Diodes Incorporated DMTH4007SPDQ-13

Overview

DMTH4007SPDQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8 (Type C) package, rated for 40V V_DSS, 8.6mΩ R_DS(ON) at V_GS = 10V, and 48A continuous drain current at T_C = +25°C. It is AEC-Q101 qualified, PPAP-capable, and designed for automotive power-management functions including DC-DC converters and backlighting.

For engineers reviewing the DMTH4007SPDQ-13 datasheet, DMTH4007SPDQ-13 pinout, DMTH4007SPDQ-13 application, or DMTH4007SPDQ-13 equivalent, key selection criteria include its 175°C junction rating, 100% production-tested UIS robustness, low gate charge (41.9nC), and dual-channel layout enabling space-efficient half-bridge or synchronous rectifier topologies.

Technical Context

This dual N-channel MOSFET integrates two matched silicon die in a thermally optimized PowerDI5060-8 package with exposed drain pads for low R_θJC (4°C/W). Its gate threshold voltage (2–4V) supports standard 3.3V/5V/10V logic-level drive, and its low input capacitance (2026pF) and fast switching (t_r = 11.5ns, t_f = 8.8ns) enable high-frequency DC-DC operation up to 1MHz.

The device features integrated body diodes with t_RR = 29.9ns and Q_RR = 23nC, supporting synchronous rectification and reducing reverse-recovery losses. Its 100% UIS-tested ruggedness (IAS = 20A, EAS = 20mJ) ensures reliability under inductive load transients common in automotive solenoid and motor-control circuits.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (Type C), surface-mount, thermally enhanced with exposed dual drain pads. Molded green compound (UL 94V-0), matte tin–annealed copper leadframe, MSL Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Compared with DMTH4007SPDQ-13, the -7 variant offers identical performance with different reel quantity for logistics optimization, while the DMTH4007LKQ-13 trades thermal capability and current rating for 44% smaller footprint-making the -13 optimal for thermally demanding, high-current automotive power stages.

Availability

DMTH4007SPDQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and engine control unit power management requiring stable component supply across extended product lifecycles.

Supply support for DMTH4007SPDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMTH4007SPDQ belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for automotive power conversion and load switching where thermal resilience, transient robustness, and long-term supply stability are mandatory.

FAQ

What is the maximum allowable PCB copper area for thermal relief when mounting DMTH4007SPDQ-13?

The datasheet specifies thermal testing on FR-4 with 2oz copper and a 1-inch square bottom-layer copper plate. For optimal R_θJA ≤57°C/W, use ≥25mm² exposed copper under each drain pad, connected via ≥4 thermal vias (0.3mm diameter, filled) to internal ground planes. Larger copper areas further reduce junction temperature but yield diminishing returns beyond 100mm² per pad.

Does DMTH4007SPDQ-13 support 3.3V logic-level gate drive?

Yes-its V_GS(TH) range (2–4V) ensures turn-on at 3.3V, but R_DS(ON) increases to ~15mΩ at V_GS = 4.5V and ~25mΩ at V_GS = 3.3V. For full 8.6mΩ performance, 10V drive is required. Use gate drivers with ≥10V output or level-shifted PWM signals in high-efficiency designs.

How is the dual-channel isolation implemented in PowerDI5060-8 (Type C)?

The package contains two fully isolated silicon die with separate source terminals (S1, S2) and drain terminals (D1, D2), each bonded to independent exposed copper pads on the bottom. No internal connection exists between channels-S1 and S2 are electrically isolated, enabling true floating-source operation such as high-side switching or isolated half-bridges without external isolation components.

What does "100% UIS tested in production" mean for DMTH4007SPDQ-13?

Every production unit undergoes unclamped inductive switching stress at I_AS = 20A and L = 0.1mH, verifying avalanche energy handling (EAS = 20mJ). This ensures no latent defects survive final test, directly correlating to field reliability in automotive inductive load applications like fuel injectors, where repetitive 60V+ transients occur during normal operation.