Diodes Incorporated DMTH10H2M5STLW-13

Overview

DMTH10H2M5STLW from Diodes Incorporated is a 100V, 229A N-channel enhancement-mode MOSFET in POWERDI®1012-8 (TOLL) package, featuring 2.2mΩ R_DS(ON) @ V_GS = 10V, rated for continuous operation up to +175°C, and qualified for high-reliability power management and load-switching applications including DC-DC converters and motor control.

For engineers reviewing the DMTH10H2M5STLW datasheet, DMTH10H2M5STLW pinout, DMTH10H2M5STLW application, or DMTH10H2M5STLW equivalent, key selection criteria include its ultra-low on-resistance, robust 100% UIS-tested ruggedness, wettable flank for automated optical inspection, thermal performance at TC = +25°C (R_θJC = 0.65°C/W), and automotive-grade variant availability (DMTH10H2M5STLWQ).

Technical Context

This MOSFET employs a trench-gate silicon process optimized for simultaneous low conduction loss and fast switching, with gate charge parameters (Q_g = 124.4nC, Q_gd = 28.3nC) enabling efficient hard-switched topologies. Its 100V BVDSS rating supports 48V and 60V bus architectures while maintaining avalanche energy rating (E_AS = 701mJ) for transient resilience.

The device integrates a co-packaged body diode with V_SD = 0.8–1.2V @ I_S = 30A and t_RR = 87.6ns, supporting synchronous rectification and bidirectional current handling in high-frequency power stages. Thermal design is anchored to the exposed drain pad, delivering 230.8W total power dissipation at T_C = +25°C.

Key Specifications

Pinout & Package

Package: POWERDI®1012-8 (TOLL), thermally enhanced 8-pin surface-mount package with exposed drain pad (pins 1–4 and 5–8 are source terminals; pin 6 is gate; pins 9–12 are drain terminals - see bottom-view marking diagram). Wettable flank side walls support AOI verification of solder joint integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IXTN200N10L2 and STL220N10F7, DMTH10H2M5STLW uniquely combines wettable flank inspection capability, +175°C rating, and industry-leading R_DS(ON)/Q_g balance-making it optimal for space-constrained, high-reliability industrial and automotive power modules.

Availability

DMTH10H2M5STLW is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and power management applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp.

Supply support for DMTH10H2M5STLW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power solutions, signal integrity products, and timing devices for industrial, computing, and automotive markets.

This MOSFET belongs to Diodes' POWERDI® TOLL portfolio, engineered specifically for high-current, high-efficiency power conversion systems where thermal density, reliability, and manufacturability are critical design constraints.

FAQ

What is the maximum continuous drain current at T_C = +100°C?

The DMTH10H2M5STLW supports 162A continuous drain current at case temperature +100°C, per datasheet maximum ratings table. This derating reflects thermal limits of the POWERDI1012-8 package's junction-to-case path (R_θJC = 0.65°C/W) and must be validated against actual PCB copper area and airflow in the target layout.

Does this MOSFET require a negative gate voltage for safe turn-off?

No. The device has a gate threshold voltage (V_GS(TH)) of 2–4V and is fully enhanced at V_GS = 10V. Turn-off is achieved by pulling gate to 0V; applying negative voltage is unnecessary and not specified in the absolute maximum ratings (V_GSS = ±20V).

Is the body diode suitable for synchronous rectification?

Yes. The integrated body diode exhibits V_SD = 0.8–1.2V at 30A and t_RR = 87.6ns, enabling use in synchronous buck topologies up to ~300kHz. However, for highest efficiency above 200kHz, an external Schottky or GaN FET may further reduce conduction and recovery losses.

How does the wettable flank feature impact assembly yield?

The wettable flank geometry provides vertical sidewall solder meniscus visibility during automated optical inspection (AOI), enabling detection of insufficient solder, bridging, or tombstoning with >99.5% accuracy-critical for zero-defect manufacturing in high-reliability power modules and automotive ECUs.