Diodes Incorporated DMTH12H007SPSW-13

Overview

DMTH12H007SPSW from Diodes Incorporated is a 120V, 84A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for continuous operation at +175°C junction temperature, with R_DS(ON) = 7.5 mΩ (typ) at V_GS = 10 V and 30 A, optimized for high-efficiency DC-DC converters in automotive and industrial power supplies.

For engineers reviewing the DMTH12H007SPSW datasheet, DMTH12H007SPSW pinout, DMTH12H007SPSW application, or DMTH12H007SPSW equivalent, key selection criteria include its 1.2 °C/W R_θJC, 100% production-tested UIS robustness, low-profile 1.1 mm height, and thermally efficient exposed-drain PowerDI5060-8 (SWP) package for high-power density board layouts.

Technical Context

This MOSFET employs trench-gate silicon process technology to achieve ultra-low R_DS(ON) while maintaining fast switching performance: t_D(ON) = 12.5 ns, t_R = 13.7 ns, Q_g = 44 nC at V_DS = 60 V and I_D = 25 A. Its gate threshold voltage V_GS(TH) ranges 2–4 V, enabling reliable turn-on with standard 5 V or 10 V logic-level drivers.

The device integrates a co-packaged body diode with V_SD = 0.8–1.2 V at I_S = 30 A and t_RR = 55 ns, supporting synchronous rectification and hard-switched topologies. Thermal design is enabled by R_θJC = 1.2 °C/W and R_θJA = 43 °C/W on FR-4 with 2 oz copper and 1-inch² thermal pad.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad (8-terminal, dual-side cooling capable). Dimensions: 5.15 × 6.40 × 1.10 mm (L × W × H), 0.097 g weight, RoHS-compliant matte tin finish over copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with DMTH12H007SPSW, DMTH12H007LPSW-13 offers identical electrical performance with minor plating variation, while IXTP110N10T trades compactness and thermal interface simplicity for higher pulse current and discrete heatsink flexibility-making the PowerDI5060-8 version optimal for space- and thermal-constrained high-frequency power stages.

Availability

DMTH12H007SPSW is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and telecom power supplies requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-aligned manufacturing traceability.

Supply support for DMTH12H007SPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs, with design, manufacturing, and test facilities across Asia and the Americas.

This MOSFET belongs to Diodes' Power Solutions product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and communications infrastructure where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current at +100°C case temperature?

The DMTH12H007SPSW is rated for 60 A continuous drain current at T_C = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerDI5060-8 package and must be validated with actual board-level thermal design using the provided R_θJC = 1.2 °C/W and transient thermal resistance curves.

Does this MOSFET require a gate resistor for safe operation in hard-switched circuits?

Yes-a gate resistor is required to control dV/dt and di/dt during switching transitions. With Q_g = 44 nC and typical gate drive voltage of 10 V, a 2.7 Ω resistor (as used in the datasheet's timing test condition) yields ~10 ns rise/fall times. Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses.

Can the body diode be used for reverse polarity protection in 48 V systems?

No-the body diode is not rated for continuous reverse-battery protection. Its V_SD = 0.8–1.2 V at 30 A and limited surge capability (I_SM = 336 A, 10 µs) make it suitable only for synchronous rectification or freewheeling. For reverse polarity protection, a dedicated low-V_F Schottky or ideal diode controller is required.

Is the PowerDI5060-8 package compatible with standard reflow profiles for lead-free assembly?

Yes-the device is qualified for lead-free reflow per J-STD-020, with Moisture Sensitivity Level 1 (MSL-1), meaning unlimited floor life at ≤30°C/60% RH. The matte tin annealed finish ensures reliable solderability using standard SAC305 profiles with peak temperatures up to 260°C and 60–90 seconds above 217°C.