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Diodes Incorporated DMTH10H4M5LPSW-13
- Part No.:
- DMTH10H4M5LPSW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH10H4M5LPSW-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V POWERDI50
- Quantity:
- Payment:
- Shipping:
Inventory:9,748
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Product details
Overview
DMTH10H4M5LPSW-13 from Diodes Incorporated is a 100V, 175°C-rated N-channel enhancement-mode MOSFET in PowerDI®5060-8 (SWP) package, delivering 4.9 mΩ RDS(ON) at VGS = 10 V and 107 A continuous drain current at TC = +25°C. It serves as a high-efficiency load switch or synchronous rectifier in notebook battery power management systems.
For engineers reviewing the DMTH10H4M5LPSW-13 datasheet, DMTH10H4M5LPSW-13 pinout, DMTH10H4M5LPSW-13 application, or DMTH10H4M5LPSW-13 equivalent, key selection criteria include its low RDS(ON) at 4.5 V gate drive, 100% production-tested UIS robustness, and thermal performance with RθJC = 1.1 °C/W for high-current DC-DC and motor control designs.
Technical Context
This MOSFET employs trench-gate silicon process technology to achieve ultra-low on-resistance while maintaining fast switching speed (tF = 50 ns, tD(OFF) = 76 ns) and low gate charge (Qg = 80 nC). Its internal body diode supports reverse recovery (tRR = 63 ns, QRR = 133 nC), enabling use in synchronous buck converters and active OR-ing circuits.
The device features a thermally enhanced exposed-drain PowerDI5060-8 (SWP) package with 1.1 °C/W junction-to-case thermal resistance and operates across –55°C to +175°C junction temperature range. Its gate threshold voltage (VGS(TH) = 1.3–2.5 V) ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source blocking voltage without breakdown, suitable for 48 V industrial bus and 12/19 V notebook input rails. |
| RDS(ON) @ VGS = 10 V | 4.9 mΩ - Enables <1 W conduction loss at 100 A, critical for high-current load switching and battery protection circuits. |
| RDS(ON) @ VGS = 4.5 V | 6.7 mΩ - Ensures usable on-resistance with 4.5 V gate drive, supporting direct interfacing with common microcontroller GPIOs. |
| ID (continuous, TC = +25°C) | 107 A - Supports high-current power path applications when mounted on copper heatsink or PCB thermal pad. |
| EAS | 240 mJ - Rated avalanche energy allows safe operation under inductive switching stress without external snubbers in motor drives. |
| RθJC | 1.1 °C/W - Enables precise thermal modeling of junction temperature rise under high-power pulse conditions. |
| Qg | 80 nC - Low total gate charge reduces driver power consumption and enables efficient high-frequency PWM control up to 1 MHz. |
Pinout & Package
Package: PowerDI®5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), matte tin annealed terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Drain (D) | All eight pins are internally connected to the drain terminal and the exposed bottom pad - forms primary current-carrying and thermal path to PCB copper. |
| Pin 1 (Top View Marking Side) | Source (S) | Leftmost pin adjacent to marking "1H4M5LSW" - designated source connection per top-view schematic and internal layout. |
| Pin 2 (Top View) | Gate (G) | Second pin from left - isolated gate input requiring controlled drive to avoid oscillation or overvoltage stress. |
| Pin 3 (Top View) | Source (S) | Third pin - paralleled with Pin 1 to reduce source inductance and improve switching stability in high-di/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| 100% production UIS tested | Guarantees minimum 240 mJ single-pulse avalanche energy, eliminating need for design margining against unclamped inductive transients. |
| Low RDS(ON) at 4.5 V | 6.7 mΩ enables full-load operation with 3.3 V or 4.5 V logic-level gate drivers - no level-shifter required in portable systems. |
| Thermally optimized package | 1.1 °C/W RθJC allows >100 A continuous current with minimal PCB copper area, reducing board space vs. SO-8 or DPAK alternatives. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive and industrial environmental compliance mandates. |
Applications
| High-Efficiency Notebook Battery Switch | 48 V Industrial DC-DC Converter |
|---|---|
|
Use Scenario: High-side load switch between main battery and system rail in ultrabook platforms with tight thermal constraints. IC Role / Device Role / Timing Role: N-channel MOSFET configured as active-high load switch, controlled by PMIC or microcontroller GPIO. Use Value: 4.9 mΩ RDS(ON) limits conduction loss to <0.5 W at 10 A, extending battery runtime and reducing local heating on thin PCBs. |
Use Scenario: Synchronous rectifier in isolated 48 V–12 V flyback or forward converter for industrial IoT gateway power supply. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode to improve efficiency and reduce thermal load. Use Value: 6.7 mΩ RDS(ON) at 4.5 V gate drive enables >95% conversion efficiency at full load, cutting rectifier losses by >60% vs. 40 V Schottky. |
| Brushed DC Motor Driver Half-Bridge | Hot-Swap Controller for Server Backplane |
|
Use Scenario: Low-side switch in H-bridge motor driver for 24 V brushed DC fan or actuator in network equipment. IC Role / Device Role / Timing Role: Low-side N-MOSFET switched at 20–100 kHz with gate driver IC; body diode handles freewheeling current. Use Value: 63 ns reverse recovery time and 133 nC QRR minimize switching loss and EMI during commutation, improving acoustic noise and reliability. |
Use Scenario: Inrush current limiter and fault protection switch in 12 V server backplane hot-swap module. IC Role / Device Role / Timing Role: High-current, low-RDS(ON) pass element controlled by dedicated hot-swap controller (e.g., LTC4215). Use Value: 107 A continuous rating and 428 A pulsed capability support >100 W hot-plug insertion with <10 ms soft-start ramp and zero thermal derating at 70°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH10H4M5LPS-13 | Same die, identical RDS(ON), but in non-SWP PowerDI5060-8 package with higher RθJC = 1.4 °C/W and no exposed drain pad. | Lacks thermal performance for >80 A continuous operation; unsuitable where PCB heatsinking is limited. | Select only if legacy board layout requires non-SWP footprint and thermal budget permits 25% lower current rating. |
| IPB100N10N3 G | 100 V, 100 A, 4.5 mΩ @ 10 V, TO-263-7 package; higher Qg = 105 nC and slower tF = 75 ns. | Requires larger PCB area and more gate drive power; less suitable for compact, high-frequency designs. | Prefer when existing TO-263 thermal infrastructure exists and gate drive strength exceeds 2 A peak. |
Compared with DMTH10H4M5LPSW-13, the DMTH10H4M5LPS-13 sacrifices thermal performance for footprint compatibility, while the IPB100N10N3 G trades switching speed and package size for slightly lower RDS(ON) - making the DMTH10H4M5LPSW-13 optimal for space-constrained, high-frequency, high-current load switching where thermal management via PCB copper is prioritized.
Availability
DMTH10H4M5LPSW-13 is available at Aetrix Electronics and suitable for notebook battery management, 48 V DC-DC converters, and brushed motor control requiring stable component supply and guaranteed long-term manufacturability.
Supply support for DMTH10H4M5LPSW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' PowerDI® SWP (Exposed Drain) product line, engineered specifically for high-current, thermally demanding applications such as portable computing power switches and industrial DC-DC stages where low RDS(ON) and superior thermal transfer are critical.
FAQ
What is the maximum continuous drain current for DMTH10H4M5LPSW-13 at 100°C case temperature?
The maximum continuous drain current is 76 A at TC = +100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and assumes proper PCB copper area and airflow per the datasheet's FR-4 test condition.
Does DMTH10H4M5LPSW-13 support logic-level gate drive?
Yes - it delivers 6.7 mΩ RDS(ON) at VGS = 4.5 V and has a gate threshold voltage range of 1.3–2.5 V, enabling reliable turn-on with standard 3.3 V or 5 V microcontroller outputs without external level shifting.
Is the PowerDI5060-8 (SWP) package lead-free and RoHS compliant?
Yes - the device uses matte tin-annealed terminals over copper leadframe and complies with EU RoHS directives 2011/65/EU and 2015/863/EU. It is also halogen- and antimony-free ("Green"), with bromine and chlorine content below 900 ppm each and antimony below 1000 ppm.
Can DMTH10H4M5LPSW-13 be used in automotive applications?
This part is not AEC-Q101 qualified. While it operates from –55°C to +175°C and meets industrial reliability standards, Diodes explicitly states that automotive-grade versions require PPAP capability and IATF 16949 manufacturing - contact Diodes directly for qualified alternatives like the DMT10H015LPSW series.
DMTH10H4M5LPSW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Ta), 107A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 80 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4843 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.7W (Ta), 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI5060-8 (Type UX)
DMTH10H4M5LPSW-13 FAQ
1.How can I place an order for DMTH10H4M5LPSW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH10H4M5LPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH10H4M5LPSW-13 reliable?
The price and inventory of DMTH10H4M5LPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H4M5LPSW-13 is usually 5 days.
3.What payment methods are accepted for DMTH10H4M5LPSW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H4M5LPSW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH10H4M5LPSW-13?
DMTH10H4M5LPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH10H4M5LPSW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH10H4M5LPSW-13?
For technical support, including DMTH10H4M5LPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H4M5LPSW-13 requirements.
6.How does Aetrix verify that DMTH10H4M5LPSW-13 is sourced from the original manufacturer or authorized distributors?
All DMTH10H4M5LPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H4M5LPSW-13 meets industry standards.
7.What is the process for return or replacement of DMTH10H4M5LPSW-13?
All DMTH10H4M5LPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H4M5LPSW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH10H4M5LPSW-13 part is unused and in its original packaging.
Return procedure for DMTH10H4M5LPSW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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