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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH4004SCTBQ-13

Name: DMTH4004SCTBQ-13
Brand: Diodes Incorporated
SKU: DMTH4004SCTBQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH4004SCTBQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: DMTH4004SCTBQ-13.pdf

Description:: MOSFET N-CH 40V 100A TO263AB

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Product details

Overview

DMTH4004SCTBQ-13 from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in TO263AB (D2PAK) package, rated for 40V V_DSS, 3 mΩ R_DS(ON) @ 10V V_GS, 68.6 nC Q_g, and 100A continuous drain current at T_C = +25°C. It operates up to +175°C junction temperature and is designed for high-reliability automotive power switching in engine management and DC-DC converters.

For engineers reviewing the DMTH4004SCTBQ-13 datasheet, DMTH4004SCTBQ-13 pinout, DMTH4004SCTBQ-13 application, or DMTH4004SCTBQ-13 equivalent, key selection criteria include its low R_DS(ON) at high temperature, robust unclamped inductive switching rating (E_AS = 200 mJ), AEC-Q101 qualification, PPAP support, and thermal resistance R_θJC = 1.1 °C/W.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction and switching losses in high-current automotive power stages. Its gate threshold voltage (2–4 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers, while its 100% UIS-tested ruggedness supports reliable operation under transient overloads in motor control and load-switching circuits.

The device integrates a fast, low-V_SD body diode (1.3 V @ 100 A) with t_RR = 52.4 ns and Q_RR = 78.2 nC, enabling efficient synchronous rectification and freewheeling in buck and half-bridge topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche onset; suitable for 24 V automotive systems with transient margin.
R_DS(ON)	2.5–3 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 100 A, critical for thermally constrained engine bay layouts.
Q_g	68.6 nC - Determines gate drive energy requirement; supports efficient 100 kHz+ switching in DC-DC converters.
I_D (continuous)	100 A @ T_C = +25°C - Package-limited current handling; requires exposed pad soldering and heatsinking for full rating.
T_J max	+175°C - Enables operation in under-hood environments where ambient exceeds +125°C without derating.
E_AS	200 mJ - Confirmed unclamped inductive switching capability ensures robustness against load dump and inductive kickback.
R_θJC	1.1 °C/W - Low junction-to-case thermal resistance allows direct thermal coupling to heatsink via exposed drain pad.

Pinout & Package

Package: TO263AB (D2PAK), surface-mount with exposed drain pad for thermal and electrical connection. Molded green compound, UL 94V-0 rated, matte tin annealed terminals.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Exposed copper pad electrically connected to drain; must be soldered to PCB copper pour for thermal and current integrity.
Source	Power return reference node	Low-inductance source connection essential for minimizing switching loop area and voltage overshoot during turn-off.
Gate	Control input for channel modulation	High-impedance terminal requiring low-impedance driver (<3.5 Ω series R) to achieve t_F = 8.1 ns and minimize Miller-induced shoot-through risk.

Key Features

Feature	Design Value
AEC-Q101 qualified & PPAP capable	Validated reliability for automotive production; includes stress testing, failure analysis, and traceable lot documentation.
100% UIS tested	Each unit verified for unclamped inductive switching up to 200 mJ-eliminates need for external snubbers in motor drive applications.
Low R_DS(ON) over temperature	R_DS(ON) increases only ~1.8× from 25°C to 175°C (per Fig. 6), maintaining efficiency in hot under-hood conditions.
Green, RoHS-compliant construction	Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb); compliant with EU Directive 2011/65/EU.
Optimized dynamic parameters	C_iss/C_oss/C_rss ratio of 4305/1441/102 pF enables stable gate drive with minimal oscillation in high-dV/dt environments.

Applications

Engine Management Systems

Body Control Modules

Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems with 12–24 V supply and 10–20 A peak loads.

IC Role / Device Role / Timing Role: Power switch controlling solenoid actuation timing with sub-millisecond on/off transitions.

Use Value: Low Q_g and fast t_F = 8.1 ns enable precise pulse-width control; 175°C rating ensures reliability near exhaust manifolds.

Use Scenario: Load switch for HVAC blower motors, power seats, and lighting modules in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: High-current electronic fuse replacing mechanical relays; supports soft-start and current limiting via gate control.

Use Value: R_DS(ON) ≤ 3 mΩ reduces I²R heating during continuous 30–50 A operation; AEC-Q101 qualification guarantees field longevity.

DC-DC Converters

Start-Stop Battery Systems

Use Scenario: Synchronous rectifier in 40 V input, 5–12 V output buck converters for ADAS camera and radar ECUs.

IC Role / Device Role / Timing Role: Low-side switch conducting high average current with minimal forward voltage drop.

Use Value: V_SD = 1.3 V @ 100 A and Q_RR = 78.2 nC reduce reverse recovery losses; C_oss = 1441 pF minimizes capacitive switching loss.

Use Scenario: Main battery disconnect switch in 12 V micro-hybrid start-stop systems with regenerative braking energy recovery.

IC Role / Device Role / Timing Role: Bidirectional power path controller managing charge/discharge between starter battery and supercapacitor bank.

Use Value: 200 A pulsed current rating (I_DM) and E_AS = 200 mJ withstand repeated cranking transients and load dump surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 1.8 mΩ @ 10 V, 120 A ID, TO263AB; higher current but larger Q_g (95 nC) and no published UIS rating.	Better conduction efficiency at >80 A, but less suited for fast-switching or inductive-load-critical designs.	Select when lower R_DS(ON) dominates over switching loss and ruggedness requirements.
IXTP110N045T	45 V, 3.2 mΩ @ 10 V, 110 A ID, TO220AB; lower cost but non-AEC-Q101, max T_J = +175°C not validated for automotive.	Suitable for industrial DC-DC or UPS, but lacks PPAP documentation and automotive qualification evidence.	Select only for non-automotive applications where AEC-Q101 compliance is not required.

Compared with STL220N4F7AG and IXTP110N045T, DMTH4004SCTBQ-13 uniquely balances low R_DS(ON), industry-leading UIS ruggedness, and full AEC-Q101/PPAP support-making it the preferred choice for safety-critical automotive power stages where reliability and documentation are mandatory.

Availability

DMTH4004SCTBQ-13 is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and DC-DC converters requiring stable component supply across automotive production lifecycles.

Supply support for DMTH4004SCTBQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-temperature, high-reliability power switching in engine, chassis, and body electronics-emphasizing AEC-Q101 compliance, thermal robustness, and production traceability.

FAQ

What is the maximum allowable gate-source voltage for DMTH4004SCTBQ-13?

The absolute maximum V_GS is ±20 V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 10–12 V for optimal R_DS(ON) and safe margin below the 20 V limit, especially in noisy automotive environments.

Is the exposed drain pad electrically isolated from other terminals?

No-the exposed drain pad is internally connected to the MOSFET's drain terminal and serves as both the primary current path and thermal interface. It must be soldered to a large PCB copper area tied to the system ground or power rail, depending on circuit topology, and cannot be left floating or insulated.

Does DMTH4004SCTBQ-13 support paralleling for higher current capacity?

Yes-its positive temperature coefficient of R_DS(ON) (confirmed in Fig. 6 and Fig. 7) enables stable current sharing when multiple units are paralleled. However, matched gate drive layout (equal trace length/inductance) and thermal coupling are essential to prevent current imbalance and localized overheating.

What is the significance of the "Q" suffix in DMTH4004SCTBQ-13?

The "Q" denotes AEC-Q101 qualification per Diodes Incorporated's internal part numbering convention. It signifies that the device has undergone full automotive stress testing-including HTOL, TC, HAST, and UIS-and is supported by PPAP documentation, distinguishing it from industrial-grade variants without the Q suffix.

DMTH4004SCTBQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 68.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4305 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 4.7W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263

DMTH4004SCTBQ-13 FAQ

1.How can I place an order for DMTH4004SCTBQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH4004SCTBQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH4004SCTBQ-13 reliable?

The price and inventory of DMTH4004SCTBQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH4004SCTBQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH4004SCTBQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH4004SCTBQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH4004SCTBQ-13?

DMTH4004SCTBQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH4004SCTBQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH4004SCTBQ-13?

For technical support, including DMTH4004SCTBQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH4004SCTBQ-13 requirements.

6.How does Aetrix verify that DMTH4004SCTBQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH4004SCTBQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH4004SCTBQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH4004SCTBQ-13?

All DMTH4004SCTBQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH4004SCTBQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH4004SCTBQ-13 part is unused and in its original packaging.

Return procedure for DMTH4004SCTBQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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