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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH3002LK3-13

Name: DMTH3002LK3-13
Brand: Diodes Incorporated
SKU: DMTH3002LK3-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH3002LK3-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: DMTH3002LK3-13.pdf

Description:: MOSFET BVDSS: 25V~30V TO252 T&R

Quantity:: RFQ Add To RFQ list

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Inventory:9,101

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Product details

Overview

DMTH3002LK3-13 from Diodes Incorporated is a 30V, 175°C-rated N-channel enhancement-mode MOSFET in TO252 (DPAK) package, delivering 2.45 mΩ R_DS(ON) at V_GS = 10 V and 150 A continuous drain current at T_C = +25°C. It is engineered for high-efficiency power management in automotive-grade DC-DC converters and LED backlighting systems.

For engineers reviewing the DMTH3002LK3-13 datasheet, DMTH3002LK3-13 pinout, DMTH3002LK3-13 application, or DMTH3002LK3-13 equivalent, key selection criteria include its low R_DS(ON) at 4.5 V gate drive, AEC-Q101 qualification, thermal resistance of 1.4 °C/W (Junction-to-Case), and 175°C maximum junction temperature capability.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for simultaneous low conduction loss and fast switching. Its 4336 pF input capacitance (C_iss) and 188 pF reverse transfer capacitance (C_rss) support efficient gate driving at high frequencies up to 1 MHz, while the 69 nC total gate charge (Q_g at V_GS = 10 V) enables robust turn-on control in synchronous buck topologies.

The device integrates a body diode with 0.65 V typical forward voltage (V_SD) at 1 A and 48 ns reverse recovery time (t_RR), enabling reliable freewheeling operation in hard-switched converters. Its 312 mJ avalanche energy rating (E_AS) ensures ruggedness under transient overvoltage conditions without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial bus applications.
R_DS(ON)	2.45 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 120 A in high-current power stages.
I_D (max)	150 A @ T_C = +25°C - Supports high-current DC-DC phases without parallel devices.
R_θJC	1.4 °C/W - Allows direct thermal coupling to heatsinks or PCB copper planes for high-power density layouts.
Q_g	69 nC @ V_GS = 10 V - Determines gate driver current requirement (~1.4 A peak for 50 ns rise time).
T_J (max)	+175°C - Qualified for under-hood automotive environments and industrial high-temp enclosures.
C_iss	4336 pF @ V_DS = 15 V - Sets Miller plateau duration and influences EMI behavior in switching waveforms.

Pinout & Package

Package: TO252 (DPAK), surface-mount, exposed drain pad for thermal and electrical connection. Molded green compound, RoHS-compliant matte tin finish on copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or return path in buck/synchronous rectifier configurations.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate requiring <100 nA leakage; driven by dedicated gate driver ICs or microcontroller PWM outputs.
Pin 3 (Drain)	Power output (D)	Exposed metal pad - electrically and thermally connected to drain; must be soldered to large copper area for thermal dissipation and low-inductance current path.

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5 V	3.5 mΩ - Enables efficient operation directly from 5 V logic-level gate drivers without level-shifting.
AEC-Q101 qualified	Stress-tested per automotive reliability standards - supports use in engine control units and ADAS power supplies.
Green compound packaging	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - meets EU ELV and OEM environmental compliance requirements.
Low C_rss/C_iss ratio	188 pF / 4336 pF = 4.3% - Reduces Miller-induced shoot-through risk and improves controllability in high-dV/dt environments.
175°C TJ max	Enables derating margin for sustained 150°C ambient designs - critical for sealed enclosures and high-power density modules.

Applications

Automotive DC-DC Converters

Industrial LED Backlighting

Use Scenario: 12 V to 5 V/3.3 V point-of-load conversion in infotainment head units and instrument clusters.

IC Role / Device Role / Timing Role: High-side or low-side synchronous rectifier switch in buck regulator topology.

Use Value: 2.45 mΩ R_DS(ON) reduces conduction loss by >30% vs. legacy 5 mΩ MOSFETs, improving efficiency from 92% to 94.5% at 50 A load.

Use Scenario: Constant-current LED driver for commercial signage and medical display panels.

IC Role / Device Role / Timing Role: PWM-controlled high-current switch modulating LED string current up to 120 A peak.

Use Value: 175°C rating allows operation in thermally constrained metal housings without forced air cooling.

Server VRM Power Stages

Industrial Motor Drive Half-Bridge

Use Scenario: Multiphase CPU/GPU voltage regulator modules in data center servers.

IC Role / Device Role / Timing Role: Low-side switch in interleaved buck phase leg, operating at 300–600 kHz.

Use Value: 4336 pF C_iss and 69 nC Q_g enable clean 20 ns gate transitions with minimal driver power overhead.

Use Scenario: 24 V BLDC motor control in factory automation actuators and HVAC blowers.

IC Role / Device Role / Timing Role: High-current half-bridge low-side switch handling 100 A pulsed loads.

Use Value: 312 mJ E_AS withstands inductive kickback during rapid PWM commutation without clamping diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(ON) = 3.0 mΩ @ 10 V; 175°C rating not AEC-Q101 qualified; higher C_iss (5200 pF)	Lacks automotive qualification; suitable for industrial-only designs with relaxed reliability requirements	Select when AEC-Q101 is not required and cost sensitivity outweighs 0.55 mΩ R_DS(ON) penalty.
DMTH3002LK3Q	Identical electrical specs; automotive-grade variant with enhanced traceability and extended temperature screening per AEC-Q101	Qualified for safety-critical automotive subsystems (e.g., ADAS, EPS); requires separate part number ordering	Choose for production automotive programs where PPAP documentation and lot-level test reports are mandatory.

Compared with IRL3803PBF, DMTH3002LK3-13 delivers lower conduction loss and automotive qualification; compared with DMTH3002LK3Q, it shares identical silicon but omits automotive-specific traceability-making it ideal for cost-sensitive industrial power stages where full AEC-Q101 documentation is unnecessary.

Availability

DMTH3002LK3-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial LED backlighting systems, and server VRM power stages requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for DMTH3002LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' "PowerMOS" product line, developed specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications where low R_DS(ON), thermal robustness, and AEC-Q101 compliance are essential.

FAQ

What is the maximum allowable gate-source voltage for DMTH3002LK3-13?

The absolute maximum gate-source voltage (V_GS) is ±16 V, as specified in the Absolute Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10 V for full enhancement or 4.5 V for logic-level compatibility, both well within safe margins.

Does DMTH3002LK3-13 require a gate resistor, and if so, what value is recommended?

Yes-a series gate resistor is required to dampen ringing and control dV/dt. Based on its 0.75 Ω intrinsic gate resistance and 69 nC Q_g, a 4.7 Ω resistor is validated in the datasheet for 4.5 V drive (t_R = 33 ns). For 10 V drive at 500 kHz, 10 Ω provides optimal trade-off between switching speed and EMI suppression.

Can DMTH3002LK3-13 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(ON) (see Figure 6) ensures inherent current sharing. Layout must balance trace inductance and thermal coupling: use symmetrical PCB routing, shared thermal pad, and individual gate resistors. Derate total current by 15% versus single-device rating to account for mismatch.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No-the exposed drain pad is internally connected to the MOSFET's drain terminal and must be soldered to a copper pour tied to the drain net. It is not isolated; using it as a thermal pad only (without electrical connection) will cause catastrophic failure due to floating high-voltage potential and thermal runaway.

DMTH3002LK3-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.45mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 69 nC @ 15 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 4336 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

DMTH3002LK3-13 FAQ

1.How can I place an order for DMTH3002LK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH3002LK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH3002LK3-13 reliable?

The price and inventory of DMTH3002LK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH3002LK3-13 is usually 5 days.

3.What payment methods are accepted for DMTH3002LK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH3002LK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH3002LK3-13?

DMTH3002LK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH3002LK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH3002LK3-13?

For technical support, including DMTH3002LK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH3002LK3-13 requirements.

6.How does Aetrix verify that DMTH3002LK3-13 is sourced from the original manufacturer or authorized distributors?

All DMTH3002LK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH3002LK3-13 meets industry standards.

7.What is the process for return or replacement of DMTH3002LK3-13?

All DMTH3002LK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH3002LK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH3002LK3-13 part is unused and in its original packaging.

Return procedure for DMTH3002LK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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