Diodes Incorporated DMTH4008LFDFW-13

Overview

DMTH4008LFDFW-13 from Diodes Incorporated is a 40V, N-channel enhancement-mode MOSFET in U-DFN2020-6 package, rated for continuous drain current of 11.6A at 25°C and 8.2A at 100°C, with R_DS(ON) of 11.5mΩ @ V_GS = 10V and 18mΩ @ V_GS = 4.5V, operating up to +175°C - deployed in automotive-grade DC-DC converters and LED backlighting power stages.

For engineers reviewing the DMTH4008LFDFW-13 datasheet, DMTH4008LFDFW-13 pinout, DMTH4008LFDFW-13 application, or DMTH4008LFDFW-13 equivalent, key selection criteria include high-temperature operation capability (+175°C), low-profile 0.6mm package, JEDEC-qualified reliability, and unclamped inductive switching (UIS) robustness for power-switching integrity.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for simultaneous low R_DS(ON) and fast switching performance, supporting high-frequency synchronous rectification in buck converters. Its 100% production-tested UIS rating (14.7A/32.4mJ, L = 0.3mH) ensures ruggedness against inductive transients in motor drive and power supply outputs.

The device features a thermally enhanced U-DFN2020-6/SWP (Type F) package with exposed drain pad, delivering R_θJC = 14.8°C/W and R_θJA = 64.5°C/W on 1-inch² copper - enabling compact, high-power-density designs without heatsinks in ambient temperatures up to +125°C.

Key Specifications

Pinout & Package

Package: U-DFN2020-6/SWP (Type F), 2.0mm × 2.0mm × 0.6mm, thermally enhanced with exposed drain pad (D). RoHS-compliant, halogen-free, matte tin annealed terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH4008LFDQ-7, the DMTH4008LFDFW-13 offers identical electrical performance at lower cost and simplified logistics for non-automotive programs; versus DMN3022LSD-13, it trades higher R_DS(ON) for superior thermal robustness and smaller size - critical in thermally constrained, high-voltage applications.

Availability

DMTH4008LFDFW-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and industrial motor control systems requiring stable component supply across multi-year production cycles.

Supply support for DMTH4008LFDFW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection devices for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' Automotive-Grade PowerFET™ product line, engineered specifically for high-temperature, high-reliability power switching in engine compartments, ADAS, and electrified vehicle subsystems.

FAQ

What is the maximum allowable PCB copper area to achieve R_θJA = 64.5°C/W?

The datasheet specifies that R_θJA = 64.5°C/W is achieved using a 1-inch square (25.4mm × 25.4mm) 2oz copper pad connected to the exposed drain terminal. Smaller pads increase thermal resistance linearly - e.g., a 0.5-inch square raises R_θJA to ~100°C/W. Thermal vias (≥6× 0.3mm diameter, filled or plated) to inner-layer ground planes further improve dissipation.

Does DMTH4008LFDFW-13 support gate driving from a 3.3V microcontroller?

Yes - its gate threshold voltage (V_GS(TH)) ranges from 1.0V to 3.0V, and R_DS(ON) is specified at 4.5V (18mΩ), ensuring reliable turn-on with 3.3V logic. However, conduction loss increases ~58% versus 10V drive; verify thermal margin at full load using the normalized R_DS(ON) vs. temperature curves in Figures 5 and 7.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

The integrated body diode has V_SD = 0.8–1.0V at 10A and t_RR = 19.6ns, making it usable for low-duty-cycle freewheeling. However, its Q_RR = 8.2nC contributes to switching loss - for high-efficiency synchronous rectification, external Schottky or active gate control is recommended to minimize reverse recovery effects.

How does the 100% UIS test differ from standard avalanche rating?

Unlike typical "rated" avalanche energy, the 100% UIS test subjects every production unit to a controlled 14.7A/32.4mJ inductive pulse (L = 0.3mH) - verifying actual ruggedness rather than statistical sampling. This eliminates latent failures in safety-critical automotive loads like fuel pumps and ABS solenoids where single-event failure is unacceptable.