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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH4002SCTB-13

Name: DMTH4002SCTB-13
Brand: Diodes Incorporated
SKU: DMTH4002SCTB-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH4002SCTB-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: DMTH4002SCTB-13.pdf

Description:: MOSFET BVDSS: 31V~40V TO263 T&R

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Product details

Overview

DMTH4002SCTB from Diodes Incorporated is a 40V, 192A N-channel enhancement-mode MOSFET in TO263AB (D2PAK) package, rated for continuous operation at +175°C junction temperature, with R_DS(ON) = 2.22 mΩ @ V_GS = 10V and Q_g = 77.5 nC - deployed in high-current DC-DC converters and engine management systems where low conduction loss and robust UIS performance are critical.

For engineers reviewing the DMTH4002SCTB datasheet, DMTH4002SCTB pinout, DMTH4002SCTB application, or DMTH4002SCTB equivalent, key selection criteria include its 0.9°C/W R_θJC, 100% production-tested UIS capability, 175°C thermal rating, and D2PAK drain-source layout optimized for high-power PCB thermal relief and current routing.

Technical Context

This MOSFET employs planar silicon process technology to achieve ultra-low R_DS(ON) while maintaining controlled gate charge (Q_g = 77.5 nC) and fast switching (t_r = 8.0 ns, t_f = 11.6 ns). Its 3 mΩ max R_DS(ON) is specified at V_GS = 10V and I_D = 90A, with normalized on-resistance stable up to 175°C.

The device integrates a co-packaged body diode with V_SD = 0.8–1.2 V @ I_S = 20A and t_RR = 46.4 ns, supporting synchronous rectification and freewheeling in high-frequency power stages. It meets JEDEC reliability standards and is qualified per AEC-Q101 for automotive-grade applications when ordered with Q-suffix variants.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche onset; sets upper limit for input/output rail compatibility in 12V/24V/48V systems.
R_DS(ON) Max	3 mΩ @ V_GS = 10V - Enables <1.5 W conduction loss at 90A, reducing heatsink requirements in high-current power stages.
I_D Max (T_C = 25°C)	192 A - Continuous drain current rating under ideal case-cooling conditions; defines maximum steady-state load handling capacity.
Q_g	77.5 nC - Total gate charge required for full turn-on; determines driver strength requirement and switching energy loss.
R_θJC	0.9 °C/W - Junction-to-case thermal resistance; enables direct thermal interface to heatsink or copper plane for high-power dissipation.
T_J Max	+175°C - Maximum operating junction temperature; supports under-hood automotive and industrial environments without derating.
E_AS	551.8 mJ - Single-pulse avalanche energy rating; ensures survivability during inductive load switching transients.

Pinout & Package

Package: TO263AB (D2PAK), surface-mount with exposed drain pad for thermal and electrical connection. Molded plastic case, UL 94V-0 rated, matte tin annealed terminals.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Exposed metal tab electrically connected to drain; must be soldered to large copper area for thermal conduction and current return.
Source	Reference node for gate drive and current sensing	Low-inductance source connection essential for accurate gate control and minimization of shoot-through risk in half-bridge configurations.
Gate	Control terminal for channel modulation	High-impedance input requiring low-ESR gate resistor (R_g = 1.04 Ω typical) to damp ringing and control dV/dt.

Key Features

Feature	Design Value
+175°C rated operation	Enables deployment in engine bay, transmission control, and industrial motor drives without thermal derating penalties.
100% production UIS tested	Guarantees avalanche ruggedness across every unit - eliminates field failure risk from inductive switching stress.
Low Q_g (77.5 nC)	Reduces gate driver power demand and switching transition time, improving efficiency in 100–500 kHz DC-DC topologies.
Lead-free, halogen-free "Green" construction	Complies with RoHS 3 and automotive environmental mandates without compromising thermal or electrical performance.
0.9 °C/W R_θJC	Supports >150 W continuous power dissipation with minimal ΔT between junction and heatsink, simplifying thermal design.

Applications

Engine Management Systems

Body Control Modules

Use Scenario: High-side load switching for fuel injectors and ignition coils in 12V/42V vehicle platforms.

IC Role / Device Role / Timing Role: Power switch controlling pulsed high-current loads with precise timing and fast turn-off to prevent coil saturation.

Use Value: Low R_DS(ON) minimizes voltage drop during injection pulses; 175°C rating ensures reliability near hot engine surfaces.

Use Scenario: Centralized power distribution for lighting, window lifts, and seat actuators in modern vehicle architectures.

IC Role / Device Role / Timing Role: Smart high-side switch managing multiple 12V loads with integrated diagnostics and short-circuit protection.

Use Value: Robust UIS performance prevents failure during cable disconnect events; low Q_g enables fast PWM dimming control.

DC-DC Converters

Industrial Motor Drives

Use Scenario: Primary-side synchronous rectifier in 48V-to-12V buck converters for server power supplies and telecom infrastructure.

IC Role / Device Role / Timing Role: High-current, low-loss power FET operating at 200–300 kHz with tight duty-cycle control.

Use Value: 2.22 mΩ R_DS(ON) reduces conduction loss by >30% vs. comparable 40V MOSFETs, improving full-load efficiency above 95%.

Use Scenario: Half-bridge leg in 3-phase inverter modules for HVAC compressors and pump controllers.

IC Role / Device Role / Timing Role: Main switching element handling 100+ A peak currents with fast commutation and thermal stability.

Use Value: 0.9 °C/W R_θJC allows direct mounting to aluminum heatsink, eliminating thermal interface material and reducing system BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404ZPBF	R_DS(ON) = 4.7 mΩ @ 10V; lower I_D (180A); no production UIS test; TO220 package	Limited to lower-current, non-automotive applications due to higher conduction loss and absence of avalanche screening	Select only if thermal budget permits higher R_DS(ON) and board space allows TO220 mounting.
STL220N4F7AG	R_DS(ON) = 2.1 mΩ @ 10V; 220A rating; T_J = 175°C; DFN8 5x6 package; no exposed drain tab	Requires multilayer PCB with internal ground planes for thermal management; unsuitable for bolt-down heatsinking	Prefer for space-constrained designs where thermal via density can replace external heatsink.

Compared with IRF1404ZPBF and STL220N4F7AG, DMTH4002SCTB uniquely combines production-tested UIS, D2PAK thermal interface, and sub-2.3 mΩ R_DS(ON) - making it optimal for high-reliability, high-current automotive and industrial switching where both ruggedness and efficiency are non-negotiable.

Availability

DMTH4002SCTB is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and DC-DC converters requiring stable component supply, long-term lifecycle support, and automotive-grade traceability.

Supply support for DMTH4002SCTB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This device belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-temperature, high-current switching in safety-critical vehicle subsystems and industrial power conversion.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH4002SCTB supports 136 A continuous drain current at T_C = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO263AB package under realistic heatsink conditions and must be validated with measured junction temperature using R_θJC = 0.9°C/W.

Does this MOSFET have an integrated body diode, and what are its key parameters?

Yes, it includes a co-packaged body diode with V_SD = 0.8–1.2 V at I_S = 20A and reverse recovery time t_RR = 46.36 ns. The diode is rated for 100 A continuous forward current at T_C = 25°C and supports freewheeling in synchronous buck and half-bridge topologies.

Is the DMTH4002SCTB qualified to AEC-Q101, and how does that differ from the standard part?

The base DMTH4002SCTB is qualified to JEDEC standards referenced in AEC-Q; however, full AEC-Q101 qualification requires the automotive-grade variant (e.g., DMTH4002SQ-13) with PPAP documentation, IATF 16949 manufacturing, and extended reliability testing - available separately with Q-suffix ordering codes.

What is the recommended PCB layout for thermal performance?

Diodes recommends a minimum 1-inch square copper pad connected to the exposed drain tab via ≥8 thermal vias (0.3 mm diameter, filled or plated), with inner-layer copper pours tied to ground or power planes. The datasheet specifies FR-4 with 2 oz copper and thermal bias to bottom layer for PD = 166.7 W rating.

DMTH4002SCTB-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 192A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 77.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7180 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 6W (Ta), 166.7W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263AB (D2PAK)

DMTH4002SCTB-13 FAQ

1.How can I place an order for DMTH4002SCTB-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH4002SCTB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH4002SCTB-13 reliable?

The price and inventory of DMTH4002SCTB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH4002SCTB-13 is usually 5 days.

3.What payment methods are accepted for DMTH4002SCTB-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH4002SCTB-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH4002SCTB-13?

DMTH4002SCTB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH4002SCTB-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH4002SCTB-13?

For technical support, including DMTH4002SCTB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH4002SCTB-13 requirements.

6.How does Aetrix verify that DMTH4002SCTB-13 is sourced from the original manufacturer or authorized distributors?

All DMTH4002SCTB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH4002SCTB-13 meets industry standards.

7.What is the process for return or replacement of DMTH4002SCTB-13?

All DMTH4002SCTB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH4002SCTB-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH4002SCTB-13 part is unused and in its original packaging.

Return procedure for DMTH4002SCTB-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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