Diodes Incorporated DMTH3002LPS-13

Overview

DMTH3002LPS from Diodes Incorporated is a 30V, 240A N-channel enhancement-mode Power MOSFET in PowerDI5060-8 (Type K) package, featuring 1.25 mΩ R_DS(ON) @ V_GS = 10V, 175°C max junction temperature, and AEC-Q101 qualification - deployed as a high-current load switch in automotive DC-DC converters.

For engineers reviewing the DMTH3002LPS datasheet, DMTH3002LPS pinout, DMTH3002LPS application, or DMTH3002LPS equivalent, key selection criteria include low on-resistance at 4.5V gate drive, thermal resistance of 1.1°C/W (junction-to-case), fast switching (t_F = 26 ns), and thermally optimized exposed-drain PowerDI package for high-power density board layouts.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve ultra-low R_DS(ON) while maintaining robust avalanche capability (E_AS = 700 mJ, I_AS = 15 A). Its gate threshold voltage (1–2 V) enables compatibility with 3.3V and 5V logic-level drivers, and its low Q_G (37 nC @ 4.5V, 77 nC @ 10V) supports high-frequency PWM operation.

The device integrates a low-V_SD body diode (0.8–1.1 V @ 25 A) with t_RR = 44 ns and Q_RR = 52 nC, enabling efficient synchronous rectification and reverse recovery in buck converters. Thermal design leverages the exposed drain pad for direct PCB copper conduction, achieving R_θJC = 1.1°C/W and supporting continuous 136 W power dissipation at T_C = 25°C.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (Type K), surface-mount, thermally enhanced with exposed drain pad (8-terminal configuration: 6× Drain, 1× Source, 1× Gate). Dimensions: 5.15 × 6.15 × 1.0 mm (max height), 0.097 g weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IPB017N04LGATMA1 and SIHL240N30S, DMTH3002LPS delivers the lowest R_DS(ON) in a sub-1.1 mm profile with AEC-Q101 qualification - making it optimal for space-constrained, high-efficiency automotive and industrial load switches where gate drive strength and thermal interface simplicity are critical.

Availability

DMTH3002LPS is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial load switching, and high-density point-of-load modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMTH3002LPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

The DMTH3002LPS belongs to Diodes' Power MOSFET product line, engineered specifically for high-current, low-voltage switching applications demanding ultra-low on-resistance, AEC-Q101 reliability, and thermally optimized packaging for automotive and industrial power systems.

FAQ

What is the maximum continuous drain current for DMTH3002LPS at 100°C case temperature?

The datasheet specifies ID = 240 A at both TC = +25°C and TC = +100°C under steady-state conditions with proper thermal management. This reflects its robust thermal design - the 1.1°C/W R_θJC and 175°C T_J(max) allow full-rated current up to 100°C case temperature without derating, provided the PCB layout maintains effective heat transfer from the exposed drain pad.

Does DMTH3002LPS support logic-level gate drive at 3.3V?

While the gate threshold voltage V_GS(TH) is specified as 1–2 V, the device is not fully enhanced at 3.3V: R_DS(ON) rises to ~4.5 mΩ at V_GS = 3.3V (interpolated from Figure 4). For reliable low-loss operation, ≥4.5V gate drive is recommended - 3.3V is usable only in low-current or non-critical bias applications where higher on-resistance is acceptable.

How is the PowerDI5060-8 (Type K) package thermally connected to the PCB?

The PowerDI5060-8 exposes the drain metal on the bottom surface as a large thermal pad (D2 = 3.98 mm, E2 = 3.66 mm). It must be soldered to a minimum 1-inch² copper pour on the PCB's inner or bottom layer, using thermal vias (≥8× 0.3 mm diameter) to internal ground/power planes. The datasheet's suggested pad layout (Document DS38282, page 6) defines exact stencil aperture and copper relief dimensions to ensure void-free solder joints and optimal thermal transfer.

Is DMTH3002LPS suitable for synchronous rectification in a 300 kHz buck converter?

Yes - its 44 ns body diode reverse recovery time (t_RR) and 52 nC Q_RR, combined with low Q_G (77 nC) and fast switching (t_F = 26 ns), make it well-suited for synchronous rectification at 300 kHz. However, gate drive must be carefully timed to avoid shoot-through; the 1–2 V V_GS(TH) requires precise dead-time control, and layout must minimize gate loop inductance to prevent oscillation during 25A+ transitions.