My Inquiry
My Account
Diodes Incorporated DMTH12H007SPS-13
- Part No.:
- DMTH12H007SPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH12H007SPS-13.pdf
- Description:
- MOSFET BVDSS: 101V~250V POWERDI5
- Quantity:
- Payment:
- Shipping:
Inventory:6,633
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMTH12H007SPS from Diodes Incorporated is a 120V, 84A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, optimized for high-efficiency DC-DC converters and switching power supplies. It delivers 7.5 mΩ RDS(ON) at VGS = 10V, supports 175°C operation, and features 100% production-tested UIS robustness.
For engineers reviewing the DMTH12H007SPS datasheet, DMTH12H007SPS pinout, DMTH12H007SPS application, or DMTH12H007SPS equivalent, key selection criteria include its low on-resistance at 6V gate drive (12–16 mΩ), thermally efficient exposed-drain package, and validated avalanche energy rating of 360.4 mJ.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low RDS(ON) while maintaining fast switching performance: tD(ON) = 12.5 ns, tR = 13.7 ns, Qg = 44 nC at VDS = 60V. Its internal body diode exhibits VSD = 0.8–1.2 V at IS = 30A and tRR = 55 ns under defined di/dt conditions.
The device is rated for continuous operation up to +175°C junction temperature, with thermal resistance RθJC = 1.2 °C/W to the exposed drain pad. Its Safe Operating Area (SOA) is characterized for single-pulse and DC conditions, limited by RDS(ON) and TJ(max) = 175°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 120 V - Withstands up to 120V drain-source blocking voltage without breakdown. |
| RDS(ON) | 7.5 mΩ max @ VGS = 10V, ID = 30A - Enables low conduction loss in high-current power stages. |
| ID (TC = 25°C) | 84 A - Continuous drain current rating at case temperature 25°C, package-limited. |
| EAS | 360.4 mJ - Avalanche energy rating with L = 3 mH, ensuring reliability under inductive switching stress. |
| RθJC | 1.2 °C/W - Low junction-to-case thermal resistance enables direct heatsinking via exposed drain pad. |
| Qg | 44 nC - Total gate charge determines driver strength requirement and switching loss trade-off. |
| TJ Range | −55°C to +175°C - Extended temperature range supports automotive under-hood and industrial high-ambient designs. |
Pinout & Package
Package: PowerDI5060-8 - Thermally enhanced surface-mount package with exposed drain pad for low RθJC, <1.1 mm profile, and RoHS-compliant matte tin finish over copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Common return path for load current; tied to PCB ground plane for low-inductance layout. |
| 2 (D) | Drain | Main power output node; electrically and thermally connected to large exposed copper pad. |
| 3 (S) | Source | Redundant source connection for improved current sharing and reduced package inductance. |
| 4 (S) | Source | Additional source terminal supporting high-frequency, low-impedance return routing. |
| 5 (G) | Gate | Control input requiring 2–4 V threshold; driven by dedicated gate driver to manage Qg = 44 nC. |
| 6 (D) | Drain | Secondary drain connection reinforcing thermal and electrical path to exposed pad. |
| 7 (D) | Drain | Third drain terminal enhancing current capacity and thermal spreading across package. |
| 8 (D) | Drain | Fourth drain connection completing symmetric high-current drain structure. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS production test | Guarantees minimum 15.5 A avalanche current and 360.4 mJ energy handling per unit - eliminates field failure risk from unclamped inductive transients. |
| Thermally efficient PowerDI5060-8 | RθJC = 1.2 °C/W enables >100W power dissipation with minimal heatsink - reduces system size and cost vs. TO-263 alternatives. |
| Low RDS(ON) at 6V gate drive | 12–16 mΩ @ VGS = 6V allows use with standard logic-level or 6V gate drivers - avoids need for level-shifting or bootstrap circuits. |
| +175°C rated operation | Validated continuous operation up to 175°C junction temperature - supports engine control units, motor drives, and industrial SMPS in harsh environments. |
| Green, halogen-free construction | <900 ppm Br/Cl, <1000 ppm Sb - meets automotive and industrial environmental compliance mandates without sacrificing thermal or electrical performance. |
Applications
| Automotive DC-DC Converters | Industrial Motor Drives |
|---|---|
|
Use Scenario: 12V-to-48V bidirectional converter in 48V mild-hybrid vehicle architectures. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch operating at 200–500 kHz with forced-air cooling. Use Value: 7.5 mΩ RDS(ON) minimizes conduction loss at 60A peak, enabling >96% efficiency while sustaining 150°C under-hood ambient. |
Use Scenario: Inverter half-bridge stage in 3kW servo motor drive with active gate control. IC Role / Device Role / Timing Role: Low-side switching element handling 70A RMS current and repetitive 300V bus transients. Use Value: 100% UIS qualification ensures survival during motor phase reversal and regenerative braking events without external snubbers. |
| Server PSU Primary Switch | Telecom Rectifier Modules |
|
Use Scenario: High-density 3.3 kW AC-DC front-end using interleaved LLC topology. IC Role / Device Role / Timing Role: Main switching FET in resonant half-bridge, gated at 300–700 kHz with ZVS. Use Value: 44 nC Qg and 29 pF Crss enable clean turn-off with minimal Miller-induced shoot-through risk in high-frequency operation. |
Use Scenario: 48V input, 12V output isolated DC-DC module for base station power distribution. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward converter, operating at 350 kHz. Use Value: 0.8–1.2 V VSD and 55 ns tRR reduce body-diode conduction loss and reverse recovery noise in hard-switched topologies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP110N10T | RDS(ON) = 9.5 mΩ @ 10V, VDSS = 100V, TO-220 package, RθJC = 1.0 °C/W | Limited to 100V systems; higher thermal resistance requires larger heatsink; no 175°C rating | Select when 100V rating suffices and through-hole assembly is preferred; avoid for 120V bus or high-ambient designs. |
| STL130N10F7 | RDS(ON) = 7.2 mΩ @ 10V, VDSS = 100V, PowerFLAT 5x6 package, RθJC = 1.5 °C/W | Lower voltage rating; higher RθJC; no production UIS testing documented | Consider only for space-constrained 100V applications where avalanche robustness is secondary; verify SOA under real load conditions. |
Compared with IXTP110N10T and STL130N10F7, DMTH12H007SPS uniquely combines 120V rating, 175°C operation, and production-tested UIS - making it the only option qualified for automotive-grade 48V–120V DC-DC converters requiring zero-field-failure reliability.
Availability
DMTH12H007SPS is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for DMTH12H007SPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications where thermal resilience and transient robustness are critical.
FAQ
What is the maximum allowable gate-source voltage for DMTH12H007SPS?
The absolute maximum VGS rating is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable switching, gate drive should be clamped between −10 V (to ensure full turn-off) and +12 V (to minimize RDS(ON) without overstressing the gate).
Does DMTH12H007SPS require a gate resistor for EMI control?
Yes - a 2.7 Ω gate resistor is used in the datasheet's switching time characterization (tD(ON), tR). This value balances switching speed against ringing and EMI; values below 1.5 Ω increase dv/dt-induced noise, while above 10 Ω significantly raises switching losses.
Can DMTH12H007SPS be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(ON) (see Figure 7) enables inherent current sharing. Layout must ensure matched gate drive paths and symmetrical drain/source copper areas; derate total current by 15% to account for thermal coupling between devices.
Is the PowerDI5060-8 package compatible with standard reflow profiles?
Yes - the package is rated for Moisture Sensitivity Level 1 per J-STD-020 and supports standard lead-free reflow profiles (peak 260°C). The exposed drain pad must be soldered to ≥100 mm² of 2 oz copper with thermal vias to achieve specified RθJC.
DMTH12H007SPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 120 V
- Current - Continuous Drain (Id) @ 25°C:
- 84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3142 pF @ 60 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.5W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMTH12H007SPS-13 FAQ
1.How can I place an order for DMTH12H007SPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH12H007SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH12H007SPS-13 reliable?
The price and inventory of DMTH12H007SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH12H007SPS-13 is usually 5 days.
3.What payment methods are accepted for DMTH12H007SPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH12H007SPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH12H007SPS-13?
DMTH12H007SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH12H007SPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH12H007SPS-13?
For technical support, including DMTH12H007SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH12H007SPS-13 requirements.
6.How does Aetrix verify that DMTH12H007SPS-13 is sourced from the original manufacturer or authorized distributors?
All DMTH12H007SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH12H007SPS-13 meets industry standards.
7.What is the process for return or replacement of DMTH12H007SPS-13?
All DMTH12H007SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH12H007SPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH12H007SPS-13 part is unused and in its original packaging.
Return procedure for DMTH12H007SPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMTH12H007SPS-13 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
