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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH4004SK3-13

Name: DMTH4004SK3-13
Brand: Diodes Incorporated
SKU: DMTH4004SK3-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH4004SK3-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: DMTH4004SK3-13.pdf

Description:: MOSFET N-CH 40V 100A TO252

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Product details

Overview

DMTH4004SK3-13 from Diodes Incorporated is a 40V, 100A N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for continuous operation at +175°C junction temperature, with 3.2mΩ R_DS(ON) @ V_GS = 10V and 68.6nC total gate charge - optimized for high-current DC/DC converters and automotive body control modules.

For engineers reviewing the DMTH4004SK3-13 datasheet, DMTH4004SK3-13 pinout, DMTH4004SK3-13 application, or DMTH4004SK3-13 equivalent, key selection criteria include its AEC-Q101 qualification, low R_DS(ON) at high temperature, unclamped inductive switching rating, thermal resistance (R_θJC = 0.8°C/W), and TO252 drain-exposed pad layout compatibility.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve ultra-low on-resistance while maintaining fast switching performance. Its 100% UIS-tested ruggedness ensures reliable operation under inductive load transients common in automotive power distribution.

The device features a robust body diode with 52.4ns reverse recovery time and 78.2nC Q_RR, enabling efficient synchronous rectification and freewheeling in high-frequency buck converters up to 500kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40V - Maximum drain-source blocking voltage compatible with 12V/24V automotive systems and 36V industrial rails.
R_DS(ON) Max	3.2mΩ @ V_GS = 10V - Enables <1.5W conduction loss at 90A, critical for thermally constrained PCB layouts.
Q_g Typ	68.6nC - Supports efficient gate drive with standard 1A peak drivers; reduces switching loss in high-frequency operation.
I_D Continuous	100A @ T_C = +25°C - Sustains full-rated current when mounted on ≥25mm × 25mm 2oz copper pad per JEDEC standards.
T_J Max	+175°C - Qualified for under-hood automotive environments and high-ambient industrial motor drives.
R_θJC	0.8°C/W - Enables direct thermal coupling to heatsink via exposed drain pad, essential for high-power density designs.
E_AS	160mJ - Withstands single-pulse avalanche energy without failure, eliminating need for external snubbers in inductive switching.

Pinout & Package

Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Molded green compound, UL 94V-0 rated, lead-free and RoHS compliant.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main current path output / heat sink interface	Exposed metal pad - must be soldered to large copper area for thermal management and current return path.
G (Gate)	Control input for channel conduction	High-impedance MOS gate requiring low-inductance routing and RC damping to suppress ringing.
S (Source)	Reference node for gate drive and current sensing	Common source terminal; used for Kelvin sense or shunt-based current monitoring in precision control loops.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and body electronics per stress test requirements including HTOL, TC, HTRB.
100% UIS tested	Each unit screened for unclamped inductive switching robustness - eliminates field failures due to load dump or relay bounce.
Low R_DS(ON) at high T_J	R_DS(ON) increases only ~2.5× from 25°C to 175°C - maintains efficiency in sustained high-temp operation.
Green compound & finish	Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) - meets automotive OEM environmental mandates.
Optimized gate charge profile	Q_gd/Q_g ratio of 20.7% - balances Miller effect immunity and turn-on speed for stable hard-switching behavior.

Applications

Engine Management Systems

Body Control Modules

Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems operating at 12V nominal with 100ms pulse widths.

IC Role / Device Role / Timing Role: Power switch controlling solenoid actuation; requires fast turn-off to prevent dribble and precise current regulation during open-loop phases.

Use Value: Low Q_g and 175°C rating enable compact packaging near hot engine blocks while maintaining <1µs turn-off delay and <10mΩ effective on-resistance over lifetime.

Use Scenario: 24V HVAC blower motor control in premium vehicle cabins, with PWM frequency >20kHz to eliminate audible noise.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; handles bidirectional regenerative braking current and withstands battery reverse polarity events.

Use Value: 100% UIS rating and 160mJ E_AS eliminate need for external TVS clamping, reducing BOM count and board space by 35% vs. non-ruggedized alternatives.

Industrial DC/DC Converters

Server VRM Power Stages

Use Scenario: Primary-side synchronous rectifier in isolated 48V-to-12V telecom brick converters delivering up to 300W continuous output.

IC Role / Device Role / Timing Role: High-current, high-frequency switch operating at 300kHz with 50% duty cycle; demands minimal conduction and switching losses.

Use Value: 3.2mΩ R_DS(ON) and 68.6nC Q_g yield 95.2% peak efficiency at 100A load, exceeding 80 PLUS Titanium requirements.

Use Scenario: Multiphase buck converter stage supplying CPU core voltage (0.8–1.2V) at up to 200A per phase in AI accelerator servers.

IC Role / Device Role / Timing Role: High-side switch in interleaved 3-phase topology; requires tight gate timing control and low thermal impedance for transient response.

Use Value: R_θJC = 0.8°C/W allows direct mounting to copper-backed heatsink, limiting ΔT_J-C to <15°C at 120A, ensuring stable V_GS threshold across load steps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(ON) = 2.2mΩ @ 10V but higher Q_g (105nC); TO263 package with larger footprint	Better conduction loss but slower switching; requires larger gate driver and heatsink area	Select when conduction loss dominates and layout space permits larger package
IXTP100N04T4	R_DS(ON) = 3.8mΩ @ 10V; TO220 package; no AEC-Q101 qualification	Lacks automotive qualification and UIS screening; lower thermal performance (R_θJC = 1.2°C/W)	Acceptable for cost-sensitive industrial DC/DC where reliability requirements are less stringent

Compared with STL220N4F7AG and IXTP100N04T4, DMTH4004SK3-13 delivers optimal balance of low R_DS(ON), moderate Q_g, AEC-Q101 compliance, and TO252 thermal efficiency - making it the preferred choice for space-constrained, high-reliability automotive and server power stages.

Availability

DMTH4004SK3-13 is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and industrial DC/DC converters requiring stable component supply, long-term lifecycle support, and automotive-grade traceability.

Supply support for DMTH4004SK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-current, high-temperature switching in engine control units, ADAS subsystems, and electrified vehicle power distribution.

FAQ

What is the maximum continuous drain current for DMTH4004SK3-13 at 100°C case temperature?

The datasheet specifies 100A continuous drain current at T_C = +100°C (Note 9), confirmed by package-limited rating and thermal derating curves. This value assumes proper PCB copper area (25mm × 25mm 2oz) and still-air conditions. At higher ambient temperatures or reduced copper, current must be reduced per R_θJC = 0.8°C/W and T_J(max) = 175°C limits.

Is DMTH4004SK3-13 suitable for synchronous rectification in a 48V-to-12V isolated DC/DC converter?

Yes - its 3.2mΩ R_DS(ON) at 10V gate drive, 52.4ns body diode t_RR, and 78.2nC Q_RR support efficient synchronous rectification up to 300kHz. The low Q_gd/Q_g ratio minimizes shoot-through risk, and the 175°C rating accommodates elevated temperatures in high-density power bricks.

Does DMTH4004SK3-13 require a gate resistor for stability in hard-switching applications?

Yes - a 3.5Ω gate resistor is used in the datasheet's dynamic characterization (t_D(ON), t_R). For hard-switching above 100kHz, a 2–5Ω series resistor is recommended to dampen gate oscillation and reduce EMI, especially given its 0.77Ω intrinsic gate resistance and high dV/dt capability (C_iss = 4305pF).

How does the TO252 package of DMTH4004SK3-13 compare thermally to TO263 in high-power applications?

The TO252 exposes the drain pad directly to PCB copper, achieving R_θJC = 0.8°C/W - comparable to many TO263 devices. However, TO252 has lower absolute power dissipation (180W max at T_C = 25°C) than TO263 due to smaller copper area. For >150W continuous, TO263 offers superior thermal headroom, but TO252 provides better cost and footprint efficiency below that threshold.

DMTH4004SK3-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 68.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4305 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.9W (Ta), 180W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252-3

DMTH4004SK3-13 FAQ

1.How can I place an order for DMTH4004SK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH4004SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH4004SK3-13 reliable?

The price and inventory of DMTH4004SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH4004SK3-13 is usually 5 days.

3.What payment methods are accepted for DMTH4004SK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH4004SK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH4004SK3-13?

DMTH4004SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH4004SK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH4004SK3-13?

For technical support, including DMTH4004SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH4004SK3-13 requirements.

6.How does Aetrix verify that DMTH4004SK3-13 is sourced from the original manufacturer or authorized distributors?

All DMTH4004SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH4004SK3-13 meets industry standards.

7.What is the process for return or replacement of DMTH4004SK3-13?

All DMTH4004SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH4004SK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH4004SK3-13 part is unused and in its original packaging.

Return procedure for DMTH4004SK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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