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Diodes Incorporated DMTH12H007SK3-13

Part No.:
DMTH12H007SK3-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixDMTH12H007SK3-13.pdf
Description:
MOSFET BVDSS: 101V~250V TO252 T&
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,519

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Product details

Overview

DMTH12H007SK3 from Diodes Incorporated is a 120V, 86A N-channel enhancement-mode MOSFET in TO252 (DPAK) package, featuring 7.5mΩ typical RDS(ON) at VGS = 10V, 100% production-tested UIS, and +175°C rated junction temperature-designed for high-efficiency DC-DC converters and backlighting power stages.

For engineers reviewing the DMTH12H007SK3 datasheet, DMTH12H007SK3 pinout, DMTH12H007SK3 application, or DMTH12H007SK3 equivalent, key selection criteria include its low 44nC total gate charge, 1.1°C/W junction-to-case thermal resistance, robust 360.4mJ avalanche energy rating, and RoHS-compliant green packaging with matte tin annealed terminals.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for fast switching and low conduction loss in synchronous buck and half-bridge topologies. Its 3142pF input capacitance and 29pF reverse transfer capacitance support high-frequency operation up to 1MHz with controlled EMI.

The device integrates a low-VF body diode (0.8–1.2V at 30A) with 55ns reverse recovery time and 105nC QRR, enabling efficient freewheeling in hard-switched converters without external Schottky supplementation.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 120V - Supports 48V input bus designs with 2.5× voltage margin against transients
RDS(ON) max 8.9mΩ @ VGS = 10V - Enables ≤2.7W conduction loss at 86A continuous drain current
Qg 44nC - Reduces gate drive power and enables use with low-current drivers (e.g., UCC2753x)
EAS 360.4mJ - Withstands repetitive inductive turn-off stress in motor drives and solenoid controls
RθJC 1.1°C/W - Allows direct thermal coupling to heatsink via exposed drain pad for high-power density layouts
TJ max +175°C - Permits operation in under-hood automotive or industrial enclosures without derating
ID (TC = 100°C) 61A - Maintains usable current capability at elevated PCB temperatures in sealed power supplies

Pinout & Package

TO252 (DPAK) surface-mount package with exposed drain pad for thermal and electrical connection. Molded plastic body meets UL 94V-0 flammability rating; moisture sensitivity level 3 per J-STD-020.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Source) Source terminal Low-side reference node; connects to ground or low-side switch node in half-bridge
Pin 2 (Gate) Control input Receives PWM signal; requires <1.9Ω gate resistor to damp 12.5ns turn-on delay and 24.4ns turn-off delay
Pin 3 (Drain) Power output Exposed copper pad on underside-must be soldered to large copper area for thermal management and current return path

Key Features

Feature Design Value
+175°C rated junction temperature Enables deployment in engine control units and industrial motor drives without thermal throttling
100% production UIS tested Guarantees minimum 15.5A avalanche current and 360.4mJ energy handling across all shipped units
Low 7.5mΩ typical RDS(ON) Reduces I²R losses by >30% vs. legacy 120V MOSFETs, improving efficiency in 12–48V DC-DC stages
45°C/W RθJA (with 1″² copper) Supports >3.3W continuous dissipation on standard FR-4 PCBs without external heatsink
Halogen- and antimony-free "Green" construction Meets IPC-1752A material declaration requirements for automotive Tier 1 supply chain compliance

Applications

Automotive Body Control Module Industrial DC-DC Converter

Use Scenario: High-side load switching for LED headlamp drivers and HVAC actuators in 12V/24V vehicle architectures.

IC Role / Device Role / Timing Role: Main power switch controlling up to 86A peak load current with fast 13.7ns rise time and 10.9ns fall time.

Use Value: Eliminates need for discrete freewheeling diode due to low 55ns tRR and 105nC QRR body diode performance.

Use Scenario: Primary-side synchronous rectifier in isolated 48V-to-12V telecom power supplies operating at 300kHz.

IC Role / Device Role / Timing Role: Low-loss main switch with 44nC Qg enabling efficient gate drive at high frequency.

Use Value: Achieves <0.5% conduction loss at full load due to 7.5mΩ RDS(ON) and 1.1°C/W RθJC.

LCD Backlight Inverter Server VRM High-Side Switch

Use Scenario: Boost-stage switch in CCFL and LED backlight inverters for commercial displays requiring stable 120V output.

IC Role / Device Role / Timing Role: Fast-switching power transistor handling 344A pulsed drain current during startup surges.

Use Value: Survives repeated 130V VSPIKE events with no degradation thanks to 100% UIS screening.

Use Scenario: High-side switch in multiphase 48V-to-0.8V server voltage regulator modules for AI accelerators.

IC Role / Device Role / Timing Role: Thermally robust switch dissipating ≤2.7W at 86A with junction temperature held below 150°C.

Use Value: Enables compact layout using only 1″² copper pour-no heatsink required per phase.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL130N10F7 100V VDSS, 1.3mΩ RDS(ON), TO263 package, 175°C rated Limited to 100V systems; lower RDS(ON) but higher cost and larger footprint Select when 100V rating suffices and ultra-low conduction loss justifies TO263 thermal mass
IXTP110N10T 100V VDSS, 9.5mΩ RDS(ON), TO220 package, 175°C rated Through-hole mounting; higher RθJA (60°C/W) limits power density in space-constrained designs Choose for prototyping or low-volume industrial controls where manual assembly and heatsink mounting are acceptable

Compared with STL130N10F7 and IXTP110N10T, DMTH12H007SK3 uniquely balances 120V rating, TO252 manufacturability, and 8.9mΩ RDS(ON)-making it optimal for automated SMT production of high-reliability 48V power systems where voltage margin and thermal performance are critical.

Availability

DMTH12H007SK3 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and LCD backlight inverters requiring stable component supply and long-term lifecycle assurance.

Supply support for DMTH12H007SK3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs for power management, signal integrity, and connectivity applications.

This MOSFET belongs to Diodes' DMTH high-voltage power portfolio, engineered for automotive-grade reliability and industrial power conversion efficiency in harsh thermal environments.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH12H007SK3 supports 61A continuous drain current at TC = +100°C, verified per datasheet Note 5. This rating assumes proper thermal design with the exposed drain pad soldered to ≥1 inch² of 2oz copper on FR-4 PCB, enabling reliable operation in thermally constrained enclosures without active cooling.

Does this MOSFET require a gate driver with specific current capability?

Yes-the 44nC total gate charge and 1.9Ω internal gate resistance necessitate a driver capable of sourcing/sinking ≥2A peak current to achieve the specified 12.5ns turn-on delay and 13.7ns rise time. Drivers such as the Texas Instruments UCC27531 or ON Semiconductor NCP3420 are validated for use with this device.

Is the body diode suitable for synchronous rectification?

No-the integrated body diode has 55ns reverse recovery time and 105nC QRR, making it unsuitable for synchronous rectification above ~100kHz. It is designed for freewheeling in hard-switched topologies only; external Schottky or GaN FETs are required for true synchronous operation.

How is thermal performance affected by PCB copper area?

Thermal resistance drops from 75°C/W (2oz copper, minimal pad) to 45°C/W (2oz copper, 1 inch² pad), directly increasing allowable power dissipation from 2W to 3.3W. The exposed drain pad must be fully soldered to the copper area-voids or insufficient stencil aperture reduce thermal transfer by up to 40%.

DMTH12H007SK3-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
120 V
Current - Continuous Drain (Id) @ 25°C:
86A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
8.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3142 pF @ 60 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252 (DPAK)

DMTH12H007SK3-13 FAQ

1.How can I place an order for DMTH12H007SK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH12H007SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH12H007SK3-13 reliable?

The price and inventory of DMTH12H007SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH12H007SK3-13 is usually 5 days.

3.What payment methods are accepted for DMTH12H007SK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH12H007SK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH12H007SK3-13?

DMTH12H007SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH12H007SK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH12H007SK3-13?

For technical support, including DMTH12H007SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH12H007SK3-13 requirements.

6.How does Aetrix verify that DMTH12H007SK3-13 is sourced from the original manufacturer or authorized distributors?

All DMTH12H007SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH12H007SK3-13 meets industry standards.

7.What is the process for return or replacement of DMTH12H007SK3-13?

All DMTH12H007SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH12H007SK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH12H007SK3-13 part is unused and in its original packaging.

Return procedure for DMTH12H007SK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH12H007SK3-13 Tags

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