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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH10H4M5LPS-13

Name: DMTH10H4M5LPS-13
Brand: Diodes Incorporated
SKU: DMTH10H4M5LPS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH10H4M5LPS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMTH10H4M5LPS-13.pdf

Description:: MOSFET N-CH 100V PWRDI5060

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMTH10H4M5LPS from Diodes Incorporated is a 100V, 175°C-rated N-channel enhancement-mode MOSFET in POWERDI5060-8 package, with R_DS(ON) = 3.5 mΩ (typ) at V_GS = 10 V and I_D = 30 A, rated for 100 A continuous drain current at T_C = +25°C, and optimized for high-efficiency notebook battery power management and load switching.

For engineers reviewing the DMTH10H4M5LPS datasheet, DMTH10H4M5LPS pinout, DMTH10H4M5LPS application, or DMTH10H4M5LPS equivalent, this device is selected for low conduction loss, fast switching (t_R = 26 ns, t_F = 50 ns), robust UIS capability (E_AS = 240 mJ), and automotive-grade thermal reliability up to +175°C junction temperature.

Technical Context

This MOSFET employs trench-gate silicon process technology to achieve ultra-low R_DS(ON) while maintaining controlled gate charge (Q_G = 80 nC) and low output capacitance (C_OSS = 1302 pF). Its internal structure integrates an optimized body diode with t_RR = 63 ns and Q_RR = 133 nC for synchronous rectification and bidirectional current handling.

The device operates across –55°C to +175°C junction range, features ±20 V gate-source rating, and is characterized for stable threshold voltage (V_GS(TH) = 1.3–2.5 V) and minimal R_DS(ON) drift over temperature-enabling precise current control in thermally demanding DC-DC and motor drive stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100 V drain-source blocking voltage before avalanche onset.
R_DS(ON)	3.5 mΩ (typ) @ V_GS = 10 V, I_D = 30 A - Enables <1 W conduction loss at 50 A, critical for high-current load switches.
I_D (continuous, T_C = +25°C)	100 A - Package-limited steady-state current capacity with proper heatsinking on exposed drain pad.
E_AS	240 mJ - Confirmed unclamped inductive switching energy rating ensures robustness in motor and solenoid drive transients.
Q_G	80 nC - Total gate charge determines driver strength requirement and switching loss trade-off in PWM applications.
T_J max	+175°C - Extended junction temperature rating supports operation in sealed, high-ambient environments like automotive ECUs.
C_ISS	4843 pF - Input capacitance impacts gate drive loop stability and turn-on speed under fixed-V_GS conditions.

Pinout & Package

Package: POWERDI5060-8 - Thermally enhanced surface-mount package with exposed drain pad (8-terminal configuration), UL 94V-0 molded plastic housing, and matte tin annealed copper leadframe for solderability and thermal performance (R_θJC = 1.1°C/W).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain pads)	Drain (D)	Eight parallel drain connections tied to large exposed copper pad - primary thermal path and high-current return node.
Terminal G	Gate (G)	Single gate input terminal - controls channel conduction; requires ≤±20 V drive and 80 nC charge for full enhancement.
Terminal S	Source (S)	Source reference node - forms common return for load current and gate drive loop; low-inductance layout critical for EMI control.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees minimum 240 mJ avalanche energy per unit - eliminates screening failure risk in inductive load switching.
Low R_DS(ON) at 4.5 V gate drive	6.2 mΩ max @ V_GS = 4.5 V, I_D = 20 A - enables efficient operation with 5 V logic-level controllers without level-shifting.
Green, halogen/antimony-free construction	<900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets RoHS 3 and automotive "green" compliance requirements for end-of-life processing.
Fast switching with low Q_GD/Q_G ratio	Q_GD = 18 nC / Q_G = 80 nC = 0.225 - reduces Miller-induced shoot-through risk and improves hard-switching efficiency.
Moisture sensitivity Level 1	No bake required prior to reflow - simplifies SMT assembly and avoids moisture-related popcorning during PCB reflow.

Applications

Notebook Battery Protection Circuit

Automotive HVAC Blower Driver

Use Scenario: Bidirectional battery disconnect and short-circuit protection in ultrabook battery packs with dual-MOSFET back-to-back configuration.

IC Role / Device Role / Timing Role: High-side load switch with integrated body diode reverse conduction capability for charging path control.

Use Value: 3.5 mΩ R_DS(ON) limits voltage drop to <175 mV at 50 A discharge, preserving battery runtime and enabling compact thermal design.

Use Scenario: PWM-controlled 12 V blower motor in passenger cabin HVAC systems requiring >80 A peak current and 175°C ambient tolerance.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology, driven by automotive-grade gate driver IC.

Use Value: 240 mJ E_AS withstands inductive kickback from motor windings during rapid PWM turn-off without snubber circuitry.

Industrial 48 V DC-DC Buck Converter

Server VRM High-Side Switch

Use Scenario: Primary-side synchronous rectifier in isolated 48 V-to-12 V buck converter for telecom power supplies operating at 300 kHz.

IC Role / Device Role / Timing Role: High-frequency power switch with low C_OSS (1302 pF) and fast t_F (50 ns) to minimize switching losses.

Use Value: 4843 pF C_ISS and 25.5 pF C_RSS enable clean gate drive waveform integrity and reduced EMI generation at high dV/dt.

Use Scenario: High-side FET in multiphase CPU voltage regulator modules where thermal density exceeds 100 W/cm² near the die.

IC Role / Device Role / Timing Role: Power stage switch with exposed drain pad directly soldered to PCB thermal plane for direct heat extraction.

Use Value: R_θJC = 1.1°C/W allows 136 W power dissipation at T_C = +25°C - supports >200 A phase current in compact VRM footprints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N10N3 G	R_DS(ON) = 1.8 mΩ @ 10 V (lower), but larger TO-263-7 package and higher Q_G = 120 nC.	Better conduction loss, but slower switching and less suitable for space-constrained notebook designs.	Select when thermal headroom exists and lowest possible I²R loss dominates over switching frequency.
SUD50002-24	R_DS(ON) = 4.5 mΩ @ 10 V (slightly higher), SO-8 package, lower I_D = 60 A rating, no UIS rating specified.	Limited to lower-power DC-DC converters; lacks automotive-grade transient robustness and thermal margin.	Choose only for cost-sensitive, non-automotive, <60 A applications where footprint compatibility with SO-8 is mandatory.

Compared with IPB180N10N3 G and SUD50002-24, DMTH10H4M5LPS delivers optimal balance of ultra-low R_DS(ON), fast switching, industry-leading UIS ruggedness, and compact POWERDI5060-8 thermal packaging-making it uniquely suited for high-reliability, high-density power management in mobile and automotive systems.

Availability

DMTH10H4M5LPS is available at Aetrix Electronics and suitable for notebook battery protection circuits, automotive HVAC blower drivers, and industrial 48 V DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for DMTH10H4M5LPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' POWERDI® high-current logic-level portfolio, engineered specifically for high-efficiency, thermally constrained power switching in portable computing, automotive, and industrial power conversion systems.

FAQ

What is the maximum allowable gate-source voltage for DMTH10H4M5LPS?

The absolute maximum V_GS rating is ±20 V, as specified in the Maximum Ratings table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to +12 V to +15 V for enhancement and –5 V to –10 V for active turn-off, especially in high-dV/dt environments.

Does DMTH10H4M5LPS support 4.5 V logic-level gate drive?

Yes - R_DS(ON) is guaranteed at 4.7 mΩ (max) with V_GS = 4.5 V and I_D = 20 A, enabling direct interface with 5 V microcontrollers and gate drivers without level-shifting. The V_GS(TH) range (1.3–2.5 V) ensures strong enhancement well below 4.5 V.

Is DMTH10H4M5LPS qualified for automotive applications?

While not pre-qualified to AEC-Q101, the device is manufactured in IATF 16949-certified facilities and supports PPAP documentation upon request. Its 175°C T_J rating, 100% UIS testing, and green material composition align with automotive power system requirements - qualification path available via Diodes' automotive team.

How is thermal performance validated for the POWERDI5060-8 package?

Thermal resistance values are measured per JEDEC JESD51 standards: R_θJC = 1.1°C/W is derived from junction-to-case (exposed drain pad) measurement using cold plate mounting, and R_θJA = 54°C/W reflects FR-4 board conditions with 2 oz copper and 1-inch² thermal pad - both values are production-tested and documented in DS41336 Rev. 4.

DMTH10H4M5LPS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4843 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.7W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI5060-8

DMTH10H4M5LPS-13 FAQ

1.How can I place an order for DMTH10H4M5LPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H4M5LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H4M5LPS-13 reliable?

The price and inventory of DMTH10H4M5LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H4M5LPS-13 is usually 5 days.

3.What payment methods are accepted for DMTH10H4M5LPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H4M5LPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H4M5LPS-13?

DMTH10H4M5LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H4M5LPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H4M5LPS-13?

For technical support, including DMTH10H4M5LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H4M5LPS-13 requirements.

6.How does Aetrix verify that DMTH10H4M5LPS-13 is sourced from the original manufacturer or authorized distributors?

All DMTH10H4M5LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H4M5LPS-13 meets industry standards.

7.What is the process for return or replacement of DMTH10H4M5LPS-13?

All DMTH10H4M5LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H4M5LPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H4M5LPS-13 part is unused and in its original packaging.

Return procedure for DMTH10H4M5LPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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