Diodes Incorporated DMTH15H017SPSWQ-13

Overview

DMTH15H017SPSWQ from Diodes Incorporated is a 150V, 175°C-rated N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, delivering 19 mΩ R_DS(on) at V_GS = 10 V and 61 A continuous drain current at T_C = +25°C. It features 100% production-tested UIS, low Q_g (34 nC), and thermally optimized exposed-drain construction for motor control and DC-DC converter applications requiring high reliability under elevated ambient temperatures.

For engineers reviewing the DMTH15H017SPSWQ datasheet, DMTH15H017SPSWQ pinout, DMTH15H017SPSWQ application, or DMTH15H017SPSWQ equivalent, key selection criteria include its AEC-Q101 qualification, 1.4 °C/W R_θJC, 175°C maximum junction temperature, and PowerDI5060-8 thermal performance in space-constrained automotive and industrial power stages.

Technical Context

This MOSFET employs planar trench-gate technology to balance low on-resistance and fast switching: R_DS(on) remains stable across -55°C to +175°C, with gate threshold voltage (2–4 V) enabling robust 3.3 V/5 V logic-level drive compatibility. Its 2344 pF C_iss and 6.9 pF Cr_ss support high-frequency operation up to 500 kHz in synchronous buck converters.

The device integrates an intrinsic body diode with 61 A continuous forward current rating and 69 ns reverse-recovery time (t_RR), enabling efficient freewheeling in half-bridge topologies. Thermal design leverages the exposed drain pad for direct heatsinking, achieving 107 W power dissipation at T_C = +25°C with 1.4 °C/W junction-to-case resistance.

Key Specifications

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), matte tin annealed terminals, 0.097 g mass, 1.0 mm max profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Compared with STL15DN15L and IXTP120N15X4, DMTH15H017SPSWQ uniquely combines AEC-Q101 qualification, 175°C operation, SMT-compatible PowerDI5060-8 thermal performance, and production UIS testing-making it the only drop-in solution for production automotive power stages requiring zero field failures.

Availability

DMTH15H017SPSWQ is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and automotive lighting applications requiring stable component supply, long-term lifecycle assurance, and full AEC-Q101 compliance documentation.

Supply support for DMTH15H017SPSWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and timing solutions for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101-compliant high-voltage switching in engine control units, EPS, and ADAS subsystems where thermal resilience and transient robustness are non-negotiable.

FAQ

Is DMTH15H017SPSWQ suitable for 48 V automotive battery systems?

Yes. With 150 V V_DSS, it provides 3.1× overvoltage margin against ISO 7637-2 Pulse 5a (120 V load dump), and its AEC-Q101 qualification, 175°C rating, and 100% UIS testing confirm suitability for 48 V battery-connected circuits in EPS, HVAC, and body control modules.

What is the recommended PCB layout for optimal thermal performance?

Use a minimum 25 mm² exposed copper area (2 oz Cu) connected directly to the drain pad via ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch). Maintain 0.5 mm solder mask opening around the pad and avoid routing traces underneath to maximize heat transfer to internal layers or heatsinks.

Does this MOSFET require a gate resistor for stability?

A 5–10 Ω series gate resistor is recommended to dampen ringing caused by low 1.8 Ω R_g and parasitic inductance in high-dI/dt switching. This value balances switching speed (t_F = 16.1 ns) and EMI suppression without compromising efficiency in 20–100 kHz applications.

Can DMTH15H017SPSWQ replace older TO-252 MOSFETs in existing designs?

Yes, with layout adaptation. Its PowerDI5060-8 footprint differs from TO-252 but offers superior thermal performance (1.4 °C/W vs. ~3.5 °C/W) and lower profile. Replacing requires updating land pattern and thermal vias, but delivers measurable improvements in power density and temperature rise at identical current levels.