Diodes Incorporated DMTH15H017SPSW-13

Overview

DMTH15H017SPSW from Diodes Incorporated is a 150V, 61A N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for continuous operation at +175°C junction temperature, with R_DS(on) = 14 mΩ (typ) @ V_GS = 10 V and 100% production-tested UIS robustness. It serves as a high-current, thermally resilient power switch in motor control inverters and high-efficiency DC-DC converters.

For engineers reviewing the DMTH15H017SPSW datasheet, DMTH15H017SPSW pinout, DMTH15H017SPSW application, or DMTH15H017SPSW equivalent, key selection criteria include its 1.4°C/W R_θJC, low 34 nC total gate charge, 2344 pF input capacitance at 75 V, and validated performance across -55°C to +175°C ambient conditions.

Technical Context

This MOSFET employs planar trench-gate silicon technology optimized for low conduction loss while maintaining fast switching speed (t_D(on) = 13.2 ns, t_F = 16.1 ns) and low reverse recovery charge (Q_RR = 196 nC). Its internal structure integrates an intrinsic body diode with V_SD = 0.8–1.2 V @ I_S = 20 A and supports unclamped inductive switching up to 14.4 A avalanche current.

The device operates with V_GS(th) = 2–4 V and exhibits stable R_DS(on) over temperature-19 mΩ max @ 25°C and <28 mΩ @ 150°C under V_GS = 10 V-enabling reliable use in thermally constrained automotive and industrial power stages without derating penalties.

Key Specifications

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad; 1.0 mm nominal profile; UL 94V-0 molded plastic; matte tin annealed terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-temperature MOSFET applications.

Compared with IXTH15N15L2 and STP160N10F7, DMTH15H017SPSW uniquely balances 150 V rating, 61 A current, 19 mΩ R_DS(on), and 1.1 mm profile-making it optimal for space-constrained, high-ambient-temperature 48–60 V power stages where thermal density and reliability are co-primary requirements.

Availability

DMTH15H017SPSW is available at Aetrix Electronics and suitable for motor control inverters, high-efficiency DC-DC converters, and automotive body electronics requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMTH15H017SPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerMOS™ high-reliability portfolio, engineered specifically for demanding automotive, industrial, and computing power systems where thermal resilience, avalanche robustness, and RoHS-compliant packaging are mandatory.

FAQ

What is the maximum continuous drain current at T_C = 100°C?

The DMTH15H017SPSW supports 40 A continuous drain current when case temperature is maintained at 100°C, as specified in the Absolute Maximum Ratings table (Note 7). This value reflects thermal derating from the 61 A rating at T_C = 25°C, based on R_θJC = 1.4°C/W and safe junction temperature limits.

Does this MOSFET require a gate resistor for stability?

A gate resistor is recommended to dampen ringing and control switching speed; typical values range from 2.2 Ω to 10 Ω depending on driver capability and EMI requirements. The device's R_g = 1.8 Ω (typ) and Q_g = 34 nC make it compatible with standard gate drivers without external series resistance for basic operation-but intentional RC tuning improves system robustness.

Is the body diode suitable for synchronous rectification?

Yes-the intrinsic body diode has V_SD = 0.8–1.2 V at 20 A and t_RR = 69 ns, with Q_RR = 196 nC. While not optimized for ultra-fast recovery like dedicated Schottky diodes, it supports synchronous rectification in medium-frequency (≤300 kHz) buck converters where controlled reverse recovery is acceptable and gate timing can be adjusted to minimize shoot-through risk.

How does the PowerDI5060-8 package compare thermally to SO-8 or DPAK?

The PowerDI5060-8 delivers R_θJC = 1.4°C/W-significantly better than SO-8 (~60°C/W) and competitive with DPAK (~2.5°C/W)-due to its exposed drain pad and optimized copper lead-frame. Its 1.0 mm height also enables thinner assemblies than DPAK (2.3 mm), making it ideal for low-profile power modules where thermal performance and vertical space are both critical constraints.