My Inquiry
My Account
Diodes Incorporated DMTH10H4M5LPSWQ-13
- Part No.:
- DMTH10H4M5LPSWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH10H4M5LPSWQ-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V POWERDI50
- Quantity:
- Payment:
- Shipping:
Inventory:2,170
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMTH10H4M5LPSWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 100V N-channel enhancement-mode MOSFET in PowerDI®5060-8/SWP (Type UX) package, featuring 4.9 mΩ RDS(ON) @ VGS = 10 V, 107 A continuous drain current at TC = +25°C, and 175°C maximum junction temperature - designed for high-reliability automotive motor control and DC-DC converter power stages.
For engineers reviewing the DMTH10H4M5LPSWQ-13 datasheet, DMTH10H4M5LPSWQ-13 pinout, DMTH10H4M5LPSWQ-13 application, or DMTH10H4M5LPSWQ-13 equivalent, this part supports PPAP-capable automotive designs requiring low conduction loss, robust UIS performance, and IATF 16949-manufactured traceability with green, halogen-free packaging.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) and fast switching in high-current, high-temperature automotive environments. Its 1.1 °C/W RθJC thermal resistance enables efficient heat transfer from junction to exposed drain pad, supporting high-power density layouts on thermally enhanced PCBs.
The device delivers 240 mJ single-pulse avalanche energy (EAS) and passes 100% production UIS testing - critical for inductive load switching in motor drives and power management systems where voltage transients exceed VDSS.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source blocking voltage without breakdown, suitable for 48 V automotive bus and 60 V transient clamping. |
| RDS(ON) | 4.9 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 60 A, reducing thermal stress in high-current power stages. |
| ID (TC = +25°C) | 107 A - Supports high-current motor phase legs and synchronous rectifier applications without external heatsinking. |
| TJ max | +175°C - Rated for under-hood operation in engine control units and transmission modules per AEC-Q101 stress requirements. |
| EAS | 240 mJ - Guarantees ruggedness against inductive kickback in brushed/BLDC motor drivers and solenoid controls. |
| Qg | 80 nC - Enables efficient gate drive with standard 1–2 A peak drivers while maintaining fast tr/tf (26 ns / 50 ns). |
| Ciss | 4843 pF - Low input capacitance reduces gate drive power and improves switching efficiency at 100–500 kHz frequencies. |
Pinout & Package
Package: PowerDI®5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), matte tin annealed terminals, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Drain (D) | All eight pins are internally connected to the drain terminal and exposed copper pad - provides low-inductance, high-current path and primary thermal conduction path to PCB. |
| Source (S) | Source (S) | Two dedicated source terminals (pins 1 & 2 labeled "S" in top view) - minimize source inductance for stable gate control and accurate current sensing. |
| Gate (G) | Gate (G) | Single gate terminal (pin 3 labeled "G") - optimized for low Rg (2.1 Ω) and minimal Crss (25.5 pF) to reduce Miller effect and improve switching stability. |
Key Features
| Feature | Design Value |
|---|---|
| 100% Production UIS Testing | Ensures every unit withstands 40 A avalanche current and 240 mJ energy - eliminates field failure risk in inductive switching circuits. |
| Low RDS(ON) @ 4.5 V | 6.7 mΩ enables full enhancement with 5 V logic-level gate drive - compatible with automotive microcontrollers and isolated gate drivers. |
| Thermal Robustness | RθJC = 1.1 °C/W allows >100 W power dissipation with minimal ΔT between junction and solder point - supports compact, fanless designs. |
| AEC-Q101 Qualification | Validated across HTOL, TC, HTRB, UHAST, and ESD tests - meets automotive reliability requirements for safety-critical power stages. |
| Green, Halogen-Free Construction | <900 ppm Br/Cl, <1000 ppm Sb - complies with EU RoHS 3 and automotive OEM environmental mandates without compromising thermal or electrical performance. |
Applications
| Electric Power Steering (EPS) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
|
Use Scenario: High-current H-bridge driver for brushless steering motor, operating continuously at 85°C ambient with 100 ms overload pulses. IC Role / Device Role / Timing Role: Main switching FET in low-side and high-side legs, handling bidirectional 90 A peak currents with <100 ns dead-time control. Use Value: 4.9 mΩ RDS(ON) limits conduction loss to ≤0.4 W per FET at 45 A, enabling 97.2% system efficiency and eliminating forced air cooling. |
Use Scenario: Synchronous rectifier in 3 kW bi-directional buck-boost converter linking 12 V starter battery and 48 V Li-ion traction auxiliary supply. IC Role / Device Role / Timing Role: Secondary-side power switch operating at 250 kHz with zero-voltage switching (ZVS) assist. Use Value: 80 nC Qg and 4843 pF Ciss enable clean turn-on with 1.5 A gate driver, reducing switching loss by 34% vs. legacy 6.5 mΩ devices. |
| Automotive HVAC Blower Motor Driver | On-Board Charger (OBC) Auxiliary Power Stage |
|
Use Scenario: PWM-controlled 3-phase inverter driving 500 W centrifugal blower in cabin climate system, subject to vibration and thermal cycling. IC Role / Device Role / Timing Role: Phase-leg switch rated for 107 A continuous at TC = +100°C, with integrated body diode conducting reverse recovery during commutation. Use Value: 63 ns tRR and 133 nC QRR minimize diode switching loss and EMI generation during 15 kHz PWM transitions. |
Use Scenario: Primary-side high-side switch in 1.5 kW AC-DC front-end stage of OBC, operating in discontinuous conduction mode (DCM) with 100 V bus transients. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rated power switch handling 100 V VDS spikes during line surges and load dump events. Use Value: 100 V BVDSS rating plus 240 mJ EAS ensures reliable operation during ISO 7637-2 Pulse 5a (load dump) without snubber circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7AG | 100 V, 2.2 mΩ @ 10 V, 220 A rated - lower RDS(ON) but larger PowerFLAT™ 5x6 package and higher Qg (125 nC). | Requires higher gate drive strength and larger PCB area; better suited for <100 kHz, ultra-low-loss applications. | Select when thermal budget permits larger footprint and gate drive capability exceeds 2 A peak. |
| IXTQ110N10P | 100 V, 5.2 mΩ @ 10 V, TO-263 package - higher RθJA (40 °C/W) and no AEC-Q101 qualification. | Limited to industrial-grade motor drives; lacks PPAP support and automotive traceability. | Choose only for non-automotive cost-sensitive designs where AEC-Q101 compliance is not required. |
Compared with STL220N10F7AG and IXTQ110N10P, the DMTH10H4M5LPSWQ-13 offers optimal balance of low RDS(ON), compact PowerDI5060-8 footprint, production-tested avalanche ruggedness, and full automotive qualification - making it the preferred choice for space-constrained, PPAP-driven automotive power modules.
Availability
DMTH10H4M5LPSWQ-13 is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid converters, and HVAC blower motor drivers requiring stable component supply, long-term automotive lifecycle support, and AEC-Q101-compliant traceability.
Supply support for DMTH10H4M5LPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101-compliant high-current switching in engine bay, chassis, and battery systems - emphasizing thermal resilience, avalanche robustness, and green manufacturing.
FAQ
What is the maximum continuous drain current at TC = +100°C?
The DMTH10H4M5LPSWQ-13 supports 76 A continuous drain current at case temperature +100°C, verified per datasheet Note 6. This rating assumes proper PCB copper area (≥1 inch² 2 oz copper thermal pad) and is derived from its 1.1 °C/W RθJC and 175°C TJ(max), enabling sustained operation in under-hood environments.
Does this MOSFET require a gate resistor for automotive PWM applications?
Yes - a 4.7 Ω gate resistor is specified in the datasheet for switching characterization (tD(ON), tr, etc.) and helps dampen ringing caused by layout inductance and Crss feedback. For 250 kHz DC-DC converters, a 2.2–10 Ω range balances switching speed and EMI; values below 2 Ω increase risk of gate oscillation in high-dV/dt conditions.
Is the PowerDI5060-8/SWP package lead-free and RoHS 3 compliant?
Yes - the DMTH10H4M5LPSWQ-13 uses matte tin annealed terminals over copper leadframe and conforms to EU Directive 2015/863/EU (RoHS 3), with bromine/chlorine <900 ppm each and antimony <1000 ppm. Full compliance documentation is available via Diodes' Quality Portal at diodes.com/quality/lead-free/.
Can this MOSFET replace older 100 V parts like the DMTH10H022LPS in existing designs?
No - although both are PowerDI5060-8 devices, the DMTH10H022LPS has 2.2 mΩ RDS(ON) and different gate charge (110 nC), requiring gate drive redesign and layout review. The DMTH10H4M5LPSWQ-13's 4.9 mΩ value and 80 nC Qg offer distinct trade-offs in conduction vs. switching loss - direct replacement is not recommended without thermal and dynamic simulation.
DMTH10H4M5LPSWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Ta), 107A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 80 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4843 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.7W (Ta), 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI5060-8 (Type UX)
DMTH10H4M5LPSWQ-13 FAQ
1.How can I place an order for DMTH10H4M5LPSWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH10H4M5LPSWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH10H4M5LPSWQ-13 reliable?
The price and inventory of DMTH10H4M5LPSWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H4M5LPSWQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH10H4M5LPSWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H4M5LPSWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH10H4M5LPSWQ-13?
DMTH10H4M5LPSWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH10H4M5LPSWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH10H4M5LPSWQ-13?
For technical support, including DMTH10H4M5LPSWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H4M5LPSWQ-13 requirements.
6.How does Aetrix verify that DMTH10H4M5LPSWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH10H4M5LPSWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H4M5LPSWQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH10H4M5LPSWQ-13?
All DMTH10H4M5LPSWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H4M5LPSWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH10H4M5LPSWQ-13 part is unused and in its original packaging.
Return procedure for DMTH10H4M5LPSWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMTH10H4M5LPSWQ-13 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
