Diodes Incorporated DMTH15H053SPSW-13

Overview

DMTH15H053SPSW from Diodes Incorporated is a 150V, 25A N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, featuring 46mΩ typical R_DS(ON) at V_GS = 10V, 100% UIS-tested reliability, and +175°C rated junction temperature-designed for high-efficiency DC-DC converters and automotive-grade power management.

For engineers reviewing the DMTH15H053SPSW datasheet, DMTH15H053SPSW pinout, DMTH15H053SPSW application, or DMTH15H053SPSW equivalent, key selection criteria include its low 11.5nC total gate charge, thermally efficient exposed-drain package, 1.4°C/W R_θJC, and AEC-Q-compliant robustness for high-ambient industrial and automotive power stages.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction and switching losses. Its 84pF C_oss and 3.7pF Crss support fast, low-noise switching in synchronous buck topologies, while the integrated body diode with 47ns t_RR and 87nC Q_RR enables reliable freewheeling in hard-switched converters.

The device operates across –55°C to +175°C junction range and is qualified per JEDEC standards for high-reliability applications. Its PowerDI5060-8/SWP package features an exposed drain pad for direct thermal coupling to PCB copper, delivering 107W P_D at T_C = +25°C and 1.4°C/W R_θJC.

Key Specifications

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 5.15 × 6.40 mm footprint, 1.00 mm nominal height, UL 94V-0 molded compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH15H053SPSWQ, the base part lacks AEC-Q101 documentation but shares identical die and package; versus IPB180N15N3G, it trades lower current capability for 60% smaller footprint and 64% lower gate charge-favoring high-frequency, space-limited designs.

Availability

DMTH15H053SPSW is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and telecom power supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for DMTH15H053SPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.

This MOSFET belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and telecom infrastructure where thermal resilience and switching speed are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH15H053SPSW supports 18A continuous drain current at T_C = +100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat transfer efficiency at elevated case temperatures and assumes proper PCB copper area and airflow per the recommended pad layout.

Is this MOSFET suitable for synchronous rectification in a 150kHz LLC resonant converter?

Yes - with 11.5nC Q_g, 47ns t_RR, and 84pF C_oss, the DMTH15H053SPSW delivers low switching loss and minimal body-diode conduction in ZVS-operated LLC secondaries. Its 150V V_DSS provides sufficient margin over reflected 48V bus voltages, and the exposed drain pad ensures stable thermal performance under sustained 15A loads.

Does the PowerDI5060-8/SWP package require solder paste stencil adjustments versus standard SO-8?

Yes - the PowerDI5060-8/SWP uses a single large exposed drain pad (5.15 × 3.76 mm) instead of discrete leads. Recommended stencil aperture is 80% open area with 0.127mm thickness; solder paste volume must be increased by ~3× versus SO-8 to ensure void-free thermal pad wetting and mechanical adhesion per IPC-7095 guidelines.

How does the 100% UIS testing impact reliability in automotive load-dump scenarios?

Each unit undergoes production-level unclamped inductive switching stress at I_AS = 11.7A and E_AS = 68.4mJ, verifying robustness against transient overvoltage events like ISO 7637-2 Pulse 5a (load dump). This eliminates latent defects that cause early-life failure in under-hood environments, extending FIT rate beyond 100 ppm at 175°C operation.