Diodes Incorporated DMTH3004LK3-13

Overview

DMTH3004LK3-13 from Diodes Incorporated is a 30V, 75A N-channel enhancement-mode MOSFET in TO252 (DPAK) package, featuring 4 mΩ R_DS(ON) at V_GS = 10 V and 7 mΩ at V_GS = 4.5 V, qualified to AEC-Q101, and rated for continuous operation up to +175°C junction temperature. It serves as a high-current, low-loss power switch in automotive and industrial DC-DC converters.

For engineers reviewing the DMTH3004LK3-13 datasheet, DMTH3004LK3-13 pinout, DMTH3004LK3-13 application, or DMTH3004LK3-13 equivalent, key selection criteria include R_DS(ON) at 4.5 V gate drive, thermal resistance R_θJC = 1.4 °C/W, pulsed drain current of 160 A, avalanche energy rating of 287 mJ, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET employs planar trench-gate technology optimized for simultaneous low conduction loss and fast switching, with C_iss = 2370 pF and Q_g = 44 nC at V_GS = 10 V. Its body diode exhibits V_SD = 0.75 V at I_S = 1 A and t_RR = 25 ns under specified conditions.

The device operates across –55°C to +175°C junction range, with R_DS(ON) normalized variation ≤1.5× from 25°C to 175°C at V_GS = 10 V, and supports safe operating area (SOA) up to 10 ms single-pulse at 75 A/30 V with T_C = 25°C.

Key Specifications

Pinout & Package

Package: TO252 (DPAK), surface-mount, 3-terminal plastic case with exposed drain pad for thermal and electrical connection. Dimensions per AP02002: D = 6.10 mm, E = 6.58 mm, H = 9.91 mm, L = 1.59 mm, b3 = 5.33 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB034N03L G and STL220N3LLH6, DMTH3004LK3-13 delivers optimal balance of automotive qualification, 175°C capability, moderate gate charge, and industry-standard TO252 footprint-making it preferred for space-constrained, thermally aggressive, and safety-critical power stages.

Availability

DMTH3004LK3-13 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, and LED backlighting systems requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for DMTH3004LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-reliability, high-temperature power switching in engine control, lighting, and ADAS subsystems.

FAQ

What is the maximum allowable gate-source voltage for DMTH3004LK3-13?

The absolute maximum V_GS rating is +20 V and –16 V, as specified in the Maximum Ratings table. Exceeding +20 V risks permanent gate oxide damage, while –16 V may cause threshold shift or gate leakage increase. Recommended operating range is ±12 V for robustness, especially in automotive transients where load-dump spikes can couple into gate traces.

Can DMTH3004LK3-13 be used in a high-side configuration with 12 V gate drive?

Yes, but requires a dedicated high-side gate driver IC (e.g., TC4427 or LM5113) to generate gate voltage above the source potential. The device's 1 V minimum V_GS(TH) and 7 mΩ R_DS(ON) at 4.5 V make it compatible with 5 V or 12 V logic-level drivers when properly biased, though bootstrap or isolated supply is mandatory for sustained high-side operation.

How does the 175°C rating impact PCB layout and thermal design?

The 175°C T_J(max) allows operation at higher ambient temperatures without current derating, but thermal design must still maintain T_J ≤ 175°C. With R_θJC = 1.4 °C/W, a 25°C ambient and 1.9 W power dissipation (per Note 5) requires ≤105°C rise to case - achievable via ≥1 inch² 2 oz copper pad and optional heatsink. Layout must avoid thermal isolation of the drain pad.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes - its 25 ns reverse recovery time (t_RR) and 37 nC Q_RR are optimized for medium-frequency (100–500 kHz) synchronous rectification. However, for >1 MHz operation, a Schottky or GaN-based solution may yield lower losses due to absence of minority-carrier recovery delay.