Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMTH4004LK3-13

Part No.:
DMTH4004LK3-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixDMTH4004LK3-13.pdf
Description:
MOSFET N-CH 40V 100A TO252
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,338

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMTH4004LK3-13 from Diodes Incorporated is a 40V, 100A N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 175°C operation and qualified to AEC-Q101. It delivers 3 mΩ RDS(ON) at VGS = 10V and 5 mΩ at 4.5V, with 83 nC total gate charge and 0.8°C/W RθJC, enabling high-efficiency power switching in automotive engine management and DC-DC converters.

For engineers reviewing the DMTH4004LK3-13 datasheet, DMTH4004LK3-13 pinout, DMTH4004LK3-13 application, or DMTH4004LK3-13 equivalent, key selection criteria include its 175°C junction rating, 100% unclamped inductive switching capability, low Qg/Qgd ratio, AEC-Q101 qualification, and thermal performance under high-current pulsed loads.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while preserving fast switching dynamics. Its 0.7 Ω gate resistance, 74 pF Crss, and 13.2 ns rise time support efficient hard-switching in synchronous buck stages up to 300 kHz.

The device integrates a robust body diode with 48 ns reverse recovery time and 72 nC QRR, enabling reliable freewheeling in high-di/dt environments such as automotive solenoid drivers and motor phase-legs without external Schottky supplementation.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 40 V - Withstands 32 V DC bus with 25% margin; suitable for 24 V automotive systems.
RDS(ON) 3 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 70 A continuous drain current.
ID (TC = 25°C) 100 A - Package-limited continuous current; requires exposed-drain PCB copper area ≥25 mm × 25 mm.
Qg 83 nC @ VGS = 10 V - Dictates gate driver peak current requirement of ≥2 A for 40 ns turn-on.
RθJC 0.8 °C/W - Allows 180 W power dissipation with ≤144°C junction-to-case delta at TC = 25°C.
EAS 90 mJ - Supports single-pulse inductive energy handling up to L × I²/2 = 90 mJ (e.g., 0.2 mH × 30 A²).
TJ Range –55 to +175 °C - Validated operation across full automotive under-hood temperature envelope.

Pinout & Package

Package: TO252-3L (DPAK), surface-mount with exposed drain pad for thermal conduction. Molded green compound, UL 94V-0 rated, matte tin-plated copper leadframe.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Source) Source terminal (S) Low-side return path; connects to ground plane or low-side switch node; carries full load current.
Pin 2 (Gate) Control input (G) High-impedance MOSFET control node; requires <100 nA leakage drive; sensitive to ESD.
Pin 3 (Drain) Power output (D) Exposed metal pad - primary thermal path to PCB; electrically connected to drain; must be soldered to large copper area.

Key Features

Feature Design Value
175°C Junction Rating Enables direct placement in high-ambient zones (e.g., near exhaust manifolds) without derating or forced cooling.
100% UIS Tested Guarantees survival under worst-case inductive turn-off events (e.g., solenoid de-energization) without avalanche failure.
Low Qgd/Qg Ratio 11.2 nC / 83 nC ≈ 13.5% - Reduces Miller plateau duration, improving noise immunity and dV/dt ruggedness.
AEC-Q101 Qualified Validated for automotive use via stress testing including HTGB, HTRB, and temperature cycling per JESD22-A108.
Green & RoHS Compliant Halogen-free (<900 ppm Br+Cl), antimony-free (<1000 ppm), lead-free - meets EU ELV and OEM material declarations.

Applications

Engine Management Systems Body Control Modules

Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems operating at 12–14 V battery supply with 10–20 ms pulse widths.

IC Role / Device Role / Timing Role: Power switch controlling solenoid actuation; handles 15 A peak current with 100 µs turn-on/turn-off transitions.

Use Value: 100% UIS rating ensures reliability during rapid coil de-energization; 175°C rating supports under-hood mounting without heatsink.

Use Scenario: Low-side load switch for HVAC blower motors, power seats, and window lifters in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Ground-referenced switching element; sustains 30 A continuous current with PWM dimming at 20–100 Hz.

Use Value: 3 mΩ RDS(ON) limits I²R loss to <2.7 W at 30 A, reducing thermal stress on PCB and enabling compact layout.

DC-DC Converters Start-Stop Battery Systems

Use Scenario: Synchronous rectifier in 24 V → 5 V/10 A buck converter for infotainment head units.

IC Role / Device Role / Timing Role: Low-side synchronous FET; switches at 300 kHz with 50% duty cycle and 30 A peak current.

Use Value: 5 mΩ RDS(ON) at 4.5 V gate drive enables >95% efficiency without gate boost circuitry.

Use Scenario: Load dump protection and bidirectional power path control in 12 V start-stop battery management units.

IC Role / Device Role / Timing Role: Reverse polarity and overcurrent protection switch; conducts 80 A during cranking surge.

Use Value: 0.8°C/W RθJC and 180 W PD (TC = 25°C) allow transient 100 A pulses without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXTP110N04T4 Higher RDS(ON) (4.2 mΩ @ 10 V), higher Qg (105 nC), TO-220 package, no AEC-Q101 qualification. Lacks automotive qualification; unsuitable for under-hood deployment; requires heatsink for same current density. Select only for non-automotive industrial DC-DC where qualification and thermal footprint are secondary.
STL220N4LF8AG Lower voltage rating (40 V same), identical RDS(ON) (3 mΩ), but 100 nC Qg; AEC-Q101 qualified; PowerFLAT 5x6 package. Smaller footprint but lower thermal mass; RθJC = 1.2°C/W limits continuous power vs. TO252's 0.8°C/W. Prefer for space-constrained BMS modules where board area is critical and peak power is <120 W.

Compared with IXTP110N04T4 and STL220N4LF8AG, DMTH4004LK3-13 uniquely balances AEC-Q101 compliance, industry-leading 0.8°C/W thermal resistance, and 100% UIS validation - making it optimal for thermally demanding, safety-critical automotive power stages where reliability trumps size or cost.

Availability

DMTH4004LK3-13 is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and DC-DC converters requiring stable component supply, long-term automotive-grade availability, and traceable sourcing.

Supply support for DMTH4004LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-reliability, high-temperature power switching in engine control units, battery management, and chassis electronics.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH4004LK3-13 supports 100 A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This value is not derated from the 25°C rating because the device is package-limited and thermally designed to sustain full current at elevated case temperatures when mounted on adequate copper area.

Is the body diode suitable for synchronous rectification in a buck converter?

No - the integrated body diode has 48 ns reverse recovery time and 72 nC QRR, which causes significant switching loss and voltage overshoot in high-frequency synchronous rectification. It is intended for freewheeling only; external synchronous FETs or Schottky diodes are required for true synchronous operation above 100 kHz.

Does the TO252-3L package require solder paste stencil optimization for the exposed drain pad?

Yes - the exposed drain pad must be printed with ≥70% solder paste coverage using a 0.15 mm thick stencil and 75% open area pattern. Thermal vias (≥6×0.3 mm diameter, filled or capped) are required beneath the pad and connected to inner-layer ground planes to achieve the specified 0.8°C/W RθJC.

How does the 175°C rating impact PCB layout versus standard 150°C MOSFETs?

The 175°C rating allows uninterrupted operation at higher ambient temperatures, but does not relax layout requirements. The TO252-3L still demands ≥25 mm × 25 mm 2 oz copper on the primary side, minimum 0.5 mm clearance to other components, and avoidance of conformal coating over the drain pad - all per AP02001 and AP02002 land patterns.

DMTH4004LK3-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
83 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4450 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.9W (Ta), 180W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252-3

DMTH4004LK3-13 FAQ

1.How can I place an order for DMTH4004LK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH4004LK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH4004LK3-13 reliable?

The price and inventory of DMTH4004LK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH4004LK3-13 is usually 5 days.

3.What payment methods are accepted for DMTH4004LK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH4004LK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH4004LK3-13?

DMTH4004LK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH4004LK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH4004LK3-13?

For technical support, including DMTH4004LK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH4004LK3-13 requirements.

6.How does Aetrix verify that DMTH4004LK3-13 is sourced from the original manufacturer or authorized distributors?

All DMTH4004LK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH4004LK3-13 meets industry standards.

7.What is the process for return or replacement of DMTH4004LK3-13?

All DMTH4004LK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH4004LK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH4004LK3-13 part is unused and in its original packaging.

Return procedure for DMTH4004LK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH4004LK3-13 Tags

  • DMTH4004LK3-13
  • DMTH4004LK3-13 PDF
  • DMTH4004LK3-13 Datasheet
  • DMTH4004LK3-13 Specifications
  • DMTH4004LK3-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMTH4004LK3-13
  • Buy DMTH4004LK3-13
  • DMTH4004LK3-13 Price
  • DMTH4004LK3-13 Distributor
  • DMTH4004LK3-13 Supplier
  • DMTH4004LK3-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER