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Diodes Incorporated DMTH4014LDVW-13

Part No.:
DMTH4014LDVW-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-PowerVDFN
Datasheet:
AetrixDMTH4014LDVW-13.pdf
Description:
MOSFET 2N-CH 40V 10.2A PWRDI3333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,177

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Product details

Overview

DMTH4014LDVW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in POWERDI®3333-8/SWP package, rated for 40V VDSS, 15 mΩ RDS(ON) @ 10V VGS, and 27.5A continuous drain current at TC = +25°C. It operates up to +175°C junction temperature and supports high-efficiency power conversion in compact DC-DC and wireless charging systems.

For engineers reviewing the DMTH4014LDVW-13 datasheet, DMTH4014LDVW-13 pinout, DMTH4014LDVW-13 application, or DMTH4014LDVW-13 equivalent, this page delivers verified electrical specs, thermal performance data, wettable flank packaging details, and real-world switching behavior for automotive-grade power management design validation.

Technical Context

This dual N-channel MOSFET integrates two identical silicon die in a single thermally optimized POWERDI3333-8 package with isolated source terminals and shared drain connections per channel. Its low RDS(ON) (12.8 mΩ typ @ 10V) and fast switching (tR = 4.6 ns, tF = 4.9 ns) enable high-frequency synchronous rectification and load switching.

The device features 100% production-tested UIS capability (IAS = 19.8 A, EAS = 19.6 mJ), robust gate oxide (±20 V VGSS), and body diode recovery time (tRR = 11.3 ns) optimized for hard-switched topologies. Thermal resistance RθJC = 7.8 °C/W confirms efficient heat transfer to PCB copper planes.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 40 V - Supports 36V nominal bus systems with 10% margin for transients
RDS(ON) @ 10V 12.8 mΩ (typ) - Enables ≤0.5 W conduction loss at 20A, critical for thermal budget control
ID (TC = 25°C) 27.5 A - Sustains high-current pulsed loads in DC-DC phase legs without derating
Qg @ 10V 11.2 nC - Low gate charge reduces driver power and enables >1 MHz PWM operation
tRR 11.3 ns - Minimizes reverse recovery losses in synchronous buck converters
TJ max +175°C - Qualified for under-hood automotive and industrial environments with no derating
RθJC 7.8 °C/W - Confirms direct thermal path to heatsink or copper pour for high-power density layouts

Pinout & Package

Package: POWERDI®3333-8/SWP (Type UXD), surface-mount, wettable flank, 3.3 mm × 3.3 mm footprint, 0.8 mm height, 0.65 mm pitch, matte tin annealed terminals.

Pin/Terminal Circuit Role Design Meaning
D1, D2 Drain 1 / Drain 2 High-current output nodes; electrically isolated but thermally coupled in package
S1, S2 Source 1 / Source 2 Independent return paths enabling dual-phase or half-bridge configurations
G1, G2 Gate 1 / Gate 2 Separate control inputs allow independent switching or paralleled drive
Exposed Pad Thermal Pad / Case Primary heat dissipation path; must be soldered to ≥1-inch² 2 oz copper for RθJA = 57.5 °C/W

Key Features

Feature Design Value
+175°C rated operation Validated for continuous use in engine bay, motor control, and industrial power supplies without thermal throttling
100% UIS tested Each unit passes unclamped inductive switching stress (L = 0.1 mH), ensuring field reliability in flyback and boost converters
Wettable flank leads Vertical sidewall plating enables automated optical inspection (AOI) of solder joint integrity on bottom-side terminations
Low Ciss (750 pF) Reduces Miller effect, easing gate drive design and improving noise immunity in high-dV/dt environments
Halogen & antimony free Meets IEC 61249-2-21 "Green" standard (<900 ppm Br/Cl, <1000 ppm Sb), supporting automotive PPAP compliance

Applications

Wireless Charging Transmitter Automotive DC-DC Converter

Use Scenario: High-frequency (100–205 kHz) resonant power stage driving Qi-compliant transmitter coils.

IC Role / Device Role / Timing Role: Dual N-channel switch implementing half-bridge topology with synchronous rectification control.

Use Value: 15 mΩ RDS(ON) minimizes conduction loss at 20A peak coil current; 11.3 ns tRR suppresses body diode ringing during zero-voltage switching transitions.

Use Scenario: 12V-to-5V/3.3V step-down converter in ADAS camera modules requiring AEC-Q101 qualification.

IC Role / Device Role / Timing Role: Primary-side power switch in synchronous buck regulator operating at 500 kHz switching frequency.

Use Value: +175°C rating ensures stable operation near radar sensors; wettable flanks enable AOI verification for zero-defect automotive manufacturing.

Server VRM Phase Leg Industrial Motor Drive H-Bridge

Use Scenario: Multiphase voltage regulator module supplying CPU core power in data center servers.

IC Role / Device Role / Timing Role: High-side/low-side pair per phase leg, driven by digital PWM controller with adaptive dead-time control.

Use Value: 11.2 nC Qg allows efficient gate driving at 1 MHz; 7.8 °C/W RθJC supports thermal coupling to VRM heatsink via exposed pad.

Use Scenario: 24V BLDC motor driver for HVAC blowers in commercial building automation systems.

IC Role / Device Role / Timing Role: Half-bridge upper/lower switches controlling three-phase inverter bridge with 10 kHz PWM.

Use Value: 19.8 A IAS withstands motor stall currents; 129 °C/W RθJA (FR-4) supports fanless enclosure designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMTH4014LSDW-13 Same die, but POWERDI5060-8 package (5.0 mm × 6.0 mm); RθJA = 42 °C/W (enhanced thermal performance) Better suited for >30W continuous power where board space permits larger footprint Select when thermal headroom is constrained and PCB area allows 5×6 mm layout
IPD95R1K2P7ATMA1 950V SiC MOSFET, 1.2 Ω RDS(ON), higher VGS threshold (3.5 V), slower switching (tF = 25 ns) Targeted at high-voltage PFC and solar inverters, not low-voltage DC-DC Not interchangeable-only consider for 400V+ systems requiring wide-bandgap efficiency gains

Compared with DMTH4014LDVW-13, DMTH4014LSDW-13 offers superior thermal resistance but requires more PCB area, while IPD95R1K2P7ATMA1 serves entirely different voltage-class applications and cannot replace it in 40V systems.

Availability

DMTH4014LDVW-13 is available at Aetrix Electronics and suitable for wireless charging transmitters, automotive DC-DC converters, and server VRM phase legs requiring stable component supply across extended temperature ranges and high-reliability production cycles.

Supply support for DMTH4014LDVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' POWERDI® high-power MOSFET product line, engineered specifically for space-constrained, thermally demanding power conversion in automotive, industrial, and computing applications.

FAQ

What is the maximum allowable gate-source voltage for DMTH4014LDVW-13?

The absolute maximum VGS rating is ±20 V, as specified in the Maximum Ratings table. Operation beyond this range risks irreversible gate oxide damage. For reliable switching, gate drive should be limited to 10 V for full enhancement or 4.5 V for logic-level compatibility, both well within safe margins.

Does DMTH4014LDVW-13 meet AEC-Q101 requirements?

Yes-this part is qualified to AEC-Q101 Rev D for discrete semiconductors. The datasheet explicitly states suitability for automotive applications requiring AEC-Q100/101/200 qualification, PPAP capability, and IATF 16949-certified manufacturing. Full test reports are available upon request through Diodes' automotive support team.

How does the wettable flank feature improve manufacturability?

The vertical sidewall plating on all four side terminals enables automated optical inspection (AOI) of solder fillet formation during reflow. This eliminates reliance on X-ray for void detection and improves first-pass yield in high-volume automotive and industrial assembly lines where zero-defect solder joints are mandatory.

Can DMTH4014LDVW-13 be used in parallel configurations?

Yes-the matched dual die architecture and low RDS(ON) tolerance (15 mΩ max @ 10V) support current sharing between channels when gate drive impedance and PCB layout symmetry are balanced. However, external gate resistors (≥1 Ω) are recommended to dampen oscillation and ensure simultaneous turn-on/turn-off.

DMTH4014LDVW-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
10.2A (Ta), 27.5A (Tc)
Rds On (Max) @ Id, Vgs:
15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
750pF @ 20V
Power - Max:
1.16W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI3333-8 (Type UXD)

DMTH4014LDVW-13 FAQ

1.How can I place an order for DMTH4014LDVW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH4014LDVW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH4014LDVW-13 reliable?

The price and inventory of DMTH4014LDVW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH4014LDVW-13 is usually 5 days.

3.What payment methods are accepted for DMTH4014LDVW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH4014LDVW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH4014LDVW-13?

DMTH4014LDVW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH4014LDVW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH4014LDVW-13?

For technical support, including DMTH4014LDVW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH4014LDVW-13 requirements.

6.How does Aetrix verify that DMTH4014LDVW-13 is sourced from the original manufacturer or authorized distributors?

All DMTH4014LDVW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH4014LDVW-13 meets industry standards.

7.What is the process for return or replacement of DMTH4014LDVW-13?

All DMTH4014LDVW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH4014LDVW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH4014LDVW-13 part is unused and in its original packaging.

Return procedure for DMTH4014LDVW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH4014LDVW-13 Tags

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