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Diodes Incorporated DMTH10H4M6SPS-13
- Part No.:
- DMTH10H4M6SPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH10H4M6SPS-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V POWERDI50
- Quantity:
- Payment:
- Shipping:
Inventory:2,440
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Product details
Overview
DMTH10H4M6SPS from Diodes Incorporated is a 100V, N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for continuous drain current of 118.8A at TC = +25°C, with RDS(ON) = 4.6 mΩ @ VGS = 10V and maximum junction temperature of +175°C. It is engineered for high-efficiency load switching in notebook battery management systems.
For engineers reviewing the DMTH10H4M6SPS datasheet, DMTH10H4M6SPS pinout, DMTH10H4M6SPS application, or DMTH10H4M6SPS equivalent, key selection criteria include its low conduction loss, robust UIS rating (EAS = 252 mJ), fast switching (tF = 28.2 ns), thermal resistance RθJC = 1.1°C/W, and AEC-Q101 readiness for automotive-grade power stages.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for simultaneous low RDS(ON) and minimized gate charge (Qg = 66 nC), enabling high-frequency DC-DC conversion without excessive drive loss. Its internal structure integrates an optimized body diode with tRR = 63 ns and QRR = 136 nC for synchronous rectification.
The device features fully rated unclamped inductive switching (UIS) capability (IAS = 41 A, EAS = 252 mJ) and operates across –55°C to +175°C, supported by a thermally enhanced PowerDI5060-8 package with exposed drain pad for direct PCB heat sinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100V drain-source blocking voltage in off-state, suitable for 48V industrial and 60V automotive bus applications. |
| RDS(ON) | 4.6 mΩ @ VGS = 10V - Delivers <1.5W conduction loss at 118.8A, critical for minimizing thermal stress in high-current load switches. |
| ID (TC = +25°C) | 118.8 A - Continuous drain current rating referenced to case temperature, enabling use with external heatsinking in power management modules. |
| RθJC | 1.1 °C/W - Junction-to-case thermal resistance confirms efficient heat transfer from die to PCB copper pad, supporting >100W dissipation with proper layout. |
| Qg | 66 nC - Total gate charge determines driver strength requirement; enables 500 kHz+ switching in buck converters with standard gate drivers. |
| EAS | 252 mJ - Avalanche energy rating validates ruggedness under inductive turn-off transients without snubbers in motor control H-bridges. |
| tF | 28.2 ns - Fast fall time reduces switching losses during turn-off, improving efficiency in high-duty-cycle applications like battery protection FETs. |
Pinout & Package
Package: PowerDI5060-8 - Thermally enhanced surface-mount package with exposed drain pad (8-terminal configuration), UL 94V-0 molded compound, moisture sensitivity level 1, and matte tin–annealed copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (D) | Seven parallel drain terminals connected to internal die and exposed copper pad - provides low-inductance, high-current path and primary thermal conduction path to PCB. |
| 8 | Gate (G) | Single gate input terminal - requires ≤±20V drive; low input capacitance (Ciss = 4327 pF) eases high-speed driving with minimal overshoot. |
| - | Source (S) | Internally tied to pins 1–7 via substrate; source connection is through PCB trace routing - must be routed with low inductance for stable switching. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C maximum junction temperature | Enables operation in engine bay, industrial motor drives, and sealed battery packs where ambient exceeds 125°C without derating. |
| 100% production-tested UIS | Guarantees avalanche robustness per unit - eliminates field failures in inductive load switching without external clamping circuits. |
| Low RDS(ON) × Qg figure-of-merit | 2.03 Ω·nC - Balances conduction and switching loss for optimal efficiency in 300–1000 kHz DC-DC topologies. |
| Lead-free, halogen- and antimony-free | Complies with RoHS 3 (2015/863/EU) and automotive green standards - supports sustainability requirements in Tier 1 supply chains. |
| PowerDI5060-8 thermal design | Exposed drain pad delivers 1.1°C/W RθJC, allowing >136W power dissipation with minimal heatsink area on 2oz copper PCB. |
Applications
| Battery Protection Circuit | High-Current Load Switch |
|---|---|
|
Use Scenario: Bidirectional overcurrent and short-circuit protection in Li-ion battery packs for ultrabooks and 2-in-1 tablets. IC Role / Device Role / Timing Role: Primary high-side switch controlling main power path between battery and system rail; responds within <100 ns to fault signals from protection IC. Use Value: 4.6 mΩ RDS(ON) limits voltage drop to <550 mV at 120A, preserving battery runtime while enabling fast thermal shutdown via TJ monitoring. |
Use Scenario: Hot-swap and inrush control for 12V/48V server backplanes and industrial PLC I/O modules. IC Role / Device Role / Timing Role: Low-loss, high-reliability power FET placed between input connector and downstream DC-DC stage; handles repeated hot-plug events. Use Value: 252 mJ EAS withstands repeated inductive kickback from connector parasitics, eliminating need for TVS clamps and reducing BOM cost. |
| Automotive Body Control Module | Brushless DC Motor Driver |
|
Use Scenario: High-side power distribution for lighting, HVAC, and window lift actuators in BCMs requiring AEC-Q101 compliance. IC Role / Device Role / Timing Role: Load switch controlled by microcontroller GPIO; operates continuously at 85°C ambient with full 118.8A rating. Use Value: +175°C TJMAX ensures margin for transient thermal spikes during PWM dimming, avoiding derating in compact enclosures. |
Use Scenario: Low-side switching in 3-phase BLDC inverters for e-bike controllers and power tools operating up to 60V bus. IC Role / Device Role / Timing Role: Synchronous rectifier FET in half-bridge leg; commutated at 20–50 kHz with precise dead-time control. Use Value: 63 ns reverse recovery time and 136 nC QRR minimize shoot-through risk and body-diode conduction loss during freewheeling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB180N10N5LF | RDS(ON) = 1.8 mΩ @ 10V but larger TO-263-7 package; higher Qg = 120 nC; RθJC = 1.4°C/W. | Requires larger PCB area and stronger gate driver; better suited for lower-frequency, ultra-low-RDS(ON) applications. | Select when <2 mΩ conduction loss outweighs board space and switching speed constraints. |
| STL220N6F7 | RDS(ON) = 3.2 mΩ @ 10V in PowerFLAT 5x6; Qg = 52 nC; RθJC = 1.3°C/W; max TJ = +175°C. | Smaller footprint but lower current rating (100A); less avalanche ruggedness (EAS = 140 mJ). | Choose for space-constrained designs where 100A suffices and avalanche margin is secondary. |
Compared with IPB180N10N5LF and STL220N6F7, DMTH10H4M6SPS offers the best balance of ultra-low RDS(ON), fast switching, and industry-leading thermal performance in a compact 8-pin exposed-pad package - ideal for high-power density battery and motor control systems.
Availability
DMTH10H4M6SPS is available at Aetrix Electronics and suitable for notebook battery management, automotive body control modules, and high-current industrial load switching requiring stable component supply and long-term lifecycle support.
Supply support for DMTH10H4M6SPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' PowerFET™ portfolio, developed specifically for high-efficiency, high-reliability power switching in computing, automotive, and industrial applications demanding extended temperature range and production-validated ruggedness.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The DMTH10H4M6SPS supports 84 A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI5060-8 package under sustained high-temperature operation, and must be validated using measured PCB thermal resistance and ambient conditions.
Does this MOSFET require a gate resistor for stability in high-speed switching?
Yes - a gate resistor (typically 2.2–4.7 Ω) is recommended to dampen ringing caused by trace inductance and device output capacitance. The datasheet specifies switching times (e.g., tF = 28.2 ns) using Rg = 4.7 Ω, confirming that external gate resistance is integral to achieving rated performance and EMI control.
Is the body diode suitable for synchronous rectification?
Yes - the integrated body diode has tRR = 63 ns and QRR = 136 nC at IF = 22.5 A, making it viable for synchronous rectification in buck converters up to ~500 kHz. However, external Schottky diodes may still be preferred in ultra-high-efficiency designs due to lower forward voltage.
Can DMTH10H4M6SPS be used in automotive applications without additional qualification?
No - while the device is AEC-Q101 ready and manufactured in IATF 16949-certified facilities, formal PPAP submission and change control documentation must be obtained directly from Diodes Incorporated for automotive deployment. Standard commercial-grade reels do not carry AEC certification out-of-box.
DMTH10H4M6SPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 66 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4327 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.7W (Ta), 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMTH10H4M6SPS-13 FAQ
1.How can I place an order for DMTH10H4M6SPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH10H4M6SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH10H4M6SPS-13 reliable?
The price and inventory of DMTH10H4M6SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H4M6SPS-13 is usually 5 days.
3.What payment methods are accepted for DMTH10H4M6SPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H4M6SPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH10H4M6SPS-13?
DMTH10H4M6SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH10H4M6SPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH10H4M6SPS-13?
For technical support, including DMTH10H4M6SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H4M6SPS-13 requirements.
6.How does Aetrix verify that DMTH10H4M6SPS-13 is sourced from the original manufacturer or authorized distributors?
All DMTH10H4M6SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H4M6SPS-13 meets industry standards.
7.What is the process for return or replacement of DMTH10H4M6SPS-13?
All DMTH10H4M6SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H4M6SPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH10H4M6SPS-13 part is unused and in its original packaging.
Return procedure for DMTH10H4M6SPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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