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Diodes Incorporated DMTH31M7LPSQ-13
- Part No.:
- DMTH31M7LPSQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH31M7LPSQ-13.pdf
- Description:
- MOSFET BVDSS: 25V~30V POWERDI506
- Quantity:
- Payment:
- Shipping:
Inventory:9,710
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Product details
Overview
DMTH31M7LPSQ-13 from Diodes Incorporated is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for 30V VDSS, 1.7mΩ RDS(ON) @ 10V VGS, and 100A ID at TC = +25°C. It operates up to +175°C junction temperature and is designed for automotive DC-DC converters, power management, and backlighting circuits.
For engineers reviewing the DMTH31M7LPSQ-13 datasheet, DMTH31M7LPSQ-13 pinout, DMTH31M7LPSQ-13 application, or DMTH31M7LPSQ-13 equivalent, key selection criteria include its low RDS(ON) at 4.5V gate drive (2.4mΩ), 100% unclamped inductive switching rating (65A/215mJ), and thermally optimized exposed-drain PowerDI5060-8 package with RθJC = 1.1°C/W.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for high-current, high-temperature automotive power stages. Its gate threshold voltage (1.0–3.0V) enables robust turn-on with standard 3.3V/5V logic-level drivers, while low Qgd × RDS(ON) figure-of-merit (21.6nC × 1.7mΩ ≈ 36.7 mΩ·nC) minimizes switching loss in synchronous buck topologies.
The device integrates a body diode with 32.5ns reverse recovery time and 55nC QRR at 15A/500A/μs, supporting high-frequency operation in bidirectional or freewheeling configurations. Thermal design is anchored by a low-junction-to-case resistance (1.1°C/W) and validated 175°C continuous operation under PPAP-controlled IATF16949 manufacturing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage for 12V automotive rail protection and 24V system interfaces. |
| RDS(ON) @ 10V | 1.7mΩ max - Enables <1.7W conduction loss at 100A, critical for high-efficiency DC-DC converter output stages. |
| RDS(ON) @ 4.5V | 2.4mΩ max - Ensures stable on-resistance with 5V gate drivers, supporting logic-level control without level-shifting. |
| ID (TC = 25°C) | 100A - Continuous drain current rating referenced to case temperature, defining thermal limit under heatsink mounting. |
| EAS | 215mJ - Avalanche energy rating confirms ruggedness against inductive switching transients in motor or solenoid drives. |
| RθJC | 1.1°C/W - Junction-to-case thermal resistance enables precise thermal modeling when mounted to copper pads or heatsinks. |
| TJ Range | −55°C to +175°C - Full automotive temperature range qualification, including engine bay and transmission control environments. |
Pinout & Package
Package: PowerDI5060-8 - surface-mount, thermally enhanced 8-pin package with exposed drain pad (pins 2, 4, 6, 8 connected internally to drain), optimized for high-current PCB thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Primary source connection; tied to internal source die and external PCB ground plane for low-inductance return path. |
| 2 | Drain | Exposed drain pad - electrically and thermally connected to pins 2, 4, 6, 8; requires soldered thermal pad for RθJC = 1.1°C/W performance. |
| 3 | Gate | Control input; low gate charge (Qg = 90nC @ 10V) reduces driver power and enables fast 6.9ns turn-on delay. |
| 4 | Drain | Secondary drain terminal - redundant connection to same internal drain node as pin 2 for current sharing and layout flexibility. |
| 5 | Source | Secondary source terminal - parallel path to pin 1, reducing source inductance in high-di/dt applications like DC-DC switching. |
| 6 | Drain | Third drain terminal - enhances thermal and electrical connection to exposed pad; improves current derating at high ambient. |
| 7 | Source | Third source terminal - supports multi-point grounding for noise-sensitive automotive subsystems. |
| 8 | Drain | Fourth drain terminal - completes symmetric drain layout for balanced current distribution across all four drain pins. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated operation | Validated continuous operation at maximum junction temperature, enabling placement near heat sources in engine control units. |
| 100% UIS tested | Every unit undergoes unclamped inductive switching stress (65A, 215mJ), ensuring reliability in flyback and boost converter failures. |
| Low Qgd × RDS(ON) | 21.6nC × 1.7mΩ = 36.7 mΩ·nC - reduces Miller-induced switching losses and improves hard-switching efficiency above 300kHz. |
| Green, halogen-free construction | <900ppm Br/Cl, <1000ppm Sb - meets automotive OEM environmental requirements and eliminates toxic fumes during reflow or field failure. |
| AEC-Q101 qualified + PPAP capable | Manufactured in IATF16949-certified facilities with full change control documentation, supporting Tier-1 automotive BOM compliance. |
Applications
| Automotive DC-DC Converters | LED Backlighting Drivers |
|---|---|
|
Use Scenario: High-current synchronous buck regulator supplying 5V/12V rails for ADAS camera modules and infotainment systems. IC Role / Device Role / Timing Role: Primary high-side switch operating at 300–500kHz with 100A peak current capability and low RDS(ON). Use Value: 1.7mΩ on-resistance limits conduction loss to ≤1.7W at full load, reducing thermal stress and enabling compact heatsinkless designs. |
Use Scenario: Constant-current LED driver for instrument cluster and center display backlighting in vehicles with wide ambient temperature range. IC Role / Device Role / Timing Role: Low-side PWM switch controlling LED string current with fast 34.5ns fall time and minimal shoot-through risk. Use Value: 2.4mΩ RDS(ON) at 4.5V gate drive ensures full on-state even with degraded MCU GPIO output, improving system robustness. |
| Engine Control Unit Power Stages | Body Control Module Load Switching |
|
Use Scenario: High-side driver for fuel injector or ignition coil control requiring high-voltage transient immunity and thermal resilience. IC Role / Device Role / Timing Role: Robust switching element handling 30V VDSS and 400A pulsed drain current during inductive kick events. Use Value: 215mJ EAS rating absorbs energy from 0.1mH inductive loads without avalanche failure, eliminating need for external snubbers. |
Use Scenario: Smart high-side load switch managing power to HVAC actuators, window motors, and lighting in body control modules. IC Role / Device Role / Timing Role: Protected power switch with integrated body diode and low thermal resistance for sustained 80A operation at 100°C case temperature. Use Value: RθJC = 1.1°C/W allows direct thermal coupling to chassis ground, enabling >80A continuous current without active cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | 30V, 1.4mΩ @ 10V, 220A rated, PowerFLAT 5x6 package, RθJC = 0.9°C/W | Higher current rating but larger footprint; lacks AEC-Q101 documentation for PPAP submission | Preferred for higher-current DC-DC where board space permits and PPAP is not required. |
| IPB017N10N5 | 100V, 1.7mΩ @ 10V, TO-263-7 package, RθJC = 0.7°C/W, AEC-Q101 qualified | Higher voltage rating increases cost and gate charge; over-specified for 12V/24V automotive rails | Only suitable if future 48V system compatibility or higher voltage transients are anticipated. |
Compared with STL220N3LLH6 and IPB017N10N5, DMTH31M7LPSQ-13 delivers optimal balance of AEC-Q101 compliance, thermal performance (RθJC = 1.1°C/W), and compact PowerDI5060-8 footprint-making it the most cost-effective and production-ready choice for 30V automotive power stages requiring PPAP support.
Availability
DMTH31M7LPSQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlighting drivers, and engine control unit power stages requiring stable component supply, full traceability, and long-term lifecycle assurance.
Supply support for DMTH31M7LPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
This MOSFET belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for automotive power conversion and load switching applications demanding extended temperature operation and PPAP-compliant manufacturing.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The DMTH31M7LPSQ-13 supports 80A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI5060-8 package under real-world heatsinking conditions and must be verified using the provided RθJC = 1.1°C/W and junction temperature limits.
Is this MOSFET compatible with 3.3V microcontroller gate driving?
No-its gate threshold voltage range is 1.0–3.0V, but full enhancement requires ≥4.5V VGS to achieve the rated 2.4mΩ RDS(ON). At 3.3V, RDS(ON) rises significantly (>5mΩ), increasing conduction loss. A gate driver or level shifter is required for reliable 3.3V logic control.
Does the device include integrated ESD protection on the gate?
The datasheet does not specify integrated gate ESD protection. The gate-source leakage (±100nA at ±16V) and maximum VGSS = ±16V indicate standard MOSFET gate oxide robustness, but external TVS or RC filtering is recommended in automotive environments with high EMI exposure.
How is the PowerDI5060-8 package thermally mounted on PCB?
The exposed drain pad (pins 2, 4, 6, 8) must be soldered to a large, thermally optimized copper area-minimum 1-inch square 2oz copper plate per the datasheet's Note 6-to achieve the rated RθJA = 52°C/W and PD = 2.4W. Thermal vias under the pad are strongly recommended for vertical heat transfer.
DMTH31M7LPSQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 90 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5741 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta), 113W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMTH31M7LPSQ-13 FAQ
1.How can I place an order for DMTH31M7LPSQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH31M7LPSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH31M7LPSQ-13 reliable?
The price and inventory of DMTH31M7LPSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH31M7LPSQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH31M7LPSQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH31M7LPSQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH31M7LPSQ-13?
DMTH31M7LPSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH31M7LPSQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH31M7LPSQ-13?
For technical support, including DMTH31M7LPSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH31M7LPSQ-13 requirements.
6.How does Aetrix verify that DMTH31M7LPSQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH31M7LPSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH31M7LPSQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH31M7LPSQ-13?
All DMTH31M7LPSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH31M7LPSQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH31M7LPSQ-13 part is unused and in its original packaging.
Return procedure for DMTH31M7LPSQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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