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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH4007SPSWQ-13

Name: DMTH4007SPSWQ-13
Brand: Diodes Incorporated
SKU: DMTH4007SPSWQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH4007SPSWQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMTH4007SPSWQ-13.pdf

Description:: MOSFET BVDSS: 31V~40V POWERDI506

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Product details

Overview

DMTH4007SPSWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 40V N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, delivering 7.6 mΩ R_DS(ON) @ V_GS = 10 V, 100 A continuous drain current at T_C = +25°C, and rated for operation up to +175°C junction temperature - designed for high-reliability automotive power management, DC-DC converters, and motor control circuits.

For engineers reviewing the DMTH4007SPSWQ-13 datasheet, DMTH4007SPSWQ-13 pinout, DMTH4007SPSWQ-13 application, or DMTH4007SPSWQ-13 equivalent, this part supports thermally demanding automotive subsystems requiring low conduction loss, fast switching (t_F = 8.8 ns), and robust body diode performance (Q_RR = 23 nC) under high dI/dt conditions.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) and minimized gate charge (Q_g = 41.9 nC), enabling high-efficiency synchronous rectification and PWM-driven loads. Its PowerDI5060-8/SWP package features an exposed drain pad for direct thermal coupling to PCB copper, achieving R_θJC = 1.1 °C/W.

The device integrates a fast, low-loss intrinsic body diode with t_RR = 29.9 ns and Q_RR = 23 nC at IF = 20 A / dI/dt = 100 A/μs, supporting bidirectional energy recovery in H-bridge and regenerative braking topologies without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Supports 12 V and 24 V automotive battery rails with margin against load-dump transients.
R_DS(ON) Max	7.6 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 60 A, critical for compact DC-DC phase legs.
I_D Continuous	100 A @ T_C = +25°C - Sustains high-current motor drive pulses without derating when mounted on ≥1 in² 2 oz copper.
T_J Max	+175°C - Certified for under-hood environments including engine control units and transmission modules.
Q_g	41.9 nC - Reduces gate driver power demand and enables >500 kHz switching in high-frequency buck converters.
t_F	8.8 ns - Limits switching transition time, minimizing overlap loss in half-bridge configurations.
E_AS	60 mJ - Withstands repetitive inductive turn-off energy in solenoid and actuator drivers without avalanche failure.

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 5.15 mm × 6.40 mm × 1.10 mm max height. UL 94V-0 molded compound; matte tin annealed terminals.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (S)	Source	Low-side reference node; tied to ground plane or current-sense resistor for accurate shunt monitoring.
Pins 2–5, 7–8 (D)	Drain	Parallel-connected drain terminals forming primary current path and thermal interface to PCB copper pour.
Pin 6 (G)	Gate	Control input; requires <1.4 Ω gate resistance to suppress ringing during 100 A switching transitions.
Exposed Pad (D)	Drain (Thermal)	Primary heat extraction path; must be soldered to ≥1 in² 2 oz copper for rated 136 W power dissipation.

Key Features

Feature	Design Value
AEC-Q101 qualified & PPAP capable	Validated for automotive production use with full change control and IATF 16949 manufacturing traceability.
R_DS(ON) = 4.9 mΩ typ @ V_GS = 10 V	Reduces conduction losses by >35% vs. legacy 40 V MOSFETs, improving efficiency in 12 V starter-generator systems.
Body diode t_RR = 29.9 ns	Enables zero-voltage switching (ZVS) in resonant LLC converters without external diode replacement.
0.097 g mass & <1.1 mm profile	Meets space-constrained requirements in ADAS camera modules and electronic power steering ECUs.
Halogen- and antimony-free "Green" construction	Complies with EU RoHS 3 (2015/863/EU) and automotive ELV Directive for end-of-life recyclability.

Applications

Engine Control Unit (ECU)

Electric Power Steering (EPS)

Use Scenario: High-side switch for fuel injector drivers operating at 12 V battery rail with 10 ms pulse widths.

IC Role / Device Role / Timing Role: N-channel MOSFET used as low-loss, high-speed switching element controlling solenoid activation timing.

Use Value: 7.6 mΩ R_DS(ON) limits voltage drop to <0.76 V at 100 A peak, preserving injector coil energization accuracy across -40°C to +175°C ambient.

Use Scenario: Half-bridge output stage in 24 V EPS motor controller handling bidirectional torque commands.

IC Role / Device Role / Timing Role: Low-side switch managing PWM-controlled current flow through brushless motor windings.

Use Value: Fast 8.8 ns fall time and 23 nC Q_RR minimize dead-time losses and prevent shoot-through during direction reversal.

48 V Mild Hybrid DC-DC Converter

Automotive HVAC Blower Motor Driver

Use Scenario: Synchronous rectifier in 48 V-to-12 V buck converter supplying infotainment and ADAS subsystems.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to reduce conduction loss and improve thermal margin.

Use Value: 41.9 nC total gate charge allows efficient gate driving at 300–500 kHz, increasing conversion efficiency by 2.1% over diode-based designs.

Use Scenario: High-current PWM switch regulating airflow in cabin HVAC system using 12 V BLDC motor.

IC Role / Device Role / Timing Role: N-channel MOSFET in inverter leg delivering variable speed control via six-step commutation.

Use Value: +175°C rating ensures reliable operation adjacent to heater core; 60 mJ E_AS withstands inductive kickback during abrupt fan stop commands.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(ON) = 4.7 mΩ @ 10 V; TO-263-7 package; higher Q_g = 58 nC	Larger footprint (10.0 × 15.8 mm); requires heatsink for >60 A operation	Select when board space permits larger package and lower R_DS(ON) justifies added gate drive power.
IPB037N04LGATMA1	R_DS(ON) = 3.7 mΩ @ 10 V; PG-HSOF-8 package; R_θJC = 0.9 K/W	Higher thermal performance but non-AEC-Q101 qualified; not PPAP-capable	Select only for non-automotive industrial applications where qualification is not required.

Compared with STL220N4F7AG and IPB037N04LGATMA1, DMTH4007SPSWQ-13 offers optimal balance of ultra-low profile (1.1 mm), AEC-Q101 compliance, and validated 100 A capability in a compact 5.15 × 6.40 mm footprint - making it preferred for space- and qualification-constrained automotive modules.

Availability

DMTH4007SPSWQ-13 is available at Aetrix Electronics and suitable for automotive power management, DC-DC converters, and motor controls requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMTH4007SPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101-compliant power switching in engine, chassis, and body electronics systems.

FAQ

What is the maximum allowable gate-source voltage for DMTH4007SPSWQ-13?

The absolute maximum V_GS rating is ±20 V per the datasheet's Maximum Ratings table. Operation beyond ±12 V risks permanent gate oxide damage, especially at elevated temperatures. Recommended drive voltage is 10 V for full R_DS(ON) optimization while maintaining safe margin below the limit.

Can DMTH4007SPSWQ-13 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(ON) (normalized resistance increases with junction temperature, per Figure 6) enables inherent current sharing. For stable parallel operation, match gate drive loop inductance and ensure symmetrical PCB layout with identical trace lengths and thermal vias to each device's exposed drain pad.

Is the body diode suitable for continuous freewheeling in high-frequency PWM applications?

Yes - the body diode is characterized for t_RR = 29.9 ns and Q_RR = 23 nC at IF = 20 A, enabling reliable freewheeling in 100–500 kHz motor drives. However, reverse recovery losses must be included in thermal calculations; PCB copper area under the exposed pad must accommodate combined MOSFET + diode dissipation.

Does DMTH4007SPSWQ-13 require special PCB layout considerations for thermal performance?

Yes - the exposed drain pad must be soldered to ≥1 in² of 2 oz copper with ≥6 thermal vias (0.3 mm diameter, spaced ≤2 mm apart) connecting to internal ground/power planes. The datasheet specifies R_θJC = 1.1 °C/W assumes this layout; omitting vias degrades thermal resistance by >40%, risking premature thermal shutdown at rated current.

DMTH4007SPSWQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 15.7A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2082 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMTH4007SPSWQ-13 FAQ

1.How can I place an order for DMTH4007SPSWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH4007SPSWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH4007SPSWQ-13 reliable?

The price and inventory of DMTH4007SPSWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH4007SPSWQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH4007SPSWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH4007SPSWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH4007SPSWQ-13?

DMTH4007SPSWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH4007SPSWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH4007SPSWQ-13?

For technical support, including DMTH4007SPSWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH4007SPSWQ-13 requirements.

6.How does Aetrix verify that DMTH4007SPSWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH4007SPSWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH4007SPSWQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH4007SPSWQ-13?

All DMTH4007SPSWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH4007SPSWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH4007SPSWQ-13 part is unused and in its original packaging.

Return procedure for DMTH4007SPSWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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