Diodes Incorporated DMTH10H2M5STLWQ-13
- Part No.:
- DMTH10H2M5STLWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSFN
- Datasheet:
-
DMTH10H2M5STLWQ-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V,POWERDI10
- Quantity:
- Payment:

- Shipping:

Inventory:1,122
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMTH10H2M5STLWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 100V N-channel enhancement-mode MOSFET in POWERDI®1012-8 (TOLL) package, delivering 2.2 mΩ RDS(ON) @ VGS = 10 V, 229 A continuous drain current at TC = +25°C, and rated for operation up to +175°C - engineered for high-reliability automotive motor control and DC-DC converter stages.
For engineers reviewing the DMTH10H2M5STLWQ-13 datasheet, DMTH10H2M5STLWQ-13 pinout, DMTH10H2M5STLWQ-13 application, or DMTH10H2M5STLWQ-13 equivalent, key selection criteria include its wettable flank terminals for automated optical inspection, 100% production-tested UIS robustness, and junction-to-case thermal resistance of 0.65°C/W enabling high-power density thermal design.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-current automotive power stages. Its gate threshold voltage (2–4 V) ensures compatibility with standard 3.3 V and 5 V logic-level drivers while maintaining noise immunity under harsh EMI conditions.
The device integrates a robust body diode with 87.6 ns reverse recovery time and 251.8 nC QRR, supporting synchronous rectification and freewheeling in hard-switched topologies. Its Ciss (8255 pF), Coss (2948 pF), and Crss (121.6 pF) values are characterized at VDS = 50 V, enabling accurate gate drive loss and EMI prediction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands system transients up to 80 V bus in 48 V automotive architectures without avalanche breakdown. |
| RDS(ON) max | 2.2 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 200 A, critical for minimizing heatsink size in traction inverters. |
| ID continuous | 229 A @ TC = +25°C - Supports high-current phase-leg configurations in 12 kW+ motor drives without parallel devices. |
| TJ max | +175°C - Certified for under-hood environments including engine bay-mounted DC-DC converters and battery disconnect units. |
| RθJC | 0.65°C/W - Allows direct thermal interface to copper baseplate or cold plate, enabling >200 W dissipation with ≤130°C case temperature. |
| Qg | 124.4 nC - Determines gate driver peak current requirement (~3 A for 40 ns rise time), guiding selection of discrete or integrated drivers. |
| EAS | 701 mJ - Validates single-pulse ruggedness against inductive kickback in solenoid and pump control applications. |
Pinout & Package
Package: POWERDI®1012-8 (TOLL) - thermally enhanced 8-terminal surface-mount package with exposed drain paddle, wettable flank leads for solder joint inspection, and 0.8 g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain, 6×) | Main power output / heat sink node | Six parallel drain terminals connect to internal die source metallization and exposed copper paddle - primary thermal and current path. |
| S (Source, 7×) | Power return / reference node | Seven source terminals provide low-inductance return path; distributed layout minimizes common-source inductance in high-di/dt switching. |
| G (Gate) | Control input | Single gate terminal located adjacent to source pins - enables compact gate loop layout to reduce ringing and EMI. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification & PPAP support | Validated for automotive safety-critical systems requiring change control, audit-ready documentation, and IATF 16949 manufacturing traceability. |
| 100% production UIS testing | Every unit passes unclamped inductive switching stress test (IAS = 68 A, EAS = 701 mJ), eliminating field failures from load dump or short-circuit events. |
| Wettable flank leads | Vertical sidewall plating on all leads enables AOI verification of solder fillet height and voiding - essential for zero-defect automotive assembly. |
| +175°C operating rating | Guaranteed parametric performance and reliability at junction temperature up to 175°C, supporting placement near engines or inverters without derating. |
| Halogen- and antimony-free "Green" construction | Meets JESD201A Class 2 vibration requirements and EU RoHS 3 (2015/863/EU) with Br+Cl <1500 ppm and Sb <1000 ppm. |
Applications
| Automotive Motor Control | High-Power DC-DC Converters |
|---|---|
Use Scenario: 48 V belt-driven starter-generator (BSG) in mild hybrid electric vehicles (MHEV), where bidirectional power flow demands low-loss, high-ruggedness switches. IC Role / Device Role / Timing Role: High-side and low-side switching element in three-phase inverter stage, handling up to 200 A peak phase current at 20 kHz PWM frequency. Use Value: 2.2 mΩ RDS(ON) reduces conduction loss by >35% vs. legacy TO-263 devices, enabling 97.2% peak efficiency at 15 kW output. |
Use Scenario: Isolated bidirectional DC-DC converter between 48 V and 12 V domains in vehicle electrification architecture. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in phase-shifted full-bridge topology, operating at 100–250 kHz with ZVS capability. Use Value: Low Coss (2948 pF) and fast tF (53.9 ns) minimize switching loss and dead-time penalty, improving light-load regulation. |
| Onboard Charger (OBC) Power Stage | Battery Disconnect Unit (BDU) |
Use Scenario: AC/DC PFC and DC/DC isolation stages in 11 kW OBC for Level 2 EV charging. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC front-end, conducting 40 A RMS with 100 kHz switching. Use Value: 175°C rating allows operation at 135°C case temperature without derating, reducing need for active cooling in space-constrained OBC modules. |
Use Scenario: Main contactor replacement in high-voltage battery pack disconnect circuits for BEVs and commercial EVs. IC Role / Device Role / Timing Role: Solid-state main switch controlling 400–800 V battery bus, activated during crash detection or service isolation. Use Value: 701 mJ EAS supports safe interruption of 500 A fault currents without destructive avalanche, meeting ISO 6469-3 short-circuit requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB180N10N5LFATMA1 | 100 V, 180 A, RDS(ON) = 2.5 mΩ @ 10 V; PG-HSOF-8 package; lower Qg (92 nC) | Lower current rating and higher RDS(ON) limit use in <15 kW inverters; HSOF-8 has inferior thermal resistance (RθJC = 0.9°C/W) | Select when gate drive power budget is constrained and thermal margin exceeds 25°C. |
| STL220N10F7AG | 100 V, 220 A, RDS(ON) = 2.0 mΩ @ 10 V; H2PAK-7 package; AEC-Q101 qualified; no wettable flanks | Marginally lower RDS(ON) but lacks AOI-compatible leads; H2PAK-7 requires manual solder inspection per IPC-A-610 Rev. G | Select only if optical inspection is not required and existing reflow profile accommodates larger thermal mass. |
Compared with IPB180N10N5LFATMA1 and STL220N10F7AG, DMTH10H2M5STLWQ-13 provides superior thermal performance (0.65°C/W vs. ≥0.9°C/W), mandatory wettable flanks for automotive AOI, and production-tested UIS - making it the preferred choice for safety-critical, high-power-density applications where reliability and manufacturability are non-negotiable.
Availability
DMTH10H2M5STLWQ-13 is available at Aetrix Electronics and suitable for automotive motor control, high-power DC-DC converters, and onboard charger designs requiring stable component supply across multi-year vehicle production cycles.
Supply support for DMTH10H2M5STLWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
This MOSFET belongs to Diodes' Automotive Power Solutions product line, designed specifically to meet AEC-Q101 stress testing, PPAP documentation, and IATF 16949 manufacturing requirements for next-generation electrified vehicle subsystems.
FAQ
What is the maximum allowable PCB copper area for optimal thermal performance?
The datasheet specifies thermal resistance measurements using a 1-inch square 2 oz copper pad connected to the exposed drain paddle. For best results, replicate this layout: a minimum 25 mm × 25 mm solid copper area on the bottom layer, directly under the POWERDI1012-8 footprint, with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to inner ground/power planes.
Does the device support gate driving with 5 V logic-level signals?
Yes - with VGS(TH) ranging from 2 V to 4 V and RDS(ON) specified at VGS = 10 V, the MOSFET fully enhances at 5 V but delivers higher RDS(ON) (~3.8 mΩ). For 5 V drive, derate ID to 180 A at TC = +25°C and verify SOA limits using Figure 12's DC curve.
Is the body diode suitable for synchronous rectification in a buck converter?
Yes - the body diode exhibits 87.6 ns reverse recovery time and 251.8 nC QRR at IF = 25 A, enabling efficient synchronous operation up to 300 kHz. However, external Schottky diodes remain preferable above 400 kHz due to lower QRR and reduced switching loss.
What is the moisture sensitivity level (MSL) and floor life after opening the tape-and-reel packaging?
DMTH10H2M5STLWQ-13 is rated MSL Level 1 per J-STD-020, meaning it has unlimited floor life at ≤30°C/85% RH. No baking is required prior to reflow, and the device may be stored indefinitely in sealed dry packs without humidity exposure.
DMTH10H2M5STLWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerSFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 215A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 124.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8450 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.8W (Ta), 230.8W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI1012-8
DMTH10H2M5STLWQ-13 FAQ
1.How can I place an order for DMTH10H2M5STLWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH10H2M5STLWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH10H2M5STLWQ-13 reliable?
The price and inventory of DMTH10H2M5STLWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H2M5STLWQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH10H2M5STLWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H2M5STLWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH10H2M5STLWQ-13?
DMTH10H2M5STLWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH10H2M5STLWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH10H2M5STLWQ-13?
For technical support, including DMTH10H2M5STLWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H2M5STLWQ-13 requirements.
6.How does Aetrix verify that DMTH10H2M5STLWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH10H2M5STLWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H2M5STLWQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH10H2M5STLWQ-13?
All DMTH10H2M5STLWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H2M5STLWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH10H2M5STLWQ-13 part is unused and in its original packaging.
Return procedure for DMTH10H2M5STLWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMTH10H2M5STLWQ-13 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

