Diodes Incorporated DMTH15H053SPSWQ-13

Overview

DMTH15H053SPSWQ from Diodes Incorporated is a 150V, 25A N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for +175°C operation and AEC-Q101 qualified for automotive use. It delivers 46mΩ typical R_DS(ON) at V_GS = 10V, 11.5nC total gate charge, and 100% production-tested UIS robustness-enabling high-efficiency DC-DC converters and automotive power management systems.

For engineers reviewing the DMTH15H053SPSWQ datasheet, DMTH15H053SPSWQ pinout, DMTH15H053SPSWQ application, or DMTH15H053SPSWQ equivalent, key selection criteria include its 150V BVDSS rating, thermally efficient exposed-drain package, low Q_g/R_DS(ON) trade-off, AEC-Q101 qualification, and suitability for high-temperature under-hood automotive switching.

Technical Context

This MOSFET employs planar trench-gate silicon technology optimized for low conduction loss and fast switching in hard-switched topologies. Its 1.4°C/W R_θJC enables direct thermal coupling to PCB copper or heatsinks, while the integrated body diode supports synchronous rectification and freewheeling in buck and half-bridge configurations.

The device features tightly controlled V_GS(TH) (2–4V) and stable R_DS(ON) over -55°C to +175°C, with normalized on-resistance variation ≤1.4× across full temperature range. Its 84pF C_oss and 3.7pF Crss support high-frequency operation up to 1MHz in isolated and non-isolated converters.

Key Specifications

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 5.15 × 6.40 mm footprint, 1.0 mm max height. Molded green compound (UL 94V-0), matte tin annealed terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-temperature MOSFET applications.

Compared with STL15DN15L and IXTP15N15X2, DMTH15H053SPSWQ offers 67% higher current rating, 17% lower R_DS(ON), and automotive-grade validation-making it optimal for high-power, high-reliability 48V+ switching where thermal density and qualification are critical.

Availability

DMTH15H053SPSWQ is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and LED backlighting requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 compliance.

Supply support for DMTH15H053SPSWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-reliability, high-temperature power conversion in engine control, ADAS, and electrified vehicle subsystems.

FAQ

What is the maximum continuous drain current at TC = +100°C?

The DMTH15H053SPSWQ supports 18A continuous drain current when case temperature is maintained at +100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capacity at elevated temperatures and must be validated using the provided R_θJC = 1.4°C/W and actual PCB copper area.

Is the body diode suitable for synchronous rectification?

Yes-the integrated body diode has a typical forward voltage of 0.9V at 20A and reverse recovery charge (Q_RR) of 87nC, enabling use in synchronous rectification topologies. However, external Schottky diodes may be preferred in ultra-high-efficiency designs due to lower V_F and faster t_RR.

Does this MOSFET require gate resistors for stability?

A gate resistor of 6Ω is used in the datasheet's switching time characterization (t_D(ON), t_R, etc.), and Diodes recommends 5–10Ω series resistance to dampen gate oscillation and control dV/dt in high-noise automotive environments. Values below 3Ω increase risk of ringing; above 20Ω degrades switching speed unnecessarily.

How does the PowerDI5060-8 package compare thermally to SO-8?

The PowerDI5060-8 delivers 1.4°C/W R_θJC-over 3× better than typical SO-8 packages (~4.5°C/W)-due to its large exposed drain pad directly soldered to PCB copper. This enables >100W power dissipation with proper 1-inch² 2oz copper, whereas SO-8 would require external heatsinking at >25W.