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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH10H4M5LPSW

Name: DMTH10H4M5LPSW
Brand: Diodes Incorporated
SKU: DMTH10H4M5LPSW
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH10H4M5LPSW

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMTH10H4M5LPSW.pdf

Description:: MOSFET BVDSS: 61V~100V POWERDI50

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Product details

Overview

DMTH10H4M5LPSW from Diodes Incorporated is a 100V, 175°C-rated N-channel enhancement-mode MOSFET in PowerDI®5060-8 (SWP) package, delivering 4.9mΩ R_DS(ON) at V_GS = 10V and 107A continuous drain current at T_C = +25°C. It serves as a high-efficiency load switch in notebook battery management systems, featuring 100% production-tested UIS robustness and low input capacitance for fast switching.

For engineers reviewing the DMTH10H4M5LPSW datasheet, DMTH10H4M5LPSW pinout, DMTH10H4M5LPSW application, or DMTH10H4M5LPSW equivalent, key selection criteria include its 1.1°C/W R_θJC, 80nC total gate charge, 175°C maximum junction temperature, and validated performance in DC-DC converter high-side switching and motor control H-bridge legs.

Technical Context

This MOSFET employs trench-gate silicon process technology to achieve ultra-low on-resistance while maintaining controlled gate charge (Q_g = 80nC) and fast switching (t_r = 26ns, t_f = 50ns). Its optimized Cr_ss/C_iss ratio (25.5pF / 4843pF) supports stable operation under hard-switching conditions in synchronous buck converters.

The device integrates a robust body diode with 133nC reverse recovery charge (Q_RR) and 63ns t_RR, enabling reliable freewheeling in inductive loads. Thermal design is anchored by a low 1.1°C/W junction-to-case resistance and 175°C rated junction temperature, supporting high-power density board-level thermal management.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Withstands up to 100V drain-source blocking voltage, suitable for 48V industrial bus and 60V automotive subsystems.
R_DS(ON)	4.9mΩ @ V_GS = 10V - Enables ≤0.5W conduction loss at 10A, critical for thermally constrained notebook power rails.
I_D (T_C = 25°C)	107A - Supports high-current load switching without external heatsinking when mounted on exposed copper pads.
Q_g	80nC - Determines gate drive power requirement; enables efficient operation with standard 1A peak gate drivers.
R_θJC	1.1°C/W - Allows direct thermal coupling to PCB copper or heatsink, enabling >100W steady-state dissipation with minimal ΔT.
E_AS	240mJ - Confirmed avalanche energy rating ensures survivability during inductive turn-off transients in motor drives.
T_J max	+175°C - Rated for extended operation in under-hood automotive modules and sealed industrial enclosures.

Pinout & Package

Package: PowerDI®5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), matte tin–annealed copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain (common source connection point)	All eight pins are internally connected to the drain terminal and exposed copper pad - provides low-inductance, high-current path and primary thermal conduction path to PCB.
Source (S)	Source terminal (pins 1–4 bottom side)	Four dedicated source leads enable low-impedance return path and reduce source inductance in high-di/dt switching.
Gate (G)	Control gate (pin 5 top side)	Single gate input with 2.1Ω gate resistance - simplifies driver interface and damps ringing without external series resistor.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees minimum 40A/240mJ avalanche capability per unit - eliminates field failure risk in unclamped inductive loads.
Low R_DS(ON) × Q_g figure of merit	392 mΩ·nC - balances conduction and switching losses for optimal efficiency in 300kHz–1MHz DC-DC converters.
Thermally optimized PowerDI5060-8	1.1°C/W R_θJC - enables >100W power handling with only 110°C junction rise above case, reducing need for external heatsinks.
Lead-free, halogen-free "Green" construction	<900ppm Br, <900ppm Cl, <1000ppm Sb - meets RoHS 3 and automotive ELV directive requirements without compromising thermal or electrical performance.
Fast body diode recovery	t_RR = 63ns, Q_RR = 133nC - minimizes cross-conduction loss and EMI in synchronous rectification applications.

Applications

Battery Protection Circuit

High-Side Load Switch

Use Scenario: Reverse-polarity and overcurrent protection in 3-cell Li-ion laptop battery packs.

IC Role / Device Role / Timing Role: Main N-channel high-side switch controlling battery discharge path; activated/deactivated via system PMIC GPIO.

Use Value: 4.9mΩ R_DS(ON) limits voltage drop to <50mV at 10A, preserving battery runtime and enabling accurate coulomb counting.

Use Scenario: Controlled power-up sequencing for GPU VRMs and SSD power rails in ultrabooks.

IC Role / Device Role / Timing Role: High-current, low-loss power gate between main 12V rail and downstream DC-DC inputs.

Use Value: 107A rating and 175°C T_J allow sustained 50A operation with <1.5W loss, eliminating thermal derating in compact layouts.

Brushless DC Motor Driver

Synchronous Buck Converter

Use Scenario: Low-side switch in 24V BLDC fan controller for server cooling modules.

IC Role / Device Role / Timing Role: Fast-switching low-side FET in 3-phase inverter leg, driven by gate driver IC at 20kHz PWM.

Use Value: 26ns rise time and 50ns fall time minimize switching transition losses, improving efficiency by ≥1.2% at full load.

Use Scenario: High-efficiency 48V-to-12V intermediate bus converter in telecom power shelves.

IC Role / Device Role / Timing Role: Primary synchronous rectifier in secondary-side synchronous rectification stage.

Use Value: 133nC Q_RR and 63ns t_RR reduce body diode conduction loss and associated heating during dead-time intervals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMTH10H4M5LPS-13	Same die, identical R_DS(ON) and Q_g, but in standard PowerDI5060-8 (non-SWP) package with higher R_θJC (1.3°C/W vs. 1.1°C/W).	Limited to ≤90A continuous current due to reduced thermal performance; unsuitable for 107A-rated designs.	Select only if legacy board layout lacks SWP footprint or thermal margin exceeds 15°C.
IPB180N10N3 G	100V, 180A, 3.1mΩ, TO-263 package; higher current rating but larger footprint and 1.5°C/W R_θJC.	Requires heatsink for >60A operation; incompatible with ultra-thin notebook PCB thickness constraints.	Prefer for industrial motor drives where space is less constrained and peak current exceeds 120A.

Compared with DMTH10H4M5LPSW, the DMTH10H4M5LPS-13 trades 0.2°C/W thermal resistance for broader supply-chain availability, while the IPB180N10N3 G offers lower R_DS(ON) at the cost of 4× PCB area and higher gate drive demand - making DMTH10H4M5LPSW optimal for space- and thermally constrained high-frequency load switching.

Availability

DMTH10H4M5LPSW is available at Aetrix Electronics and suitable for notebook battery management, BLDC motor control, and 48V intermediate bus conversion requiring stable component supply across multi-year product lifecycles.

Supply support for DMTH10H4M5LPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerDI® SWP (Small Outline, Wide Pad) portfolio, engineered specifically for high-current, low-profile power switching in portable and space-constrained applications where thermal performance and board-level reliability are critical.

FAQ

What is the maximum continuous drain current at T_C = +100°C?

The DMTH10H4M5LPSW supports 76A continuous drain current when case temperature is maintained at +100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating based on its 1.1°C/W R_θJC and 175°C T_J(max), enabling reliable operation in sealed enclosures with moderate airflow.

Does this MOSFET require a gate resistor for stability?

No external gate resistor is required for basic stability due to its integrated 2.1Ω gate resistance and optimized Cr_ss/C_iss ratio. However, a 2–5Ω series resistor is recommended when driving from low-impedance sources (>1A peak) to suppress potential V_GS overshoot during fast edge transitions in high-noise environments.

Is the body diode suitable for synchronous rectification?

Yes - the body diode is characterized with t_RR = 63ns and Q_RR = 133nC at I_F = 22.5A, enabling use in synchronous buck secondaries up to 500kHz. Its soft recovery profile reduces EMI, but external Schottky diodes remain preferred for >1MHz operation or ultra-low forward-voltage requirements.

Can this part be used in automotive AEC-Q101 qualified designs?

The DMTH10H4M5LPSW is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMTH10H4M5LPSW-A) with PPAP documentation, IATF 16949 manufacturing, and extended qualification testing. For automotive applications, contact Diodes' automotive team to obtain the qualified version and change-control documentation.

DMTH10H4M5LPSW Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta), 107A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4843 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 4.7W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMTH10H4M5LPSW FAQ

1.How can I place an order for DMTH10H4M5LPSW through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H4M5LPSW on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H4M5LPSW reliable?

The price and inventory of DMTH10H4M5LPSW are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H4M5LPSW is usually 5 days.

3.What payment methods are accepted for DMTH10H4M5LPSW?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H4M5LPSW transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H4M5LPSW?

DMTH10H4M5LPSW orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H4M5LPSW order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H4M5LPSW?

For technical support, including DMTH10H4M5LPSW datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H4M5LPSW requirements.

6.How does Aetrix verify that DMTH10H4M5LPSW is sourced from the original manufacturer or authorized distributors?

All DMTH10H4M5LPSW products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H4M5LPSW meets industry standards.

7.What is the process for return or replacement of DMTH10H4M5LPSW?

All DMTH10H4M5LPSW units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H4M5LPSW, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H4M5LPSW part is unused and in its original packaging.

Return procedure for DMTH10H4M5LPSW:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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