Diodes Incorporated DMTH12H007SPSWQ-13

Overview

DMTH12H007SPSWQ from Diodes Incorporated is a 120V, 84A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for continuous operation at +175°C junction temperature, with R_DS(ON) = 7.5 mΩ (typ) @ V_GS = 10V and 12 mΩ (typ) @ V_GS = 6V, designed for high-efficiency DC-DC converters in automotive power management systems.

For engineers reviewing the DMTH12H007SPSWQ datasheet, DMTH12H007SPSWQ pinout, DMTH12H007SPSWQ application, or DMTH12H007SPSWQ equivalent, this part supports AEC-Q101-compliant designs requiring robust UIS performance, low conduction loss at elevated ambient temperatures, and thermally efficient surface-mount packaging with exposed drain pad for enhanced thermal dissipation.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low R_DS(ON) while maintaining fast switching characteristics: t_D(ON) = 12.5 ns, t_R = 13.7 ns, Q_g = 44 nC (V_GS = 10V), and C_iss = 3142 pF at V_DS = 60V. Its body diode exhibits V_SD = 0.8 V (typ) @ I_S = 30A and t_RR = 55 ns under IF = 25A, di/dt = 100 A/μs conditions.

Thermal design is enabled by R_θJC = 1.2 °C/W (junction-to-case, via exposed drain pad) and R_θJA = 43 °C/W on FR-4 with 2 oz copper and 1-inch² thermal bias. It sustains 15.5 A avalanche current (I_AS) and 360.4 mJ single-pulse avalanche energy (E_AS) with L = 3 mH.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (SWP, Type UX), thermally enhanced surface-mount package with exposed drain pad (8-terminal configuration). Dimensions: 5.15 mm × 6.40 mm × 1.00 mm max height; 0.097 g weight; RoHS-compliant matte tin finish over copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 120V automotive MOSFET applications.

Compared with STL135N10F7 and IXTP110N10L2, DMTH12H007SPSWQ uniquely combines AEC-Q101 qualification, +175°C operation, production UIS testing, and thermally superior PowerDI5060-8 packaging-making it the only drop-in solution for production automotive power stages requiring zero-margin thermal reliability.

Availability

DMTH12H007SPSWQ is available at Aetrix Electronics and suitable for automotive DC-DC converters, on-board chargers, and electric power steering systems requiring stable component supply across multi-year vehicle production cycles.

Supply support for DMTH12H007SPSWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for automotive, industrial, and computing markets.

This device belongs to Diodes' Automotive-Grade Power MOSFET product line, engineered specifically for high-temperature, high-current switching in safety-critical vehicle subsystems with stringent AEC-Q101 and IATF 16949 compliance.

FAQ

Is DMTH12H007SPSWQ qualified for automotive under-hood applications?

Yes. It is AEC-Q101 qualified, manufactured in IATF 16949-certified facilities, and rated for continuous operation from –55°C to +175°C junction temperature. Its 100% production UIS testing and PPAP capability confirm suitability for engine bay and transmission control module deployments.

What is the recommended PCB layout for thermal performance?

Use a minimum 1-inch² copper pour connected directly to the exposed drain pad via ≥8 thermal vias (0.3 mm diameter, filled or capped), placed within 2 mm of the pad edge. Maintain 0.25 mm solder mask opening around the pad and apply 100% stencil aperture for optimal solder joint thickness and thermal transfer.

Does the body diode support synchronous rectification in LLC converters?

Yes. The body diode has t_RR = 55 ns and Q_RR = 105 nC at IF = 25A, di/dt = 100 A/μs, enabling reliable zero-voltage switching in secondary-side LLC rectifiers. Its low V_SD = 0.8 V (typ) at 30A further reduces conduction loss versus external Schottky alternatives.

Can DMTH12H007SPSWQ replace TO-252-packaged MOSFETs in existing designs?

Yes, with layout adaptation. Its PowerDI5060-8 footprint is smaller than TO-252 but requires re-routing of gate and source traces to match the 8-pin drain/source/gate pinout. Thermal performance improves significantly due to lower R_θJC (1.2 vs. ~3.5 °C/W), allowing higher current density without heatsink.