS(ON), PowerFLAT™ 8x8 HV package, AEC-Q101 qualified, but only 150°C TJ max Limited high-temperature operation margin in under-hood environments exceeding +150°C ambient. Select when cost sensitivity outweighs extreme thermal requirement and board space allows larger 8x8 mm footprint.

Compared with IXTN200N10L2 and STL220N10F7, DMTH10H1M7STLWQ-13 delivers superior thermal density (0.6 °C/W), full +175°C capability, and AOI-ready wettable flanks-making it optimal for next-generation compact, high-reliability automotive power modules where thermal headroom and automated manufacturing are critical.

Availability

DMTH10H1M7STLWQ-13 is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid DC-DC conversion, and onboard charger input stages requiring stable component supply, long-term automotive lifecycle support, and AEC-Q101-compliant traceability.

Supply support for DMTH10H1M7STLWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-current, high-temperature automotive subsystems-including EPS, HVAC, and 48 V energy management-where AEC-Q101 compliance, thermal resilience, and production-grade robustness are mandatory.

FAQ

What is the maximum continuous drain current rating for DMTH10H1M7STLWQ-13 at 100°C case temperature?

At TC = +100°C, the maximum continuous drain current is 176 A, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the POWERDI1012-8 package and ensures safe operation within the 0.6 °C/W RθJC constraint and +175°C maximum junction temperature.

Does DMTH10H1M7STLWQ-13 support gate drive with 5 V logic-level controllers?

Yes-the gate threshold voltage ranges from 2 V to 4 V, allowing reliable turn-on with 5 V microcontroller outputs or gate drivers. However, full RDS(ON) specification (1.4–1.85 mΩ) requires VGS = 10 V; for optimal conduction loss, a 10 V gate drive is recommended in high-current applications.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No-the exposed drain pad is internally connected to the MOSFET's drain terminal and must be soldered to a dedicated, non-grounded copper pour on the PCB. It is not isolated and should never be tied directly to system ground unless the circuit topology explicitly requires drain-referenced grounding.

How does the 100% production UIS test impact field reliability in motor control applications?

Each unit undergoes a controlled unclamped inductive switching stress test (IAS = 73 A, L = 0.3 mH), verifying avalanche ruggedness before shipment. This eliminates latent weaknesses that could cause failure during motor stall or short-circuit events, significantly improving long-term reliability in safety-critical EPS and HVAC systems.

DMTH10H1M7STLWQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerSFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
250A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
147 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
9871 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
6W (Ta), 250W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI1012-8

DMTH10H1M7STLWQ-13 FAQ

1.How can I place an order for DMTH10H1M7STLWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H1M7STLWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H1M7STLWQ-13 reliable?

The price and inventory of DMTH10H1M7STLWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H1M7STLWQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH10H1M7STLWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H1M7STLWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H1M7STLWQ-13?

DMTH10H1M7STLWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H1M7STLWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H1M7STLWQ-13?

For technical support, including DMTH10H1M7STLWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H1M7STLWQ-13 requirements.

6.How does Aetrix verify that DMTH10H1M7STLWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH10H1M7STLWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H1M7STLWQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH10H1M7STLWQ-13?

All DMTH10H1M7STLWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H1M7STLWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H1M7STLWQ-13 part is unused and in its original packaging.

Return procedure for DMTH10H1M7STLWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH10H1M7STLWQ-13 Tags

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