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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH4004SCTB-13

Name: DMTH4004SCTB-13
Brand: Diodes Incorporated
SKU: DMTH4004SCTB-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH4004SCTB-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: DMTH4004SCTB-13.pdf

Description:: MOSFET N-CH 40V 100A TO263AB T&R

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Product details

Overview

DMTH4004SCTB-13 from Diodes Incorporated is a 40V, 100A N-channel enhancement-mode MOSFET in TO263AB (D2PAK) package, featuring 3 mΩ R_DS(ON) at V_GS = 10 V, 175°C maximum junction temperature, and AEC-Q101 qualification-designed for high-current, high-temperature power switching in automotive engine management and DC-DC converters.

For engineers reviewing the DMTH4004SCTB-13 datasheet, DMTH4004SCTB-13 pinout, DMTH4004SCTB-13 application, or DMTH4004SCTB-13 equivalent, key selection criteria include R_DS(ON) stability over temperature, unclamped inductive switching robustness, gate charge (Q_g = 68.6 nC), thermal resistance (R_θJC = 1.1 °C/W), and automotive-grade reliability under +175°C operation.

Technical Context

This MOSFET employs planar silicon technology optimized for low on-resistance while maintaining fast switching performance via minimized Q_gd (14.2 nC) and low output capacitance (C_oss = 1441 pF). Its body diode supports synchronous rectification with V_SD = 1.3 V at 100 A and t_RR = 52.4 ns.

The device operates across –55°C to +175°C, with R_DS(ON) increasing only ~1.6× from 25°C to 175°C at 100 A, enabling stable conduction loss in thermally constrained environments. It is rated for 100% UIS (unclamped inductive switching) up to I_AS = 45 A and E_AS = 200 mJ, ensuring ruggedness in inductive load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial bus applications.
R_DS(ON) max	3 mΩ @ V_GS = 10 V, I_D = 100 A - Enables <1 W conduction loss at 100 A, critical for high-efficiency power stages.
I_D continuous	100 A @ T_C = +25°C - Sustains full-rated current when mounted on infinite heatsink, supporting high-power DC-DC and motor drive outputs.
Q_g	68.6 nC - Low total gate charge reduces driver power demand and enables efficient 100–500 kHz switching in SMPS designs.
R_θJC	1.1 °C/W - Enables direct thermal path to heatsink; allows >100 W dissipation with <115°C junction rise above case at 100 A.
T_J max	+175°C - Supports operation in under-hood automotive locations and sealed industrial enclosures without derating.
AEC-Q101	Qualified - Meets stress-test requirements for automotive electronics, including HTGB, HTRB, and UIS, confirming reliability in safety-critical systems.

Pinout & Package

Package: TO263AB (D2PAK), surface-mount, single-die N-channel MOSFET with exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Exposed copper tab - electrically connected to drain; must be soldered to PCB copper pour for thermal conduction and low-inductance return path.
Source	Reference node for gate control and current return	Low-impedance source terminal; ties to ground or low-side switch node; defines V_GS reference for gate drive.
Gate	Control electrode for channel formation	High-impedance input requiring <100 nA leakage; driven with 10 V for full enhancement; sensitive to ESD and ringing due to low C_iss = 4305 pF.

Key Features

Feature	Design Value
175°C rated junction temperature	Enables uninterrupted operation in engine bay, transmission control, or industrial motor drives where ambient exceeds 125°C.
100% UIS tested (IAS = 45 A, EAS = 200 mJ)	Guarantees survivability during inductive turn-off transients without external snubbers in solenoid or relay drivers.
Low Q_g/Q_gd ratio (68.6 nC / 14.2 nC)	Improves Miller immunity and reduces switching oscillation risk in high-dV/dt environments like half-bridge configurations.
RoHS-compliant, halogen- and antimony-free	Meets automotive OEM environmental mandates (Br+Cl <1500 ppm, Sb <1000 ppm); matte tin annealed finish ensures reliable solder wetting.
TO263AB mechanical robustness	UL 94V-0 mold compound and 1.4 g mass provide vibration resistance and thermal cycling endurance per AEC-Q200 Grade 1.

Applications

Engine Management Systems

Body Control Modules

Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems operating at 12 V nominal, 100 A peak pulse current.

IC Role / Device Role / Timing Role: Power switch controlling solenoid actuation with <10 µs turn-on delay and <100 ns fall time.

Use Value: Low R_DS(ON) minimizes heat generation during extended dwell times; 175°C rating prevents thermal shutdown during prolonged idling in hot climates.

Use Scenario: Load switch for HVAC blower motor, LED headlamp matrix, or power window motor in centralized body controller units.

IC Role / Device Role / Timing Role: High-current, fault-tolerant power distribution switch with integrated overcurrent and thermal protection interface.

Use Value: 100% UIS capability eliminates need for external flyback diodes; AEC-Q101 qualification ensures compliance with ISO 16750-2 load dump and pulse testing.

48 V Mild Hybrid DC-DC Converters

Industrial Motor Drives

Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V buck-boost converter for 48 V battery energy recovery.

IC Role / Device Role / Timing Role: Low-loss, high-frequency (200–300 kHz) power switch in hard-switched topology with 100 A average current.

Use Value: 3 mΩ R_DS(ON) and 68.6 nC Q_g jointly enable >97% conversion efficiency at full load; R_θJC = 1.1 °C/W supports compact heatsink design.

Use Scenario: Half-bridge leg in 3-phase inverter for servo drives or pump controllers handling 40–100 A RMS motor currents.

IC Role / Device Role / Timing Role: High-reliability, high-current switching element with fast turn-off (t_F = 8.1 ns) to minimize shoot-through risk.

Use Value: Stable R_DS(ON) vs. temperature ensures predictable conduction loss across –40°C to +85°C ambient; TO263AB mounting simplifies thermal interface to aluminum baseplate.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(ON) = 2.2 mΩ @ 10 V but rated only to +150°C; Q_g = 92 nC; TO263 package with different pinout (G-S-D vs D-S-G).	Lacks AEC-Q101 qualification; unsuitable for automotive under-hood use above 150°C ambient.	Select only for industrial 48 V systems where temperature margin is >25°C and qualification is not required.
IXTP100N04T4	R_DS(ON) = 3.2 mΩ @ 10 V; T_J max = +175°C; Q_g = 72 nC; TO220 package with higher R_θJC = 1.5 °C/W.	Through-hole mounting limits board-level automation; lower thermal efficiency requires larger heatsink for same 100 A load.	Prefer for prototyping or low-volume legacy designs where TO220 footprint is fixed and automated assembly is not needed.

Compared with STL220N4F7AG and IXTP100N04T4, DMTH4004SCTB-13 uniquely combines AEC-Q101 qualification, +175°C rating, lowest R_θJC, and surface-mount TO263AB packaging-making it the only choice for production automotive power stages requiring both thermal headroom and automated manufacturing compatibility.

Availability

DMTH4004SCTB-13 is available at Aetrix Electronics and suitable for engine management systems, body control modules, and 48 V mild hybrid DC-DC converters requiring stable component supply, long-term lifecycle assurance, and automotive-grade traceability.

Supply support for DMTH4004SCTB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power, signal integrity, and protection solutions for automotive, industrial, and computing markets.

DMTH4004SCTB-13 belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-current, high-temperature switching in engine control, chassis, and electrified vehicle subsystems-prioritizing ruggedness, thermal stability, and AEC-Q101 compliance.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH4004SCTB-13 maintains 100 A continuous drain current at T_C = +100°C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and low R_DS(ON) temperature coefficient, enabling full-rated current even in high-ambient environments without derating.

Is the TO263AB package lead-free and RoHS compliant?

Yes-the DMTH4004SCTB-13 uses matte tin annealed over copper leadframe and conforms to EU Directive 2011/65/EU (RoHS 2), with bromine and chlorine content below 900 ppm each and antimony below 1000 ppm, meeting Diodes Incorporated's "Green" device definition.

Does this MOSFET include an integrated body diode, and what are its characteristics?

Yes-it features a monolithic body diode with V_SD = 1.3 V at 100 A and reverse recovery time t_RR = 52.4 ns at I_F = 50 A and di/dt = 100 A/µs. The diode is rated for 100 A continuous forward current (I_S) and supports synchronous rectification in buck or LLC topologies.

How does the 100% UIS rating impact system-level design?

The 100% unclamped inductive switching qualification (I_AS = 45 A, E_AS = 200 mJ) means the device can safely absorb inductive energy without external clamping components in solenoid, relay, or motor phase-leg applications-reducing BOM count, PCB area, and failure modes associated with snubber networks.

DMTH4004SCTB-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 68.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4305 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 4.7W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263

DMTH4004SCTB-13 FAQ

1.How can I place an order for DMTH4004SCTB-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH4004SCTB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH4004SCTB-13 reliable?

The price and inventory of DMTH4004SCTB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH4004SCTB-13 is usually 5 days.

3.What payment methods are accepted for DMTH4004SCTB-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH4004SCTB-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH4004SCTB-13?

DMTH4004SCTB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH4004SCTB-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH4004SCTB-13?

For technical support, including DMTH4004SCTB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH4004SCTB-13 requirements.

6.How does Aetrix verify that DMTH4004SCTB-13 is sourced from the original manufacturer or authorized distributors?

All DMTH4004SCTB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH4004SCTB-13 meets industry standards.

7.What is the process for return or replacement of DMTH4004SCTB-13?

All DMTH4004SCTB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH4004SCTB-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH4004SCTB-13 part is unused and in its original packaging.

Return procedure for DMTH4004SCTB-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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