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Diodes Incorporated DMTH10H2M2LPSW-13
- Part No.:
- DMTH10H2M2LPSW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH10H2M2LPSW-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V POWERDI50
- Quantity:
- Payment:
- Shipping:
Inventory:8,928
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Product details
Overview
DMTH10H2M2LPSW from Diodes Incorporated is a 100V, N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for continuous drain current of 153A at TC = +25°C and RDS(ON) of 3.2mΩ at VGS = 10V. It features +175°C maximum junction temperature, 100% production-tested UIS robustness, and wettable flank terminals for automated optical inspection - deployed in engine management systems and high-current DC-DC converters.
For engineers reviewing the DMTH10H2M2LPSW datasheet, DMTH10H2M2LPSW pinout, DMTH10H2M2LPSW application, or DMTH10H2M2LPSW equivalent, key selection criteria include its low RDS(ON) at 4.5V (4.5mΩ), fast switching times (tD(OFF) = 94ns), body diode recovery performance (QRR = 172nC), and thermal resistance RθJC = 1.0°C/W for high-power automotive and industrial power stages.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss while maintaining controlled gate charge (Qg = 116nC at VGS = 10V) and fast turn-off (tF = 93ns). Its internal structure integrates a low-VSD body diode (0.7–1.2V at 20A) with tRR = 74ns and QRR = 172nC under 100A/μs di/dt conditions.
The device is characterized for operation across –55°C to +175°C, with RDS(ON) normalized variation ≤2.2× over that range at VGS = 10V. Its PowerDI5060-8/SWP package delivers 150W power dissipation at TC = +25°C and supports solder-reflow compatibility per J-STD-020 Level 1 moisture sensitivity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100V - Withstands up to 100V drain-source blocking voltage before avalanche onset. |
| RDS(ON) @ VGS = 10V | 3.2mΩ max - Enables <1.5W conduction loss at 153A ID, critical for high-efficiency power stages. |
| RDS(ON) @ VGS = 4.5V | 4.5mΩ max - Supports logic-level gate drive in 5V-control systems without level-shifting. |
| Qg @ VGS = 10V | 116nC - Determines gate driver power requirement and switching transition time in hard-switched topologies. |
| tD(OFF) | 94ns - Limits dead-time requirements in synchronous buck or half-bridge configurations. |
| EAS | 998.5mJ - Quantifies single-pulse avalanche energy handling capability for inductive load transients. |
| RθJC | 1.0°C/W - Enables direct heatsink mounting of the exposed drain pad for high-power thermal management. |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad and wettable flank leads for AOI-compatible solder joint verification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Drain (D) | Five parallel drain terminals connected to internal die drain metallization and exposed thermal pad - primary current path and thermal conduction path to PCB heatsink. |
| 4 | Gate (G) | Single gate input controlling channel conduction; requires <116nC total charge for full turn-on at 10V. |
| 5, 6 | Source (S) | Two dedicated source terminals providing low-inductance return path for high di/dt switching and body diode conduction. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated junction temperature | Enables reliable operation in under-hood automotive environments and sealed industrial enclosures without derating. |
| 100% production UIS testing | Guarantees avalanche ruggedness for unclamped inductive switching events in motor drives and solenoid controls. |
| Wettable flank terminals | Supports automated optical inspection of solder fillet height and coplanarity on all eight leads. |
| Low Ciss (6239pF) & Crss (44pF) | Reduces Miller effect and improves gate drive stability in high-frequency (>500kHz) switching applications. |
| RoHS-compliant, halogen-free "Green" construction | Meets EU Directive 2015/863/EU with Br+Cl <1500ppm and Sb <1000ppm - suitable for automotive OEM compliance programs. |
Applications
| Engine Management Systems | Body Control Modules |
|---|---|
Use Scenario: High-side load switch for fuel pump, radiator fan, or turbocharger actuator control in ICE vehicles. IC Role / Device Role / Timing Role: Power switch handling 100A+ pulsed loads with fast turn-off (<100ns) to prevent back-EMF damage during PWM interruption. Use Value: 3.2mΩ RDS(ON) limits I²R loss to <3.3W at 100A, reducing thermal stress in space-constrained engine bays. |
Use Scenario: Low-side driver for LED headlamp matrix or HVAC blower motor in 12V/24V vehicle architectures. IC Role / Device Role / Timing Role: N-channel MOSFET used in high-current, high-duty-cycle switching with integrated body diode freewheeling. Use Value: 172nC QRR and 74ns tRR minimize reverse-recovery losses during PWM commutation, improving system efficiency by ~1.2% vs. legacy parts. |
| Industrial DC-DC Converters | Server VRMs |
Use Scenario: Primary-side synchronous rectifier in isolated 48V-to-12V telecom power supplies operating at 300kHz. IC Role / Device Role / Timing Role: High-current, low-RDS(ON) switch enabling >96% conversion efficiency at 100A output. Use Value: RθJC = 1.0°C/W allows direct thermal coupling to heatsink, sustaining 150W dissipation without active cooling. |
Use Scenario: Multiphase buck converter high-side switch in AI accelerator card VRMs delivering >300A to GPU cores. IC Role / Device Role / Timing Role: Logic-level compatible (4.5V drive) MOSFET supporting fast transient response and low gate drive loss. Use Value: 4.5mΩ RDS(ON) at 4.5V enables efficient operation with standard 5V gate drivers, eliminating need for bootstrap or level-shift circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTQ150N10P | TO-264 package; higher RDS(ON) (4.2mΩ); no wettable flanks; RθJC = 0.4°C/W but larger footprint. | Preferred for bolt-down heatsink integration where board area is less constrained than thickness. | Select when mechanical mounting rigidity and ultra-low thermal resistance outweigh AOI requirements and PCB space constraints. |
| STL220N6LF8AG | PowerFLAT 8x8 HV package; lower VDSS (60V); RDS(ON) = 1.8mΩ at 10V; automotive AEC-Q101 qualified. | Targeted at 48V mild-hybrid systems where 100V rating is unnecessary and AEC-Q101 certification is mandatory. | Choose only if system bus voltage remains ≤60V and automotive qualification is required - not drop-in for 100V designs. |
Compared with IXTQ150N10P and STL220N6LF8AG, DMTH10H2M2LPSW uniquely balances 100V rating, wettable flank AOI support, and 4.5V logic-level drive in a compact 5.1mm × 6.4mm footprint - making it optimal for space-limited, high-reliability automotive and industrial power stages requiring production traceability and thermal efficiency.
Availability
DMTH10H2M2LPSW is available at Aetrix Electronics and suitable for engine management systems, body control modules, and industrial DC-DC converters requiring stable component supply, automotive-grade reliability, and high-current switching performance.
Supply support for DMTH10H2M2LPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
This MOSFET belongs to Diodes' PowerDI® high-current portfolio, engineered specifically for automotive under-hood and industrial power conversion applications demanding extended temperature operation, avalanche ruggedness, and AOI-compatible packaging.
FAQ
What is the maximum continuous drain current at +100°C case temperature?
The DMTH10H2M2LPSW supports 108A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI5060-8 package and must be validated against actual PCB layout and heatsinking in the target application.
Does this MOSFET require gate resistors for EMI control in hard-switched applications?
Yes - due to its low gate resistance (Rg = 1.1Ω) and high dV/dt capability, a series gate resistor (typically 2.2–10Ω) is recommended to dampen ringing and limit peak gate current during turn-on/turn-off, especially in high-frequency (>200kHz) or high-di/dt circuits.
Is the body diode suitable for synchronous rectification in DC-DC converters?
The body diode has VSD = 0.7–1.2V at 20A and tRR = 74ns, making it usable for low-frequency freewheeling, but not optimized for high-frequency synchronous rectification where discrete Schottky or GaN-based solutions offer lower loss. Use only in non-critical, low-dV/dt freewheel paths.
What is the significance of the "Wettable Flank" feature in production?
Wettable flanks enable automated optical inspection (AOI) of solder fillet formation on all eight leads, verifying coplanarity and solder volume without X-ray. This reduces field failure risk in high-volume automotive manufacturing and satisfies IATF 16949 process validation requirements.
DMTH10H2M2LPSW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 153A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 116 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6239 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4W (Ta), 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI5060-8 (Type UX)
DMTH10H2M2LPSW-13 FAQ
1.How can I place an order for DMTH10H2M2LPSW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH10H2M2LPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH10H2M2LPSW-13 reliable?
The price and inventory of DMTH10H2M2LPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H2M2LPSW-13 is usually 5 days.
3.What payment methods are accepted for DMTH10H2M2LPSW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H2M2LPSW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH10H2M2LPSW-13?
DMTH10H2M2LPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH10H2M2LPSW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH10H2M2LPSW-13?
For technical support, including DMTH10H2M2LPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H2M2LPSW-13 requirements.
6.How does Aetrix verify that DMTH10H2M2LPSW-13 is sourced from the original manufacturer or authorized distributors?
All DMTH10H2M2LPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H2M2LPSW-13 meets industry standards.
7.What is the process for return or replacement of DMTH10H2M2LPSW-13?
All DMTH10H2M2LPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H2M2LPSW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH10H2M2LPSW-13 part is unused and in its original packaging.
Return procedure for DMTH10H2M2LPSW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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