Diodes Incorporated DMTH4007LK3-13

Overview

DMTH4007LK3-13 from Diodes Incorporated is a 40V, 70A N-channel enhancement-mode MOSFET in TO252 (DPAK) package, featuring 7.3mΩ R_DS(ON) at V_GS = 10V and 9.8mΩ at 4.5V, qualified to AEC-Q101, rated for 175°C operation, and optimized for high-efficiency DC-DC converters and automotive power management.

For engineers reviewing the DMTH4007LK3-13 datasheet, DMTH4007LK3-13 pinout, DMTH4007LK3-13 application, or DMTH4007LK3-13 equivalent, key selection criteria include R_DS(ON) at low gate drive, thermal resistance (R_θJC = 2.5°C/W), SOA robustness, body diode recovery (t_RR = 30.6ns), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(ON) while maintaining fast switching via minimized Q_gd × R_DS(ON) figure-of-merit (FOM). Its 175°C maximum junction temperature and thermally enhanced TO252 package support high-power-density designs in constrained thermal environments.

The device integrates a robust intrinsic body diode with 80A continuous forward current rating and 28.1nC reverse recovery charge, enabling synchronous rectification and freewheeling in buck converters without external diode supplementation.

Key Specifications

Pinout & Package

Package: TO252 (DPAK), surface-mount, thermally enhanced with exposed drain pad for direct PCB heat sinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH4007LK3Q-13, the base part lacks automotive-specific documentation but shares identical performance and reliability; versus IPB070N15N3G, it trades voltage headroom for superior thermal efficiency and smaller board area in 40V applications.

Availability

DMTH4007LK3-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial point-of-load supplies, and LED backlight drivers requiring stable component supply, extended temperature operation, and AEC-Q101-aligned reliability.

Supply support for DMTH4007LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

This MOSFET belongs to Diodes' "Advanced Power" product line, engineered specifically for high-current, high-temperature switching applications where low R_DS(ON), fast body diode recovery, and AEC-Q101 compliance are essential design requirements.

FAQ

What is the maximum gate-source voltage rating for DMTH4007LK3-13?

The absolute maximum gate-source voltage is ±20V. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive circuits should be clamped to ≤±15V, especially during transients or hot-plug events. The device's 1–3V threshold range ensures compatibility with standard 3.3V and 5V logic-level drivers without level-shifting.

Can DMTH4007LK3-13 be used in parallel configurations?

Yes, but only with careful layout and gate drive matching. Its positive temperature coefficient for R_DS(ON) (confirmed in Figure 6 and 7) provides inherent current sharing stability above 25°C. To ensure balanced conduction, use identical gate resistors, symmetrical PCB trace lengths, and shared thermal vias to a common copper pour. Avoid paralleling more than two devices without individual current sensing.

Is the exposed drain pad electrically isolated from other terminals?

No-the exposed drain pad is electrically connected to Pin 3 (Drain) and must be soldered to a PCB copper area serving as both thermal sink and circuit node. It is not insulated; therefore, any copper pour connected to it becomes part of the high-side power path. Ensure adequate clearance to adjacent traces and components per IPC-2221B Class B requirements for 40V working voltage.

Does DMTH4007LK3-13 support 3.3V logic-level gate drive?

It conducts at 3.3V but not at rated R_DS(ON). At V_GS = 3.3V, typical R_DS(ON) rises to ~25mΩ (extrapolated from Figure 4), limiting continuous current to ~30A before thermal saturation. For full 70A capability, ≥4.5V gate drive is required. Use with 3.3V microcontrollers is viable only in low-duty-cycle or low-current applications with active thermal monitoring.