Diodes Incorporated DMTH3004LK3Q-13

Overview

DMTH3004LK3Q-13 from Diodes Incorporated is a 30V, 75A N-channel enhancement-mode MOSFET in TO252 (DPAK) package, qualified to AEC-Q101 and rated for operation up to +175°C. It delivers 4mΩ R_DS(ON) at V_GS = 10V and 7mΩ at 4.5V, with low input capacitance (2370pF) and fast switching (t_D(ON) = 6.2ns), enabling high-efficiency power management in automotive DC-DC converters and BLDC motor control stages.

For engineers reviewing the DMTH3004LK3Q-13 datasheet, DMTH3004LK3Q-13 pinout, DMTH3004LK3Q-13 application, or DMTH3004LK3Q-13 equivalent, key selection criteria include its AEC-Q101 qualification, thermal robustness at 175°C junction temperature, low R_DS(ON) at 4.5V gate drive, SOA performance under pulsed load, and DPAK package suitability for thermally demanding PCB layouts.

Technical Context

This MOSFET employs planar trench-gate silicon technology optimized for automotive-grade reliability and high-temperature operation. Its gate threshold voltage (1–3V) ensures stable turn-on across wide temperature ranges, while the low Q_G (44nC at 10V) and Q_GD/Q_GS ratio support efficient hard-switching in synchronous buck topologies.

The device integrates a robust body diode with 25ns reverse recovery time and 37nC Q_RR, enabling reliable freewheeling in motor drive half-bridges. Its R_θJC of 1.4°C/W and exposed drain pad design allow direct thermal coupling to heatsinks or copper planes-critical for sustained 75A conduction in engine bay environments.

Key Specifications

Pinout & Package

Package: TO252 (DPAK) with exposed drain pad for thermal dissipation. Molded green compound, UL 94V-0 rated, lead-free and halogen-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N3LLH6 and IPB180N03L3G, DMTH3004LK3Q-13 offers optimal balance of DPAK footprint, 4.5V drive compatibility, and AEC-Q101-certified 175°C operation-making it ideal for space-constrained, high-temperature automotive power stages where gate drive simplicity and thermal reliability are prioritized over ultra-low R_DS(ON).

Availability

DMTH3004LK3Q-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, BLDC motor control inverters, and reverse polarity protection circuits requiring stable component supply, AEC-Q101 compliance, and continuous operation up to +175°C junction temperature.

Supply support for DMTH3004LK3Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949-certified operations.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-temperature, high-current switching in engine control, body electronics, and electrification subsystems-emphasizing AEC-Q101 qualification, PPAP readiness, and thermal resilience.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH3004LK3Q-13 sustains 75A continuous drain current at T_C = +100°C, as specified in the Absolute Maximum Ratings table. This reflects its ability to maintain full current capability under elevated thermal conditions typical in automotive power modules, provided the PCB layout provides adequate thermal conduction from the exposed drain pad.

Is this MOSFET suitable for synchronous rectification in a 400kHz buck converter?

Yes-its 44nC total gate charge at 10V, 240pF reverse transfer capacitance, and 6.2ns turn-on delay enable clean, low-loss switching at 400kHz. The low Q_GD/Q_GS ratio minimizes shoot-through risk, and the body diode's 25ns t_RR supports efficient synchronous gate timing without excessive dead-time penalties.

Does the TO252 package require special PCB layout considerations?

Yes-the exposed drain pad must be connected to a minimum 1-inch square 2oz copper area for thermal performance. Thermal vias (≥6×0.3mm) beneath the pad are recommended to transfer heat to inner layers. Gate and source traces should be short and symmetric to reduce parasitic inductance and prevent oscillation during fast switching.

How does the device perform under repetitive avalanche conditions?

It is rated for 10.7A single-pulse avalanche current and 287mJ single-pulse avalanche energy (L = 5mH). While not rated for repetitive avalanche, its rugged planar structure and controlled SOA allow limited unclamped inductive switching in well-designed circuits-however, snubber networks or clamping diodes are recommended for sustained repetitive stress.