Diodes Incorporated DMTH32M5LPS-13

Overview

DMTH32M5LPS-13 from Diodes Incorporated is a 30V, 175°C-rated N-channel enhancement-mode MOSFET in PowerDI5060-8 package, delivering 2.2 mΩ R_DS(ON) at V_GS = 10 V and 170 A continuous drain current at T_C = +25°C. It serves as a high-current load switch or synchronous rectifier in DC-DC converters where low conduction loss and thermal efficiency are critical.

For engineers reviewing the DMTH32M5LPS-13 datasheet, DMTH32M5LPS-13 pinout, DMTH32M5LPS-13 application, or DMTH32M5LPS-13 equivalent, key selection criteria include its 1.5°C/W R_θJC, 3.2 mΩ R_DS(ON) at 4.5 V drive, 175°C maximum junction temperature, and thermally optimized PowerDI5060-8 exposed-drain package for high-power density board layouts.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low R_DS(ON) while maintaining fast switching (t_D(ON) = 7.2 ns, t_D(OFF) = 37.5 ns) and low gate charge (Q_g = 68 nC at 10 V). Its body diode exhibits 28.7 ns reverse recovery time and 45.8 nC Q_RR, supporting efficient synchronous rectification.

The device operates across –55°C to +175°C junction range with 1.5°C/W junction-to-case thermal resistance, enabled by an exposed copper drain pad in the PowerDI5060-8 package. It supports 30 V V_DSS, ±16 V V_GSS, and 350 A pulsed drain current under 1% duty cycle conditions.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - surface-mount, thermally enhanced 8-terminal package with exposed drain pad on bottom side for low R_θJC. Dimensions: 5.15 × 6.15 × 1.0 mm (L × W × H), 0.097 g weight, UL 94V-0 rated molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB017N04LGATMA1 and SiR626DP-T1-GE3, DMTH32M5LPS-13 offers the lowest profile (1.0 mm), best thermal performance (1.5°C/W), and optimal fit for space-constrained, high-current 24–30 V systems-especially where PowerDI5060-8's exposed-drain layout is already supported.

Availability

DMTH32M5LPS-13 is available at Aetrix Electronics and suitable for DC-DC converters, high-current load switches, and motor drive half-bridge legs requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for DMTH32M5LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

This MOSFET belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-current power conversion and load switching applications demanding low R_DS(ON), robust thermal performance, and AEC-Q101-compliant variants.

FAQ

What is the maximum allowable gate-source voltage for DMTH32M5LPS-13?

The absolute maximum V_GS is ±16 V. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 12 V maximum with transient clamping, especially in noisy environments where ringing may cause overshoot beyond 10 V logic levels.

Can DMTH32M5LPS-13 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(ON) (see Figure 6) ensures inherent current sharing when paralleled. However, layout symmetry (matched gate and source inductance) and individual gate resistors (≥1 Ω) are required to suppress oscillation and ensure balanced dynamic current distribution across devices.

Is the PowerDI5060-8 package lead-free and RoHS compliant?

Yes-DMTH32M5LPS-13 features matte tin annealed over copper leadframe, fully compliant with EU RoHS directives 2002/95/EC, 2011/65/EU, and 2015/863/EU. It is also halogen- and antimony-free ("Green" per Diodes' specification: Br/Cl <900 ppm each, Sb <1000 ppm).

Does DMTH32M5LPS-13 require a gate resistor for safe operation?

A gate resistor (typically 1–5 Ω) is strongly recommended to dampen gate ringing caused by parasitic inductance and prevent unintended turn-on due to dV/dt coupling. The device's 0.6 Ω intrinsic gate resistance is insufficient alone; external resistance controls turn-on/turn-off speed and reduces EMI in high-frequency switching applications.