Diodes Incorporated DMTH4011SPDQ-13

Overview

DMTH4011SPDQ from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET rated for 40V V_DSS, 15 mΩ R_DS(ON) at V_GS = 10 V, and 42 A continuous drain current at T_C = +25°C. It is AEC-Q101 qualified, PPAP-capable, and designed for automotive power-management functions including DC-DC converters and LED backlighting in high-temperature environments up to +175°C.

For engineers reviewing the DMTH4011SPDQ datasheet, DMTH4011SPDQ pinout, DMTH4011SPDQ application, or DMTH4011SPDQ equivalent, key selection criteria include its dual-channel PowerDI5060-8 (Type C) package, 100% unclamped inductive switching rating, low gate charge (10.6 nC), and thermal resistance of 4°C/W (junction-to-case).

Technical Context

This dual N-channel MOSFET integrates two matched silicon die in a single exposed-drain PowerDI5060-8 (Type C) package, enabling space-efficient half-bridge or dual-switch topologies. Its gate threshold voltage (2–4 V) supports standard 3.3 V and 5 V logic-level drive, while the 2.76 Ω gate resistance and 15 pF Crss ensure controlled switching with minimal ringing.

The device features a robust body diode with 10.2 ns reverse recovery time and 9.6 nC Q_RR, optimized for synchronous rectification in buck and boost converters. Thermal design is supported by a low R_θJC of 4°C/W and junction temperature range of –55°C to +175°C, validated under AEC-Q101 stress testing.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (Type C), surface-mount, exposed drain pad for thermal and electrical connection. Molded green compound (UL 94V-0), matte tin–annealed terminals, MSL Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Compared with STL220N4F7AG and IXTP44N10P, the DMTH4011SPDQ uniquely balances AEC-Q101 compliance, dual-channel integration in a thermally efficient 5×6 mm package, and verified 175°C operation - making it the only option qualified for production-critical automotive power stages requiring PPAP and zero derating at 150°C ambient.

Availability

DMTH4011SPDQ is available at Aetrix Electronics and suitable for automotive LED backlighting, 12 V DC-DC converters, engine control unit power management, and HVAC blower motor drivers requiring stable component supply across multi-year vehicle production cycles.

Supply support for DMTH4011SPDQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMTH4011SPDQ belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for automotive power conversion and load switching where thermal resilience, avalanche ruggedness, and PPAP readiness are mandatory.

FAQ

Is DMTH4011SPDQ suitable for synchronous rectification in a 400 kHz buck converter?

Yes. With 10.6 nC total gate charge, 1.9 ns fall time, and 10.2 ns body diode reverse recovery time, the DMTH4011SPDQ supports clean zero-voltage switching at 400 kHz in buck topologies. Its 11.6–15 mΩ R_DS(ON) ensures <1.2 W conduction loss at 20 A, and the 4°C/W R_θJC enables direct thermal coupling to PCB copper for stable operation.

What is the maximum allowable gate drive voltage for reliable long-term operation?

The absolute maximum gate-source voltage is ±20 V, but for robust lifetime performance in automotive applications, Diodes specifies 10 V as the nominal enhancement voltage. Gate drive above 12 V yields diminishing R_DS(ON) improvement while increasing oxide stress; sustained operation at 15 V or higher is not recommended per reliability testing in DS39465 Rev. 5.

How is the shared drain (D1/D2) configured internally, and can it be used for paralleling?

D1 and D2 are electrically bonded to the same exposed copper drain pad, confirmed by the top-view pinout diagram and mechanical outline. This configuration supports true paralleling of both channels for 84 A aggregate current, provided gate drive and PCB layout maintain equal current sharing - verified in Diodes' SOA curves (Figure 12) up to 70 A pulsed.

Does the DMTH4011SPDQ require external gate resistors for automotive EMI compliance?

Yes. While the intrinsic gate resistance is 2.76 Ω, automotive CISPR 25 Class 5 EMI limits require controlled dV/dt. Diodes recommends 5–10 Ω series gate resistors per channel to limit turn-on dV/dt to <15 V/ns and suppress high-frequency ringing - validated in application note AP02011 for PowerDI5060-8 packages in 12 V systems.