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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH10H4M6SPSW-13

Name: DMTH10H4M6SPSW-13
Brand: Diodes Incorporated
SKU: DMTH10H4M6SPSW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH10H4M6SPSW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMTH10H4M6SPSW-13.pdf

Description:: MOSFET BVDSS: 61V~100V POWERDI50

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Product details

Overview

DMTH10H4M6SPSW from Diodes Incorporated is a 100V, N-channel enhancement-mode MOSFET in PowerDI® 5060-8/SWP package, rated for 115A continuous drain current at T_C = +25°C, with R_DS(ON) = 4.9 mΩ @ V_GS = 10V and 175°C maximum junction temperature. It delivers high-efficiency power switching in notebook battery management and load-switch applications.

For engineers reviewing the DMTH10H4M6SPSW datasheet, DMTH10H4M6SPSW pinout, DMTH10H4M6SPSW application, or DMTH10H4M6SPSW equivalent, this device is selected for high-current DC-DC converters, motor control stages, and thermally demanding industrial power rails where low conduction loss and robust UIS performance are critical.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for simultaneous low R_DS(ON) (3.1 mΩ typ. @ V_GS = 10V) and fast switching (t_D(ON) = 15.2 ns, t_F = 28.2 ns). Its 1.1°C/W R_θJC enables direct thermal coupling to PCB copper or heatsinks via the exposed drain pad.

The device features fully characterized avalanche capability (E_AS = 252 mJ, I_AS = 41 A), 100% production-tested UIS, and gate charge parameters (Q_g = 66 nC, Q_gd = 17 nC) supporting efficient gate driver sizing for hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Supports input rails up to 80 V DC with 20% margin for transients in industrial and computing power supplies.
R_DS(ON) max	4.9 mΩ @ V_GS = 10V - Enables ≤0.35 W conduction loss at 115 A, reducing thermal stress in high-current load switches.
I_D continuous	115 A @ T_C = +25°C - Sustains full-rated current when mounted on a low-thermal-resistance heatsink or copper plane.
Q_g	66 nC - Determines gate drive energy requirement; compatible with standard 1–2 A peak gate drivers in 100–500 kHz SMPS designs.
R_θJC	1.1 °C/W - Allows precise junction temperature estimation from case temperature measurement, critical for thermal derating.
E_AS	252 mJ - Withstands repetitive inductive turn-off stress without degradation in motor drive or solenoid control circuits.
T_J max	+175°C - Enables operation in under-hood automotive modules or sealed industrial enclosures without active cooling.

Pinout & Package

Package: PowerDI® 5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), lead-free and RoHS 3 compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain (common source connection)	All eight pins connect internally to the exposed drain pad - provides lowest-inductance, highest-current path and primary thermal conduction path to PCB.
Source (S)	Source terminal	Two dedicated source leads (pins 1 & 8 per schematic) reduce source inductance and improve switching stability in high-di/dt applications.
Gate (G)	Control gate	Single gate pin (pin 3) - optimized for low gate resistance (R_G = 2.1 Ω) to minimize ringing and simplify driver layout.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees minimum 41 A avalanche current and 252 mJ single-pulse energy handling across all units - eliminates field failure risk in inductive load switching.
Low R_DS(ON) × Q_g figure-of-merit	323 mΩ·nC - balances conduction and switching losses for optimal efficiency in 100–300 kHz DC-DC converters.
Exposed drain thermal pad	Enables <1.1°C/W junction-to-case thermal resistance - allows >100 W power dissipation with minimal PCB copper area.
Green, halogen/antimony-free construction	<900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets automotive and industrial environmental compliance mandates without performance trade-offs.

Applications

Notebook Battery Protection Circuit

Industrial DC-DC Converter Primary Switch

Use Scenario: High-side load switch controlling main battery discharge path in ultrabooks with dual-cell Li-ion packs.

IC Role / Device Role / Timing Role: N-channel high-side switch controlled by dedicated gate driver IC, operating in on/off mode with <10 µs response.

Use Value: 4.9 mΩ R_DS(ON) limits voltage drop to <570 mV at 115 A, preserving system runtime and enabling accurate battery gauging.

Use Scenario: 48 V to 12 V step-down converter in factory automation PLC power supply.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in secondary side, driven with 100 kHz PWM and zero-voltage switching assist.

Use Value: Low C_oss (1335 pF) and fast t_F (28.2 ns) reduce switching loss and EMI, improving efficiency to >95.2% at full load.

Brushless DC Motor Phase Leg

Automotive HVAC Blower Driver

Use Scenario: Half-bridge upper switch in 24 V BLDC motor controller for robotic arm joint actuation.

IC Role / Device Role / Timing Role: High-side N-MOSFET in three-phase inverter, commutated at 20 kHz with bootstrap gate drive.

Use Value: 175°C T_J rating supports sustained 115 A peak phase current during stall conditions without thermal shutdown.

Use Scenario: Load switch for 12 V blower motor in passenger cabin HVAC system.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relay, controlled via CAN-linked microcontroller PWM output.

Use Value: 100% UIS qualification ensures reliable operation during motor stall or cable short events, meeting ISO 7637-2 pulse 5a immunity requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP110N10T	R_DS(ON) = 9.5 mΩ @ 10 V, TO-220 package, R_θJC = 0.9°C/W but requires through-hole mounting and external heatsink.	Lacks integrated thermal pad; unsuitable for space-constrained PCB layouts requiring surface-mount assembly.	Select when mechanical robustness and legacy board compatibility outweigh density and thermal integration needs.
DMTH10H4M6SPSWQ	Automotive-grade variant (AEC-Q101 qualified), identical electrical specs, same PowerDI5060-8/SWP package.	Qualified for automotive under-hood use (−40°C to +150°C ambient); includes extended reliability testing and PPAP documentation.	Select for automotive OEM programs requiring full automotive qualification and traceability - no redesign needed.

Compared with IXTP110N10T, DMTH10H4M6SPSW offers 52% lower R_DS(ON) and SMT compatibility; versus DMTH10H4M6SPSWQ, it lacks AEC-Q101 certification but provides identical performance at lower cost for industrial applications.

Availability

DMTH10H4M6SPSW is available at Aetrix Electronics and suitable for notebook battery protection circuits, industrial DC-DC converters, and BLDC motor phase-leg switching requiring stable component supply and high-volume tape-and-reel delivery.

Supply support for DMTH10H4M6SPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerDI® high-current trench-MOSFET product line, engineered specifically for high-efficiency, high-density power conversion and load switching in computing, industrial, and automotive systems.

FAQ

What is the maximum safe operating junction temperature for DMTH10H4M6SPSW?

The absolute maximum junction temperature is +175°C, verified across production lots per JEDEC JESD22-A108. Operation at this limit requires strict thermal design: case temperature must be held ≤155°C using ≥100 mm² of 2 oz copper connected to the exposed drain pad, with ambient ≤85°C. Derating curves in Figure 6 confirm R_DS(ON) remains within spec up to T_J = 175°C.

Can DMTH10H4M6SPSW be used as a synchronous rectifier in a 48 V to 5 V buck converter?

Yes - its 4.9 mΩ R_DS(ON), low Q_gd/Q_g ratio (0.26), and 1335 pF C_oss enable efficient synchronous rectification at 300–500 kHz. Gate drive must supply ≥1.5 A peak to achieve full enhancement within 20 ns; body diode reverse recovery (t_RR = 63 ns, Q_RR = 136 nC) necessitates careful dead-time control to avoid shoot-through.

Does DMTH10H4M6SPSW require a gate resistor for ESD protection?

No external gate resistor is required for ESD protection - the device incorporates internal gate protection diodes rated to ±2 kV HBM per JEDEC JS-001. However, a 4.7 Ω series gate resistor is recommended in switching applications to dampen ringing caused by L_GS and stray capacitance, as validated in the datasheet's dynamic test condition (RG = 4.7 Ω).

Is the PowerDI5060-8/SWP package compatible with standard reflow profiles?

Yes - the package is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 60 s above 217°C). The matte tin finish on copper leadframe ensures solderability per MIL-STD-202 Method 208, and the UL 94V-0 molding compound withstands thermal cycling without delamination.

DMTH10H4M6SPSW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta), 115A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4327 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 4.7W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMTH10H4M6SPSW-13 FAQ

1.How can I place an order for DMTH10H4M6SPSW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H4M6SPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H4M6SPSW-13 reliable?

The price and inventory of DMTH10H4M6SPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H4M6SPSW-13 is usually 5 days.

3.What payment methods are accepted for DMTH10H4M6SPSW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H4M6SPSW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H4M6SPSW-13?

DMTH10H4M6SPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H4M6SPSW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H4M6SPSW-13?

For technical support, including DMTH10H4M6SPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H4M6SPSW-13 requirements.

6.How does Aetrix verify that DMTH10H4M6SPSW-13 is sourced from the original manufacturer or authorized distributors?

All DMTH10H4M6SPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H4M6SPSW-13 meets industry standards.

7.What is the process for return or replacement of DMTH10H4M6SPSW-13?

All DMTH10H4M6SPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H4M6SPSW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H4M6SPSW-13 part is unused and in its original packaging.

Return procedure for DMTH10H4M6SPSW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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