Diodes Incorporated DMTH4007SPS-13

Overview

DMTH4007SPS-13 from Diodes Incorporated is a 40V, 100A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for +175°C operation, with R_DS(ON) = 4.9 mΩ (typ) at V_GS = 10V and fast switching (t_F = 8.8 ns), designed for high-efficiency notebook battery power management and load-switching circuits.

For engineers reviewing the DMTH4007SPS-13 datasheet, DMTH4007SPS-13 pinout, DMTH4007SPS-13 application, or DMTH4007SPS-13 equivalent, key selection criteria include thermal robustness at elevated ambient temperatures, low conduction loss under high-current DC loads, gate charge optimization for synchronous buck stages, and JEDEC-qualified reliability for industrial and computing power rails.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for simultaneous low R_DS(ON) and minimized output capacitance (C_oss = 790 pF), enabling high-frequency DC-DC conversion with reduced switching losses. Its thermally enhanced PowerDI5060-8 package features an exposed drain pad with R_θJC = 1.1 °C/W, supporting high-power density layouts without external heatsinks.

The device integrates a robust body diode with t_RR = 29.9 ns and Q_RR = 23 nC, suitable for synchronous rectification and bidirectional current handling in battery protection IC interfaces. Gate threshold voltage (V_GS(TH) = 2–4 V) ensures stable turn-on with standard 3.3V/5V logic-level drivers.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - Thermally optimized 8-pin surface-mount package with exposed drain pad (pins 2–5 and 7–8), 1.0 mm profile, RoHS-compliant matte tin finish over copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH4007SPSQ-13, the -13 variant offers identical performance at lower qualification cost for non-automotive use; versus IPB017N10N5ATMA1, it delivers superior power density and gate drive efficiency in 40V-class applications where voltage margin is constrained.

Availability

DMTH4007SPS-13 is available at Aetrix Electronics and suitable for notebook battery management, high-density DC-DC converters, and industrial hot-swap controllers requiring stable component supply across multi-year production cycles.

Supply support for DMTH4007SPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design centers across Asia, Europe, and the U.S., serving computing, industrial, and consumer markets.

This MOSFET belongs to Diodes' PowerDI® high-current logic-level portfolio, engineered specifically for compact, thermally demanding power management in portable and embedded systems where R_DS(ON), switching speed, and package thermal performance are co-optimized.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH4007SPS-13 supports 77 A continuous drain current at T_C = +100°C, per the datasheet's thermal derating curve. This value reflects real-world thermal resistance (R_θJC = 1.1 °C/W) and safe junction temperature limits up to +175°C, making it suitable for sustained high-load operation in thermally constrained PCB layouts.

Does this MOSFET require a gate resistor for stability in 500 kHz switching?

Yes - a 3 Ω gate resistor is used in the datasheet's switching time test conditions (t_D(ON), t_R, etc.) to dampen ringing caused by low R_g (0.46 Ω) and parasitic inductance. For 500 kHz operation, a 2.2–4.7 Ω non-inductive resistor is recommended to balance switching speed and EMI control without compromising gate drive strength.

Can DMTH4007SPS-13 be used in high-side switch configurations?

Yes - its V_GSS rating of ±20 V and V_DS = 40 V allow bootstrap gate drive in high-side applications. However, the source terminal (Pin 6) must be referenced to the switching node, and gate drive voltage must exceed V_GS(TH) (2–4 V) by sufficient margin (≥8 V) to ensure full enhancement under load-induced source rise.

Is the PowerDI5060-8 package compatible with standard reflow profiles?

Yes - the package is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 60 seconds). The 0.097 g mass and 1.0 mm profile ensure uniform heating; recommended pad layout matches Diodes' published footprint (X1 = 4.100 mm, Y2 = 1.020 mm) for optimal solder joint reliability.