Diodes Incorporated DMTH4007LPS-13

Overview

DMTH4007LPS-13 from Diodes Incorporated is a 40V, 85A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, featuring 6.5mΩ R_DS(ON) at V_GS = 10V, rated for +175°C operation, and optimized for high-efficiency DC-DC converters and notebook battery power management.

For engineers reviewing the DMTH4007LPS-13 datasheet, DMTH4007LPS-13 pinout, DMTH4007LPS-13 application, or DMTH4007LPS-13 equivalent, key selection criteria include its low R_DS(ON) at 4.5V (9.8mΩ), 100% unclamped inductive switching rating, thermally efficient exposed-drain package, and automotive-compliant variant (DMTH4007LPSQ).

Technical Context

This MOSFET employs a trench-gate silicon process to achieve ultra-low on-resistance while maintaining fast switching speed (t_D(ON) = 5.4ns, t_D(OFF) = 16.2ns) and low gate charge (Q_g = 29.1nC at V_GS = 10V). Its body diode exhibits t_RR = 30.6ns and Q_RR = 28.1nC under 100A/μs di/dt.

The device is characterized for stable operation across -55°C to +175°C junction temperature, with R_DS(ON) normalized to 1.8× at 175°C (vs. 25°C) at V_GS = 10V, and features a robust 20mJ single-pulse avalanche energy rating (E_AS) at L = 0.1mH.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad for low R_θJC (1.8°C/W) and <1.1mm profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH4007SPS-13, the DMTH4007LPS-13 delivers 39% higher current capability and 28% lower thermal resistance via its larger PowerDI5060-8 footprint; versus IPB050N04LGATMA1, it trades 2.5mΩ lower R_DS(ON) for 13nC lower Q_g, favoring high-frequency, gate-drive-limited designs.

Availability

DMTH4007LPS-13 is available at Aetrix Electronics and suitable for notebook battery management, high-density DC-DC converters, and industrial PLC output stages requiring stable component supply and long-term lifecycle support.

Supply support for DMTH4007LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

The DMTH4007LPS belongs to Diodes' Power MOSFET product line, engineered for high-current, high-temperature switching in compact power conversion and load management systems where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH4007LPS-13 supports 60A continuous drain current at T_C = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the 1.8°C/W R_θJC and junction-to-case power dissipation ceiling, not package current-carrying capacity alone.

Does this MOSFET require a gate resistor for safe operation in hard-switched applications?

A gate resistor is recommended to control dV/dt and prevent spurious turn-on due to Miller capacitance coupling. With C_iss = 1895pF and Q_gd = 3.5nC, a 3Ω resistor (as used in the datasheet's switching time test) provides optimal trade-off between switching speed and ringing suppression in 30V, 20A conditions.

Can the exposed drain pad be left floating on the PCB?

No - the exposed drain pad is electrically and thermally connected to all drain terminals and must be soldered to a minimum 1-inch² copper pour on the PCB's inner or bottom layer. Leaving it unconnected violates the thermal specification and reduces power handling from 83.3W to 2.7W, risking thermal runaway under load.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes - the body diode has characterized t_RR = 30.6ns and Q_RR = 28.1nC at 20A, enabling use in synchronous rectification up to ~1MHz. However, its V_SD = 1.2V at 20A results in higher forward loss than an external Schottky; best practice is to minimize conduction time via precise gate timing.