Diodes Incorporated DMTH10H4M6SPSWQ-13

Overview

DMTH10H4M6SPSWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 100V N-channel enhancement-mode MOSFET in PowerDI® 5060-8/SWP (Type UX) package, delivering 4.9 mΩ R_DS(ON) @ V_GS = 10 V, 115 A continuous drain current at T_C = +25°C, and operation up to +175°C junction temperature-designed for high-reliability automotive motor controls and DC-DC converters.

For engineers reviewing the DMTH10H4M6SPSWQ-13 datasheet, DMTH10H4M6SPSWQ-13 pinout, DMTH10H4M6SPSWQ-13 application, or DMTH10H4M6SPSWQ-13 equivalent, key selection criteria include its 1.1°C/W R_θJC, 100% production-tested UIS robustness, low 39 pF Crss, and PPAP-capable IATF16949 manufacturing traceability.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-temperature automotive power stages. Its gate threshold voltage (2–4 V) ensures stable turn-on under wide supply variation, while the 66 nC total gate charge enables efficient gate driver sizing for 100 kHz–500 kHz synchronous buck topologies.

The device integrates a robust body diode with 136 nC Q_RR and 63 ns t_RR, supporting hard-switched and quasi-resonant converter designs. Thermal design leverages the exposed drain pad for direct heatsinking, achieving 136 W power dissipation at T_C = +25°C with only 1.1°C/W junction-to-case resistance.

Key Specifications

Pinout & Package

Package: PowerDI® 5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad (8-terminal, dual-side cooling capable). Dimensions: 5.15 mm × 6.40 mm × 1.10 mm (L × W × H); moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Compared with STL220N10F7 and IXFH110N10P, DMTH10H4M6SPSWQ-13 uniquely combines AEC-Q101 qualification, PPAP readiness, SMT-compatible PowerDI5060-8 packaging, and 175°C operation-making it the only choice for new automotive platforms requiring zero-defect SMT production and extended temperature range compliance.

Availability

DMTH10H4M6SPSWQ-13 is available at Aetrix Electronics and suitable for electric power steering systems, 48 V DC-DC converters, and onboard chargers requiring stable component supply, full automotive traceability, and long-term lifecycle support.

Supply support for DMTH10H4M6SPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This device belongs to Diodes' AEC-Q101-qualified Power MOSFET product line, engineered specifically for demanding automotive power conversion and motor control applications where thermal resilience, avalanche robustness, and process consistency are non-negotiable.

FAQ

What is the maximum allowable gate-source voltage for DMTH10H4M6SPSWQ-13?

The absolute maximum gate-source voltage is ±20 V, with recommended operating range of 4.5 V to 10 V for reliable enhancement-mode switching. Exceeding ±20 V risks permanent gate oxide damage; gate drive circuits must include clamping or zener protection to prevent overshoot during fast switching transitions.

Can DMTH10H4M6SPSWQ-13 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(ON) (normalized resistance increases with junction temperature) enables inherent current sharing. Four dedicated source leads minimize source inductance imbalance, and matching V_GS(TH) (2–4 V) across units ensures uniform turn-on timing. Use Kelvin-source layout and matched gate resistors for optimal performance.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is required to control dV/dt and prevent oscillation, especially in high-di/dt motor drive applications. Typical values range from 2.2 Ω to 10 Ω depending on switching speed and EMI constraints. The device's internal 2.1 Ω gate resistance provides baseline damping but does not replace external series resistance for driver optimization.

Is the PowerDI5060-8/SWP package lead-free and RoHS compliant?

Yes-the package uses matte tin-annealed copper leadframe and halogen/antimony-free green molding compound, fully compliant with EU RoHS 2015/863/EU (RoHS 3), with bromine <900 ppm, chlorine <900 ppm (Br+Cl <1500 ppm), and antimony <1000 ppm. UL 94V-0 flammability rating is certified.