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Diodes Incorporated DMTH15H017LPSW-13
- Part No.:
- DMTH15H017LPSW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH15H017LPSW-13.pdf
- Description:
- MOSFET BVDSS: 101V~250V POWERDI5
- Quantity:
- Payment:
- Shipping:
Inventory:4,850
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Product details
Overview
DMTH15H017LPSW from Diodes Incorporated is a 150V N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, rated for continuous drain current of 50A at TC = +25°C, RDS(ON) = 17.5mΩ @ VGS = 10V, and operation up to +175°C junction temperature. It serves as a high-efficiency load switch or synchronous rectifier in notebook battery power management systems.
For engineers reviewing the DMTH15H017LPSW datasheet, DMTH15H017LPSW pinout, DMTH15H017LPSW application, or DMTH15H017LPSW equivalent, key selection criteria include its 150V VDSS, low 17.5mΩ on-resistance at 10V gate drive, 100% production-tested UIS robustness, thermally efficient PowerDI5060-8 package with exposed drain pad, and AEC-Q–qualified automotive-grade variant availability.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while preserving fast switching performance: tD(ON) = 10.5ns, tF = 17.7ns, and Qg = 50nC at VDD = 75V. Its gate threshold voltage (VGS(TH) = 1.3–2.6V) ensures reliable turn-on with standard logic-level drivers.
The device integrates a low-VSD body diode (0.8–1.2V @ IS = 20A), supports unclamped inductive switching up to IAS = 14.5A / EAS = 315.4mJ, and features Ciss = 3369pF and Crss = 6.7pF - enabling stable operation in high-frequency DC/DC converters and Class D audio output stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150V - Withstands 150V drain-source blocking voltage before avalanche conduction. |
| RDS(ON) | 17.5mΩ @ VGS = 10V, ID = 20A - Minimizes conduction loss in high-current load switching paths. |
| ID (TC = 25°C) | 50A - Sustains 50A continuous drain current when case temperature is maintained at 25°C. |
| TJ max | +175°C - Rated for extended operation in high-ambient environments such as automotive under-hood or industrial power modules. |
| Qg | 50nC - Total gate charge determines driver strength requirement and switching energy loss. |
| RθJC | 1.4°C/W - Junction-to-case thermal resistance enables direct heatsinking via exposed drain pad for high-power dissipation. |
| EAS | 315.4mJ - Avalanche energy rating validates ruggedness in inductive load switching without external snubbers. |
Pinout & Package
Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad (8-terminal, dual-side cooling capable). Dimensions: 5.15 × 6.40 × 1.00 mm (L × W × H), <1.1mm profile ideal for ultra-thin portable electronics.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (D) | Seven parallel drain terminals connected to internal die and exposed copper pad - primary current path and thermal conduction path to PCB. |
| 8 | Source (S) | Single source terminal - carries return current and defines reference for gate control; tied to ground plane in load-switch configuration. |
| G (internal) | Gate (G) | Control terminal located between source and drain pins - requires ≤±20V gate-source voltage; low 1.9Ω gate resistance aids fast switching. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated operation | Enables deployment in high-temperature zones (e.g., laptop battery packs near CPU/GPU heat sources) without derating. |
| 100% production UIS tested | Guarantees avalanche reliability across all units - eliminates field failures in inductive load disconnect events. |
| PowerDI5060-8 thermally optimized package | 1.4°C/W RθJC allows >100W pulsed dissipation; exposed drain pad reduces thermal impedance by ~50% vs. SO-8. |
| Low RDS(ON) at 4.5V gate drive | 25.5mΩ @ VGS = 4.5V supports logic-level MCU/GPIO control without gate driver ICs in space-constrained designs. |
| Halogen- and antimony-free "Green" construction | Meets JEDEC J-STD-020 Level 1 moisture sensitivity and RoHS 3 (2015/863/EU) compliance for global manufacturing. |
Applications
| Notebook Battery Protection Circuit | USB-C PD Load Switch |
|---|---|
|
Use Scenario: Isolates main battery from system during overvoltage, overcurrent, or thermal fault conditions. IC Role / Device Role / Timing Role: High-side load switch controlled by battery management IC (e.g., BQ series) with fast turn-off (<20ns fall time) to prevent fault propagation. Use Value: 17.5mΩ RDS(ON) limits voltage drop to <0.875V at 50A, minimizing power loss and thermal rise in compact battery packs. |
Use Scenario: Enables/disables 20V/5A USB-C Power Delivery paths in docking stations or portable monitors. IC Role / Device Role / Timing Role: Bidirectional load switch supporting both sink and source modes; body diode forward voltage (0.8–1.2V) minimizes reverse conduction loss. Use Value: 150V VDSS provides 2× margin over 20V PD specification, ensuring long-term reliability against transient surges. |
| Class D Audio Output Stage | Industrial 24V DC/DC Converter Sync Rectifier |
|
Use Scenario: Half-bridge high-side switch in portable speaker amplifiers operating at 300–500kHz switching frequency. IC Role / Device Role / Timing Role: Fast-switching power stage with tF = 17.7ns and Qgd = 9.4nC - reduces switching losses and improves THD+N performance. Use Value: Low Crss (6.7pF) suppresses Miller-induced shoot-through, enabling stable PWM control without complex gate drive compensation. |
Use Scenario: Secondary-side synchronous rectifier in isolated 24V input, 12V/30A output telecom power supply. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce conduction loss; driven by transformer-coupled gate signal synchronized to primary side. Use Value: 50A ID rating and 1.4°C/W RθJC allow full-load operation with minimal heatsink - improving power density by >35% vs. discrete diode solution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH15H017LPSWQ | Automotive-qualified variant per AEC-Q101; identical electrical specs but with extended qualification testing (HTOL, TC, UHAST). | Required for automotive infotainment power rails or ADAS camera modules where component-level automotive compliance is mandated. | Select when ISO/TS 16949 production environment or vehicle-grade reliability certification is required. |
| IPB180N15N3 G | 150V, 180A, TO-263-7 package; RDS(ON) = 1.8mΩ @ 10V - lower on-resistance but larger footprint and higher gate charge (125nC). | Better suited for high-current industrial SMPS (>100A) where board space permits TO-263 and driver capability supports higher Qg. | Choose only if system-level thermal design accommodates TO-263 and gate driver can deliver >2A peak current. |
Compared with DMTH15H017LPSWQ, the base part lacks AEC-Q101 documentation but shares identical silicon and package; versus IPB180N15N3G, it trades 3.5× lower RDS(ON) for 2.5× smaller footprint and 40% lower Qg, favoring space- and driver-limited portable applications.
Availability
DMTH15H017LPSW is available at Aetrix Electronics and suitable for notebook battery protection, USB-C PD load switching, and Class D audio amplifier designs requiring stable component supply, tight thermal constraints, and high-reliability power switching.
Supply support for DMTH15H017LPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' PowerDI® high-performance power switching portfolio, engineered specifically for high-efficiency, high-density power management in portable computing and consumer electronics.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The DMTH15H017LPSW supports 35A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI5060-8 package at elevated temperatures and must be validated against actual PCB layout and airflow conditions.
Does this MOSFET require a gate driver for 3.3V microcontroller control?
No - its gate threshold voltage (VGS(TH) = 1.3–2.6V) and RDS(ON) = 25.5mΩ @ VGS = 4.5V enable direct drive from 3.3V GPIOs in low-frequency switching (≤10kHz); however, for >100kHz operation, a dedicated gate driver is recommended to achieve full 10V gate drive and minimize switching losses.
How is the PowerDI5060-8 package thermally attached to the PCB?
The exposed drain pad (pins 1–7) must be soldered to a large, multi-layer copper pour with thermal vias to inner ground/power planes. Diodes recommends a minimum 10mm² pad area and ≥6 thermal vias (0.3mm diameter, 0.8mm pitch) to achieve the rated 1.4°C/W RθJC performance.
Is the body diode suitable for reverse current conduction in USB-C DRP applications?
Yes - the intrinsic body diode has VSD = 0.8–1.2V at 20A and tRR = 72ns, making it viable for bidirectional USB-C power path control. However, for optimal efficiency in reverse conduction, external synchronous rectification control is advised to avoid forward voltage penalty.
DMTH15H017LPSW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 17.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3369 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta), 107W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI5060-8 (Type UX)
DMTH15H017LPSW-13 FAQ
1.How can I place an order for DMTH15H017LPSW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH15H017LPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH15H017LPSW-13 reliable?
The price and inventory of DMTH15H017LPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH15H017LPSW-13 is usually 5 days.
3.What payment methods are accepted for DMTH15H017LPSW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH15H017LPSW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH15H017LPSW-13?
DMTH15H017LPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH15H017LPSW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH15H017LPSW-13?
For technical support, including DMTH15H017LPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH15H017LPSW-13 requirements.
6.How does Aetrix verify that DMTH15H017LPSW-13 is sourced from the original manufacturer or authorized distributors?
All DMTH15H017LPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH15H017LPSW-13 meets industry standards.
7.What is the process for return or replacement of DMTH15H017LPSW-13?
All DMTH15H017LPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH15H017LPSW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH15H017LPSW-13 part is unused and in its original packaging.
Return procedure for DMTH15H017LPSW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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