Diodes Incorporated DMTH4001SPSQ-13

Overview

DMTH4001SPSQ-13 from Diodes Incorporated is a 40V, 225A N-channel enhancement-mode MOSFET in PowerDI5060-8 (Type K) package, qualified to AEC-Q101 and rated for +175°C operation. It delivers 0.73mΩ typical R_DS(ON) at V_GS = 10V, supports 900A pulsed drain current, and features 100% production-tested UIS robustness-designed for high-reliability automotive power stages including engine management and DC-DC converters.

For engineers reviewing the DMTH4001SPSQ-13 datasheet, DMTH4001SPSQ-13 pinout, DMTH4001SPSQ-13 application, or DMTH4001SPSQ-13 equivalent, key selection criteria include its 0.8°C/W R_θJC, thermally efficient exposed-drain package, AEC-Q101 qualification with PPAP support, and low-profile 1.1mm height for space-constrained under-hood modules.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-current automotive power conversion. Its gate charge profile (Q_g = 144nC, Q_gd = 24nC) enables efficient hard-switching at 20V V_DD with 50A ID, while Crss of 156pF ensures stable voltage-controlled turn-off behavior in synchronous rectification.

The device integrates a co-packaged body diode with 0.7V typical V_SD at 20A and 68ns reverse recovery time (t_RR), supporting bidirectional energy transfer in buck-boost and LLC topologies. Thermal design is anchored by a 0.8°C/W junction-to-case resistance referenced to the exposed drain pad, enabling direct heatsink mounting without thermal vias.

Key Specifications

Pinout & Package

PowerDI5060-8 (Type K) is a surface-mount, thermally enhanced package with an exposed drain pad occupying 80% of the bottom footprint. It features eight terminals: four parallel drain connections (D), two source connections (S), one gate (G), and one thermal pad tied to drain potential.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Compared with STL220N4F7AG and IXTQ220N04P, DMTH4001SPSQ-13 uniquely combines AEC-Q101 qualification, 0.8°C/W thermal resistance, and 1.0mΩ R_DS(ON) in a low-profile surface-mount package-making it optimal for space-constrained, safety-critical automotive power stages where qualification and thermal density are non-negotiable.

Availability

DMTH4001SPSQ-13 is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and automotive DC-DC converters requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for DMTH4001SPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with IATF 16949-certified manufacturing.

This MOSFET belongs to Diodes' PowerDI® automotive-qualified power transistor family, engineered specifically for high-current, high-temperature under-hood applications demanding AEC-Q101 compliance and production-level UIS robustness.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

At T_C = +100°C, the DMTH4001SPSQ-13 supports 160A continuous drain current, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI5060-8 package and must be validated against actual PCB layout, copper area, and airflow conditions in the target application.

Does this MOSFET require a negative gate voltage for reliable turn-off in high-noise automotive environments?

No. The device has a gate threshold voltage (V_GS(TH)) range of 2.0–4.0V and is fully enhanced at V_GS = 0V. A gate drive of 0V to 10V is sufficient; negative gate bias is not required or recommended, as V_GS rating is ±20V and system noise immunity is achieved via layout and gate resistor selection.

Can the exposed drain pad be electrically isolated from the PCB ground plane?

No-the exposed drain pad is internally connected to all drain terminals and must be soldered to a copper pour tied to the drain net. Isolating it would compromise thermal performance and violate the package's mechanical and electrical design; thermal vias should connect the pad to inner-layer ground or power planes only if those layers are at drain potential.

Is the 100% UIS test performed on every production unit?

Yes-per the datasheet, 100% Unclamped Inductive Switching testing is conducted in final production test. Each unit is subjected to a controlled inductive energy pulse (L = 0.1mH, I_AS = 93.8A, E_AS = 440mJ) to verify avalanche ruggedness before shipment, ensuring end-application reliability without requiring additional screening.