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Diodes Incorporated DMTH10H2M2LPSWQ-13
- Part No.:
- DMTH10H2M2LPSWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH10H2M2LPSWQ-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V POWERDI50
- Quantity:
- Payment:
- Shipping:
Inventory:3,615
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Product details
Overview
DMTH10H2M2LPSWQ-13 from Diodes Incorporated is a 100V, N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for continuous drain current of 153A at TC = +25°C and RDS(ON) of 3.2mΩ at VGS = 10V. It is AEC-Q101 qualified, PPAP-capable, and designed for high-reliability automotive power stages including engine management and DC-DC converters operating up to +175°C junction temperature.
For engineers reviewing the DMTH10H2M2LPSWQ-13 datasheet, DMTH10H2M2LPSWQ-13 pinout, DMTH10H2M2LPSWQ-13 application, or DMTH10H2M2LPSWQ-13 equivalent, key selection criteria include its 100% production-tested UIS robustness, wettable flank terminals for automated optical inspection, low 4.5mΩ RDS(ON) at 4.5V gate drive, and IATF16949-certified manufacturing traceability.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-current automotive power conversion. Its 100V BVDSS rating supports 48V and 60V system-level bus protection, while the 1° C/W RθJC thermal resistance enables high-power density mounting on exposed copper pads.
The device integrates a low-Qgd/Qg ratio (29nC/116nC) and 44pF Crss to support hard-switched topologies with reduced Miller-induced shoot-through risk. Its body diode exhibits tRR = 74ns and QRR = 172nC under 100A/μs dI/dt - critical for synchronous rectification and bidirectional DC-DC control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 100V - Withstands transient overvoltage spikes in 48V automotive systems without breakdown. |
| RDS(ON) Max | 3.2mΩ @ VGS = 10V - Enables <1.5W conduction loss at 153A, reducing heatsink requirements. |
| ID (TC = +25°C) | 153A - Supports high-current motor drivers and starter-generator inverters without parallel devices. |
| TJ Operating Range | –55°C to +175°C - Certified for under-hood applications including turbocharger ECUs and transmission control modules. |
| RθJC | 1.0°C/W - Allows direct thermal coupling to PCB copper pour or heatsink for >100W continuous dissipation. |
| UIS Tested | 100% production-tested - Guarantees avalanche energy handling (EAS = 998.5mJ) without derating. |
| Wettable Flank | Yes - Enables automated optical inspection (AOI) of solder joint integrity on bottom-side terminals. |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad and wettable flank leads. Molded green compound, UL 94V-0 rated, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (S) | Source | Low-side return path; electrically tied to three internal source terminals for reduced parasitic inductance. |
| Pins 2, 3, 4, 5, 6, 7 (D) | Drain | High-current power input/output node; connected to large exposed copper pad for thermal and electrical conduction. |
| Pin 8 (G) | Gate | Control terminal with 1.1Ω gate resistance; optimized for 10V logic-level drive and EMI suppression. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C operation | Rated junction temperature enables placement near heat sources (e.g., exhaust manifolds, power converters) without thermal derating. |
| 100% UIS tested | Every unit validated for unclamped inductive switching - eliminates field failure risk in relay replacement and solenoid driving. |
| Low RDS(ON) @ 4.5V | 4.5mΩ at VGS = 4.5V supports 12V microcontroller gate drive without level-shifting, simplifying power stage design. |
| Wettable flank leads | Side-terminal plating allows AOI verification of solder fillet height and wetting angle - critical for automotive zero-defect manufacturing. |
| AEC-Q101 & PPAP | Qualified per AEC-Q101 Rev D, supported by full PPAP documentation, and manufactured in IATF16949-certified facilities. |
Applications
| Engine Management Systems | Body Control Modules |
|---|---|
|
Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems requiring precise 10ms pulse-width control at 12V battery supply. IC Role / Device Role / Timing Role: Low-side switch controlling ground return path for solenoid actuation; handles repetitive 15A peak current with <100ns turn-off fall time. Use Value: 3.2mΩ RDS(ON) limits power loss to <0.7W during 15A pulses, enabling compact PCB layout without forced air cooling. |
Use Scenario: Power distribution switch for adaptive LED headlight matrix, managing up to 8 individually controlled 10W channels. IC Role / Device Role / Timing Role: High-current load switch enabling/disabling LED strings via PWM dimming at 1kHz, with integrated body diode for freewheeling. Use Value: 74ns body diode reverse recovery time minimizes cross-conduction losses during PWM transitions, improving efficiency by >2.3% vs. standard MOSFETs. |
| 48V DC-DC Converters | Electric Power Steering (EPS) |
|
Use Scenario: Synchronous rectifier in 48V-to-12V buck converter for vehicle infotainment and ADAS domain controllers. IC Role / Device Role / Timing Role: Secondary-side power switch operating at 300kHz with 30A RMS current; leverages low Crss to suppress voltage spikes during dead-time. Use Value: 44pF Crss and 116nC total gate charge enable clean 51ns rise time and 93ns fall time, reducing switching losses by 18% versus comparable 100V MOSFETs. |
Use Scenario: Inverter half-bridge leg in 3-phase EPS motor drive, delivering 60A peak phase current at 10kHz PWM frequency. IC Role / Device Role / Timing Role: High-current switching element in H-bridge topology; withstands 612A pulsed drain current during torque surge events. Use Value: 612A IDM rating and 998.5mJ EAS ensure reliable operation during motor stall conditions without avalanche-induced degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | Higher RDS(ON) (3.8mΩ @ 10V), lower ID (140A), no wettable flank, same PowerFLAT 5x6 package. | Lacks AOI-compatible terminals; requires X-ray inspection for solder joint validation in safety-critical lines. | Select when cost sensitivity outweighs AOI requirement and thermal margin permits higher conduction loss. |
| IPB180N10N3 G | Lower RDS(ON) (1.8mΩ @ 10V), higher ID (180A), TO-263-7 package, no AEC-Q101 qualification. | Requires requalification for automotive use; larger footprint increases PCB area and thermal interface complexity. | Select only for non-automotive industrial DC-DC where ultra-low RDS(ON) justifies package change and qualification overhead. |
Compared with STL220N10F7 and IPB180N10N3 G, DMTH10H2M2LPSWQ-13 uniquely combines AEC-Q101 certification, wettable flank leads for zero-defect assembly, and 3.2mΩ RDS(ON) in a thermally efficient 5x6mm footprint - making it optimal for space-constrained, safety-compliant automotive power stages.
Availability
DMTH10H2M2LPSWQ-13 is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and 48V DC-DC converters requiring stable component supply across extended automotive product lifecycles.
Supply support for DMTH10H2M2LPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
This MOSFET belongs to Diodes' Automotive Power Solutions line, engineered specifically for AEC-Q101 compliance, high-temperature operation, and robustness in safety-critical vehicle subsystems.
FAQ
What is the maximum allowable gate-source voltage for DMTH10H2M2LPSWQ-13?
The absolute maximum VGS rating is ±20V. Operation beyond this range risks permanent gate oxide damage. For reliable 12V MCU drive, a 15V gate clamp is recommended; the device's 1.3–2.5V VGS(TH) ensures strong turn-on even with 4.5V logic-level signals.
Does DMTH10H2M2LPSWQ-13 require external gate resistors in automotive applications?
Yes - a 3Ω series gate resistor is specified in the datasheet for switching characterization (tR, tF). This value balances EMI suppression and switching speed; values below 2Ω increase dv/dt stress and risk parasitic turn-on, especially in high-noise engine bay environments.
How is thermal performance affected when mounted on 1oz versus 2oz copper PCB layers?
RθJA degrades from 38°C/W (2oz) to ~52°C/W (1oz) due to reduced lateral heat spreading. For 153A operation, this raises junction temperature by ~21°C - potentially exceeding the +175°C limit. Use of 2oz copper with thermal vias to inner ground planes is mandatory for full-rated current.
Can DMTH10H2M2LPSWQ-13 replace older MOSFETs like IRF3205 in automotive upgrades?
No - IRF3205 is a 55V, TO-220 device with 8mΩ RDS(ON) and no AEC-Q101 qualification. DMTH10H2M2LPSWQ-13 operates at 100V, delivers <40% conduction loss, fits in 1/4 the board area, and meets automotive reliability standards - but requires redesign of gate drive, thermal layout, and PCB footprint.
DMTH10H2M2LPSWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 153A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 116 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6239 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4W (Ta), 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI5060-8 (Type UX)
DMTH10H2M2LPSWQ-13 FAQ
1.How can I place an order for DMTH10H2M2LPSWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH10H2M2LPSWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH10H2M2LPSWQ-13 reliable?
The price and inventory of DMTH10H2M2LPSWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H2M2LPSWQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH10H2M2LPSWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H2M2LPSWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH10H2M2LPSWQ-13?
DMTH10H2M2LPSWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH10H2M2LPSWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH10H2M2LPSWQ-13?
For technical support, including DMTH10H2M2LPSWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H2M2LPSWQ-13 requirements.
6.How does Aetrix verify that DMTH10H2M2LPSWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH10H2M2LPSWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H2M2LPSWQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH10H2M2LPSWQ-13?
All DMTH10H2M2LPSWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H2M2LPSWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH10H2M2LPSWQ-13 part is unused and in its original packaging.
Return procedure for DMTH10H2M2LPSWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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