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Diodes Incorporated DMTH4008LPDW-13
- Part No.:
- DMTH4008LPDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH4008LPDW-13.pdf
- Description:
- MOSFET 2N-CH 40V 10A PWRDI50
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
DMTH4008LPDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for 40V VDSS, 12.3mΩ RDS(ON) @ 10V VGS, and 46.2A ID at TC = +25°C, operating up to +175°C junction temperature. It serves as a high-efficiency synchronous rectifier or power switch in DC-DC converters.
For engineers reviewing the DMTH4008LPDW-13 datasheet, DMTH4008LPDW-13 pinout, DMTH4008LPDW-13 application, or DMTH4008LPDW-13 equivalent, key selection criteria include RDS(ON) at 4.5V (17.5mΩ), wettable flank terminals for automated optical inspection, 100% UIS-rated ruggedness, and thermal performance with RθJC = 3.8°C/W.
Technical Context
This dual N-channel MOSFET integrates two identical silicon die in a single exposed-drain PowerDI5060-8/SWP package, sharing no internal connection between channels-each channel has independent source, drain, and gate terminals. Its design emphasizes low conduction loss and fast switching: Ciss = 881pF, Qg = 12.3nC @ 10V, tF = 4.83ns, and body diode tRR = 31.9ns with QRR = 25.0nC.
The device supports high ambient operation via 175°C-rated silicon and packaging, validated by 100% unclamped inductive switching (UIS) testing in production. Thermal resistance from junction to case is 3.8°C/W, enabling high-power density designs when mounted on thermally enhanced PCBs with soldered drain pads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40V - Maximum blocking voltage before avalanche; defines safe operating range in 12V–36V input DC-DC stages. |
| RDS(ON) @ 10V | 12.3mΩ max - Enables ≤0.5W conduction loss at 20A, critical for high-current synchronous buck output stages. |
| RDS(ON) @ 4.5V | 17.5mΩ max - Ensures robust turn-on with 5V gate drive, supporting controller ICs without dedicated bootstrap or level-shift circuitry. |
| ID (TC = 25°C) | 46.2A - Continuous current rating under ideal heatsinking; sets upper bound for peak-load capability in compact power modules. |
| TJ Range | −55°C to +175°C - Supports under-hood automotive, industrial motor drives, and high-reliability power supplies where ambient exceeds 125°C. |
| Qg @ 10V | 12.3nC - Determines gate driver power requirement and switching transition time; enables <15ns total switching delay with 3Ω Rg. |
| UIS Rating | 100% production-tested - Guarantees survivability during transient overloads (e.g., load dump, inductive kickback) without derating. |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UXD), surface-mount, thermally enhanced with exposed drain pad. Wettable flank terminals enable automated optical inspection of solder joints.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Low-side return path for first MOSFET; electrically isolated from S2 and all drains. |
| D1 | Drain of Channel 1 | High-side switching node for Channel 1; connected to exposed thermal pad for heat dissipation. |
| G1 | Gate of Channel 1 | Control input for Channel 1; requires ≤±20V drive; VGS(TH) = 1.2–2.3V ensures reliable turn-on at 4.5V logic. |
| S2 | Source of Channel 2 | Independent return path for second MOSFET; not internally tied to S1 or any drain. |
| D2 | Drain of Channel 2 | Second high-side switching node; shares same thermal pad as D1 but electrically isolated. |
| G2 | Gate of Channel 2 | Independent control input; identical threshold and drive requirements as G1. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C Junction Rating | Enables operation in engine control units, industrial inverters, and sealed power enclosures without forced cooling. |
| Wettable Flank Terminals | Facilitates AOI detection of solder fillet integrity on all eight side pins-critical for automotive AEC-Q200-compliant assembly. |
| 100% UIS Production Test | Each unit verified for avalanche energy handling (EAS = 26.6mJ), eliminating field failures due to inductive transients. |
| Low Qgd/Qg Ratio | Qgd = 1.6nC / Qg = 12.3nC ≈ 13% - Reduces Miller-induced shoot-through risk in high-frequency synchronous rectification. |
| Halogen- & Antimony-Free | Meets JEDEC J-STD-709B green chemistry standards (<900ppm Br/Cl, <1000ppm Sb), supporting RoHS 3 and automotive ELV compliance. |
Applications
| Automotive DC-DC Converter | Industrial Motor Drive Half-Bridge |
|---|---|
Use Scenario: 12V-to-5V/3.3V buck converter in ADAS camera module with ambient up to 105°C. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary side; replaces Schottky diode to reduce conduction loss and improve efficiency above 85%. Use Value: 12.3mΩ RDS(ON) cuts rectifier loss by >60% vs. 40V Schottky, enabling passive cooling in space-constrained housing. |
Use Scenario: Low-voltage (24V) BLDC motor gate driver stage requiring dual high-side switches. IC Role / Device Role / Timing Role: Dual N-channel high-side switch with integrated bootstrap diode emulation via body diode conduction. Use Value: Independent G1/G2 control allows staggered turn-on to limit dV/dt stress; 175°C rating sustains operation during motor stall conditions. |
| Telecom PoE++ PD Controller | Server VRM Output Stage |
Use Scenario: Powered Device (PD) interface for IEEE 802.3bt Type 4 (up to 90W) with thermal management constraints. IC Role / Device Role / Timing Role: Primary pass transistor in hot-swap and inrush limiting circuit; handles continuous 3.8A at full load. Use Value: 17.5mΩ RDS(ON) @ 4.5V ensures compatibility with standard 5V gate drivers while maintaining <300mW dissipation at full current. |
Use Scenario: Multiphase 48V-to-1V VRM in AI accelerator card with peak current >400A per phase. IC Role / Device Role / Timing Role: High-current, low-RDS(ON) power stage switch; operated in paralleled configuration for current sharing. Use Value: Exposed drain pad and 3.8°C/W RθJC allow direct thermal interface to copper busbar, reducing junction-to-PCB ΔT by >25°C vs. SO-8 equivalents. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH4008LPDWQ-13 | Identical silicon and package, but qualified to AEC-Q101 with PPAP support and IATF 16949 manufacturing. | Required for automotive production programs; not needed for industrial or telecom prototypes. | Select when automotive qualification, change control, or traceability documentation is mandatory. |
| NTMFS4C027NT1G | 40V, 2.7mΩ @ 10V, 100A ID, SO-8FL package; higher current, lower RDS(ON), but no wettable flanks and only 150°C TJ. | Better for ultra-high-efficiency server VRMs; unsuitable for AOI-dependent automotive lines. | Choose only if RDS(ON) reduction outweighs thermal and inspection requirements. |
Compared with DMTH4008LPDWQ-13, the base part lacks automotive qualification but offers identical electrical and thermal performance at lower cost; versus NTMFS4C027NT1G, it trades 3.8× higher RDS(ON) for guaranteed 175°C operation and manufacturable wettable flanks-critical for high-reliability, inspection-critical applications.
Availability
DMTH4008LPDW-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and telecom PoE++ powered devices requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for DMTH4008LPDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.
This device belongs to Diodes' Power MOSFET portfolio targeting high-efficiency, high-temperature power conversion-designed specifically for automotive, industrial, and infrastructure applications demanding ruggedness and thermal resilience.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The DMTH4008LPDW-13 supports 32.7A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerDI5060-8/SWP package and must be applied when heatsinking is constrained or ambient temperature exceeds 85°C.
Does this MOSFET have an integrated body diode, and what is its forward voltage?
Yes, each channel includes a monolithic body diode with typical VSD = 0.9V at IS = 20A and TA = 25°C. The diode is rated for 43.7A continuous forward current and exhibits tRR = 31.9ns and QRR = 25.0nC, making it suitable for synchronous rectification in hard-switched topologies.
Can DMTH4008LPDW-13 be used in parallel configurations?
Yes-its positive temperature coefficient for RDS(ON) (normalized increase with junction temperature, per Figure 6) enables inherent current sharing between paralleled units. However, matched gate drive layout and symmetrical PCB thermal paths are required to ensure balanced dynamic current distribution.
Is the PowerDI5060-8/SWP package compatible with standard reflow profiles?
Yes-the package is rated for Moisture Sensitivity Level 1 per J-STD-020 and uses matte tin annealed terminals compliant with MIL-STD-202, Method 208. It supports standard lead-free reflow profiles (peak 260°C, 20–40s above 217°C) without popcorn or delamination when stored per MSL guidelines.
DMTH4008LPDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta), 46.2A (Tc)
- Rds On (Max) @ Id, Vgs:
- 12.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 881pF @ 20V
- Power - Max:
- 2.67W (Ta), 39.4W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type UXD)
DMTH4008LPDW-13 FAQ
1.How can I place an order for DMTH4008LPDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH4008LPDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH4008LPDW-13 reliable?
The price and inventory of DMTH4008LPDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH4008LPDW-13 is usually 5 days.
3.What payment methods are accepted for DMTH4008LPDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH4008LPDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH4008LPDW-13?
DMTH4008LPDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH4008LPDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH4008LPDW-13?
For technical support, including DMTH4008LPDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH4008LPDW-13 requirements.
6.How does Aetrix verify that DMTH4008LPDW-13 is sourced from the original manufacturer or authorized distributors?
All DMTH4008LPDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH4008LPDW-13 meets industry standards.
7.What is the process for return or replacement of DMTH4008LPDW-13?
All DMTH4008LPDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH4008LPDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH4008LPDW-13 part is unused and in its original packaging.
Return procedure for DMTH4008LPDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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