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Diodes Incorporated DMTH4011SPDWQ-13
- Part No.:
- DMTH4011SPDWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH4011SPDWQ-13.pdf
- Description:
- MOSFET 2N-CH 40V 11.1A PWRDI50
- Quantity:
- Payment:
- Shipping:
Inventory:6,743
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Product details
Overview
DMTH4011SPDWQ from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET rated for 40V VDSS, 15 mΩ RDS(ON) @ VGS = 10V, and 42A continuous drain current at TC = +25°C. It features AEC-Q101 qualification, +175°C maximum junction temperature, and PowerDI5060-8/SWP package - designed for automotive DC-DC converters and power-management functions where high ambient temperature resilience and robust unclamped inductive switching are required.
For engineers reviewing the DMTH4011SPDWQ datasheet, DMTH4011SPDWQ pinout, DMTH4011SPDWQ application, or DMTH4011SPDWQ equivalent, key selection criteria include its 4 Ω·mm² RDS(ON)·A figure-of-merit, 10.6 nC total gate charge, 100% UIS-rated ruggedness, and thermal resistance of 4 °C/W (junction-to-case), critical for thermally constrained automotive power stages.
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices in a single PowerDI5060-8/SWP thermally enhanced package with exposed drain pads. Its gate threshold voltage (2–4 V) enables compatibility with 3.3 V and 5 V logic-level drive, while low input capacitance (805 pF Ciss) and fast switching times (tr = 3.8 ns, tf = 1.9 ns) support high-frequency synchronous buck operation up to 1 MHz.
The device implements a common-source, independent-gate topology with separate source terminals (S1, S2) and shared drain thermal pad. Body diode parameters - including 1.2 V VSD @ 20 A and 10.2 ns tRR - are characterized across -55°C to +175°C, enabling reliable reverse-recovery behavior in boost and flyback topologies under wide temperature excursions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 12 V/24 V automotive bus applications. |
| RDS(ON) | 15 mΩ max @ VGS = 10 V, ID = 20 A - Low conduction loss enables <1.5 W dissipation at 42 A, reducing heatsink requirements. |
| ID (TC = 25°C) | 42 A - Continuous drain current rating at case temperature; validated with 37.5 W power dissipation capability. |
| Qg | 10.6 nC - Total gate charge determines driver strength requirement; supports efficient 1–2 A peak gate drive at 500 kHz–1 MHz. |
| RθJC | 4 °C/W - Junction-to-case thermal resistance measured on exposed drain pad; enables direct thermal coupling to PCB copper or heatsink. |
| trr | 10.2 ns - Body diode reverse-recovery time at IF = 15 A, di/dt = 400 A/μs; minimizes switching loss and EMI in hard-switched topologies. |
| TJ max | +175°C - Maximum junction temperature rating; allows operation in engine bay or under-hood environments without derating. |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UXD), surface-mount, thermally enhanced molded plastic with exposed drain pad (pins 1, 4, 5, 8 tied internally to D1/D2). Moisture sensitivity level 1 per J-STD-020; matte tin annealed copper leadframe; UL 94V-0 compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Source 1 (S1) | Low-side return path for first MOSFET channel; electrically isolated from S2 for independent half-bridge configuration. |
| Pin 2 | Gate 1 (G1) | Control terminal for first channel; requires 2–4 V threshold drive; low 2.76 Ω gate resistance aids fast turn-on. |
| Pin 3 | Drain 1 (D1) | High-current output node connected to exposed thermal pad; shares internal drain connection with Pin 4. |
| Pin 4 | Drain 2 (D2) | Second channel drain node; internally bonded to same thermal pad as Pin 3 for symmetrical heat spreading. |
| Pin 5 | Gate 2 (G2) | Independent control input for second channel; identical threshold and charge characteristics to G1. |
| Pin 6 | Source 2 (S2) | Return path for second channel; isolated from S1 to enable floating high-side or dual low-side switching. |
| Pins 7 & 8 | Exposed Drain Pad (D1/D2) | Primary thermal interface; must be soldered to ≥1 in² 2 oz copper pour for rated 37.5 W dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified & PPAP capable | Validated for automotive production use with full change control, IATF16949 manufacturing, and zero-defect screening. |
| 100% Unclamped Inductive Switching (UIS) | Ruggedness tested to 21.4 mJ EAS at IAS = 11.9 A - ensures survival during load dump or inductive kick events without external snubbers. |
| Low RDS(ON) × Qg product | ~159 mΩ·nC - balances conduction and switching losses for high-efficiency DC-DC conversion above 300 kHz. |
| +175°C operation with normalized RDS(ON) | RDS(ON) increases only 1.8× from 25°C to 175°C (Fig. 6) - maintains predictable loss profile across full automotive temperature range. |
| Halogen- and antimony-free "Green" construction | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets global environmental compliance mandates without performance trade-offs. |
Applications
| Automotive LED Backlighting | 12 V Automotive DC-DC Converters |
|---|---|
Use Scenario: High-brightness LED arrays in instrument clusters and center displays requiring PWM dimming and overvoltage protection. IC Role / Device Role / Timing Role: Dual low-side switch controlling parallel LED strings; one channel drives main backlight, the other handles auxiliary indicators. Use Value: 15 mΩ RDS(ON) limits conduction loss to <0.5 W per string at 2 A, while +175°C rating ensures reliability behind hot dashboard glass. | Use Scenario: Synchronous buck regulator supplying 5 V/3 A to ADAS camera modules from 12 V battery rail. IC Role / Device Role / Timing Role: Integrated high- and low-side switch pair in single-phase converter; G1/S1 controls high-side, G2/S2 controls low-side with dead-time management. Use Value: 10.6 nC Qg and 3.8 ns tr enable clean 500 kHz switching with <5% duty-cycle distortion, reducing output ripple below 20 mVpp. |
| Engine Control Unit (ECU) Power Management | Automotive HVAC Blower Motor Driver |
Use Scenario: Local 3.3 V/2 A supply for microcontroller and CAN transceiver within ECU housing near engine compartment. IC Role / Device Role / Timing Role: Dual-channel load switch isolating downstream circuits during sleep mode; each channel independently controlled via MCU GPIO. Use Value: 42 A rating provides 10× headroom for inrush current; 100% UIS rating prevents failure during 12 V battery transients up to ±100 V. | Use Scenario: PWM-controlled 24 V blower motor in climate control system with variable speed and stall detection. IC Role / Device Role / Timing Role: Half-bridge driver with S1/G1 controlling high-side, S2/G2 controlling low-side; body diode conducts freewheeling current during off-time. Use Value: 1.2 V VSD and 10.2 ns trr minimize freewheeling loss and voltage spikes, extending motor brush life and reducing EMI filter size by 30%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH4007SPDWQ-13 | Lower RDS(ON) (7.5 mΩ @ 10 V), higher Qg (16.5 nC), same package and AEC-Q101 rating. | Better conduction efficiency but slower switching; suited for <300 kHz converters prioritizing low static loss. | Select when thermal budget allows larger gate driver; avoid if layout lacks space for extra gate loop inductance. |
| IPB80N04S4-02 | Single-channel TO-263 package, 2.0 mΩ RDS(ON), no integrated dual topology; requires two devices for equivalent function. | Higher board area and routing complexity; lacks monolithic thermal coupling between channels. | Choose only if discrete layout flexibility outweighs thermal and footprint advantages of PowerDI5060-8 integration. |
Compared with DMTH4011SPDWQ, DMTH4007SPDWQ trades 47% lower RDS(ON) for 55% higher Qg, increasing gate drive loss but reducing conduction loss by >60% at 20 A; IPB80N04S4-02 delivers lower on-resistance but doubles component count and eliminates matched-channel timing benefits.
Availability
DMTH4011SPDWQ is available at Aetrix Electronics and suitable for automotive LED backlighting, 12 V DC-DC converters, and ECU power management requiring stable component supply, AEC-Q101 compliance, and extended temperature operation.
Supply support for DMTH4011SPDWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMTH4011SPDWQ belongs to Diodes' automotive-qualified PowerMOS family, engineered specifically for high-reliability power conversion and load switching in harsh-temperature vehicle subsystems.
FAQ
What is the maximum allowable gate-source voltage for DMTH4011SPDWQ?
The absolute maximum VGS is ±20 V per the datasheet's Maximum Ratings table. Operation beyond ±12 V is not recommended for long-term reliability, and gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching transitions, especially in noisy automotive environments.
Can DMTH4011SPDWQ be used in a synchronous boost configuration?
Yes - its dual independent-gate structure supports synchronous boost when configured with S1/G1 as low-side switch and S2/G2 as high-side switch driving an external bootstrap circuit. The 1.2 V body diode forward voltage and 10.2 ns reverse recovery time ensure minimal conduction loss and voltage spike during diode commutation, provided gate drive timing avoids shoot-through.
Is the exposed drain pad electrically isolated between D1 and D2?
No - Pins 3 (D1) and 4 (D2) are internally connected to the same exposed copper drain pad. This common thermal and electrical node simplifies PCB layout but requires careful isolation of source terminals (S1, S2) and gate traces to maintain channel independence in half-bridge or dual-switch configurations.
Does DMTH4011SPDWQ require external gate resistors for automotive EMI compliance?
Yes - although the device has low intrinsic gate resistance (2.76 Ω), a series gate resistor (typically 5–10 Ω) is required to dampen ringing caused by PCB trace inductance and meet CISPR 25 Class 5 radiated emissions limits. Resistor value must balance EMI suppression against increased switching loss and tr/tf degradation.
DMTH4011SPDWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 11.1A (Ta), 42A (Tc)
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 805pF @ 20V
- Power - Max:
- 2.6W (Ta), 37.5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (SWP)
DMTH4011SPDWQ-13 FAQ
1.How can I place an order for DMTH4011SPDWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH4011SPDWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH4011SPDWQ-13 reliable?
The price and inventory of DMTH4011SPDWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH4011SPDWQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH4011SPDWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH4011SPDWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH4011SPDWQ-13?
DMTH4011SPDWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH4011SPDWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH4011SPDWQ-13?
For technical support, including DMTH4011SPDWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH4011SPDWQ-13 requirements.
6.How does Aetrix verify that DMTH4011SPDWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH4011SPDWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH4011SPDWQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH4011SPDWQ-13?
All DMTH4011SPDWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH4011SPDWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH4011SPDWQ-13 part is unused and in its original packaging.
Return procedure for DMTH4011SPDWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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