Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMTH4007SPSQ-13

Part No.:
DMTH4007SPSQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMTH4007SPSQ-13.pdf
Description:
MOSFET N-CH 40V 15.7A PWRDI5060
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,491

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMTH4007SPSQ from Diodes Incorporated is a 40V, 100A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, qualified to AEC-Q101 and rated for +175°C operation. It delivers 7.6mΩ RDS(ON) at VGS = 10V and supports high-current DC-DC converters and automotive motor control with low conduction loss and fast switching.

For engineers reviewing the DMTH4007SPSQ datasheet, DMTH4007SPSQ pinout, DMTH4007SPSQ application, or DMTH4007SPSQ equivalent, this page provides verified thermal performance data, AEC-Q101 qualification status, junction-to-case thermal resistance (1.1°C/W), body diode recovery metrics (tRR = 29.9ns), and PowerDI5060-8 footprint compatibility details.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low RDS(ON) and minimized gate charge (Qg = 41.9nC), enabling high-efficiency synchronous rectification in 12V/48V automotive power systems. Its thermally enhanced PowerDI5060-8 package features an exposed drain pad for direct PCB heat sinking.

The device integrates a robust intrinsic body diode with 100A continuous forward current rating and 23nC reverse recovery charge (QRR), supporting hard-switched and resonant topologies. Gate threshold voltage (2–4V) ensures stable turn-on across -55°C to +175°C operating range under PPAP-controlled manufacturing.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 40V - Maximum blocking voltage for 12V/48V automotive bus protection and DC-DC primary-side switching.
RDS(ON) Max 7.6mΩ @ VGS = 10V - Enables ≤0.76W conduction loss at 100A, critical for high-current power stages.
ID Continuous 100A @ TC = +25°C - Package-limited current capacity requiring direct heatsinking via exposed drain pad.
RθJC 1.1°C/W - Junction-to-case thermal resistance enables >100W power dissipation with minimal temperature rise under forced cooling.
tRR 29.9ns - Fast body diode recovery reduces switching losses and EMI in buck and half-bridge configurations.
Qg 41.9nC - Total gate charge determines driver strength requirement for <15ns turn-on delay and 11.5ns rise time.
TJ Max +175°C - Extended junction temperature rating supports under-hood applications without derating at ambient up to +125°C.

Pinout & Package

PowerDI5060-8 is a thermally optimized 8-pin surface-mount package with dual exposed drain pads (pins 1–4 and 5–8) for low-inductance, high-current routing and efficient PCB heat transfer. The package height is <1.1mm, supporting thin-profile automotive modules.

Pin/Terminal Circuit Role Design Meaning
1–4, 5–8 (Drain) Power Drain Terminal (Dual Exposed Pads) Parallel-connected drain terminals form a single low-impedance thermal and current path to PCB copper; requires full-solder coverage for RθJC = 1.1°C/W performance.
6 (Source) Source Connection Primary source terminal for low-side switching; connects to ground plane with minimal loop inductance to reduce voltage spikes during dI/dt transients.
7 (Gate) Control Input High-impedance MOSFET gate requiring <1.4Ω series resistance to damp ringing; compatible with 3.3V/5V logic-level drivers due to 2–4V VGS(TH).

Key Features

Feature Design Value
AEC-Q101 Qualified + PPAP Capable Manufactured in IATF 16949-certified facilities with full change control documentation for automotive safety-critical designs.
Thermally Enhanced PowerDI5060-8 Exposed dual-drain pad structure achieves 1.1°C/W RθJC, enabling 136W power dissipation at TC = +25°C without external heatsink.
Low Qgd/Qgs Ratio 11.5nC / 10nC = 1.15 - Minimizes Miller effect, improving noise immunity and enabling stable operation in high-dV/dt environments.
Green, Halogen-Free Construction <900ppm Br, <900ppm Cl, <1000ppm Sb - Complies with automotive environmental standards including RoHS 3 and ELV directives.
Fast Body Diode Recovery tRR = 29.9ns, QRR = 23nC - Reduces cross-conduction loss and EMI in synchronous rectifiers and H-bridge motor drives.

Applications

Automotive DC-DC Converters Electric Power Steering (EPS)

Use Scenario: 48V-to-12V bidirectional buck-boost converter in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side switch handling continuous 80A load with <10μs switching transitions.

Use Value: 7.6mΩ RDS(ON) limits conduction loss to <0.5W at 80A, while 1.1°C/W RθJC maintains TJ < 150°C under full-load conditions.

Use Scenario: Three-phase inverter driving 1.5kW brushless DC motor in column-assist EPS system.

IC Role / Device Role / Timing Role: Low-side switch in six-pack configuration with 20kHz PWM and 100A peak phase current.

Use Value: 29.9ns body diode recovery prevents shoot-through during dead-time commutation, reducing torque ripple by >15% versus standard MOSFETs.

On-Board Charger (OBC) PFC Stage 12V Battery Backup Systems

Use Scenario: Boost PFC switch in 6.6kW OBC front-end operating at 100kHz with 400V DC-link.

IC Role / Device Role / Timing Role: High-frequency switching element requiring low Coss (790pF) and Qg = 41.9nC for ZVS compatibility.

Use Value: 41.9nC total gate charge enables gate drive with <2W peak power, reducing driver IC thermal stress in compact OBC modules.

Use Scenario: Load switch isolating auxiliary 12V battery during engine start to prevent brownout in ADAS ECUs.

IC Role / Device Role / Timing Role: Single-pole high-current switch with controlled turn-on slew rate to limit inrush current.

Use Value: 2–4V gate threshold allows precise control using standard microcontroller GPIO, eliminating need for level-shifting circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4F7AG 40V, 220A, RDS(ON) = 1.6mΩ @ 10V; PowerFLAT 5x6 package; RθJC = 0.9°C/W. Higher current rating but larger footprint; requires more PCB area and higher gate drive current (Qg = 105nC). Select when >150A peak current is required and board space permits larger package; not drop-in due to different pinout and thermal pad layout.
IXTQ120N40P 400V, 120A, RDS(ON) = 12mΩ @ 10V; TO-264 package; RθJC = 0.35°C/W; non-AEC-Q101. Higher voltage rating unsuitable for 48V systems; through-hole mounting incompatible with automated SMT assembly. Only suitable for industrial 400V applications; lacks automotive qualification and SMT compatibility - avoid for automotive designs.

Compared with STL220N4F7AG and IXTQ120N40P, DMTH4007SPSQ offers optimal balance of AEC-Q101 compliance, 100A capability, 7.6mΩ on-resistance, and SMT-ready PowerDI5060-8 packaging - making it uniquely suited for space-constrained, thermally demanding automotive power stages where qualification and manufacturability are mandatory.

Availability

DMTH4007SPSQ is available at Aetrix Electronics and suitable for automotive power management, DC-DC converters, and motor control applications requiring stable component supply, AEC-Q101 traceability, and long-term production continuity.

Supply support for DMTH4007SPSQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and IATF 16949 certifications.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-temperature, high-current automotive subsystems including EPS, OBC, and 48V DC-DC conversion where AEC-Q101 compliance and thermal robustness are essential.

FAQ

Is DMTH4007SPSQ qualified for automotive use?

Yes, DMTH4007SPSQ is fully AEC-Q101 qualified and manufactured in IATF 16949-certified facilities. It supports PPAP documentation and meets automotive change control requirements, including traceability to wafer lot and process validation for under-hood applications up to +175°C junction temperature.

What is the recommended PCB layout for thermal performance?

Maximize copper area under the dual exposed drain pads (pins 1–4 and 5–8) using ≥2oz copper with thermal vias to inner ground/power planes. Maintain ≥1.27mm clearance between gate (pin 7) and high-dV/dt nodes. Follow Diodes' suggested pad layout (D1 = 4.90mm, E1 = 5.80mm) to achieve RθJC = 1.1°C/W.

Can DMTH4007SPSQ be driven directly by a 3.3V microcontroller?

No - its gate threshold voltage range is 2–4V, and full enhancement requires ≥10V for 7.6mΩ RDS(ON). A dedicated gate driver (e.g., TC4427) is required to deliver sufficient peak current (≥2A) and maintain VGS ≥ 10V under load; 3.3V logic alone cannot ensure reliable saturation.

Does this MOSFET include integrated ESD protection?

No integrated ESD protection is specified. The device has ±20V gate-source voltage rating but relies on external TVS diodes or RC snubbers on gate and drain lines for system-level ESD robustness per ISO 10605. Layout best practices include short gate traces and local decoupling near the source terminal.

DMTH4007SPSQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
15.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
7.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
41.9 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2082 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.8W (Ta), 136W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8

DMTH4007SPSQ-13 FAQ

1.How can I place an order for DMTH4007SPSQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH4007SPSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH4007SPSQ-13 reliable?

The price and inventory of DMTH4007SPSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH4007SPSQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH4007SPSQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH4007SPSQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH4007SPSQ-13?

DMTH4007SPSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH4007SPSQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH4007SPSQ-13?

For technical support, including DMTH4007SPSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH4007SPSQ-13 requirements.

6.How does Aetrix verify that DMTH4007SPSQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH4007SPSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH4007SPSQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH4007SPSQ-13?

All DMTH4007SPSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH4007SPSQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH4007SPSQ-13 part is unused and in its original packaging.

Return procedure for DMTH4007SPSQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH4007SPSQ-13 Tags

  • DMTH4007SPSQ-13
  • DMTH4007SPSQ-13 PDF
  • DMTH4007SPSQ-13 Datasheet
  • DMTH4007SPSQ-13 Specifications
  • DMTH4007SPSQ-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMTH4007SPSQ-13
  • Buy DMTH4007SPSQ-13
  • DMTH4007SPSQ-13 Price
  • DMTH4007SPSQ-13 Distributor
  • DMTH4007SPSQ-13 Supplier
  • DMTH4007SPSQ-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER