My Inquiry
My Account
Diodes Incorporated DMTH4014LDVW-7
- Part No.:
- DMTH4014LDVW-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMTH4014LDVW-7.pdf
- Description:
- MOSFET 2N-CH 40V 10.2A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:6,988
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMTH4014LDVW-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in POWERDI3333-8 package, rated for 40V VDSS, 15 mΩ RDS(ON) @ 10V VGS, and 27.5A continuous drain current at TC = +25°C, operating up to +175°C junction temperature. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and wireless charging systems.
For engineers reviewing the DMTH4014LDVW-7 datasheet, DMTH4014LDVW-7 pinout, DMTH4014LDVW-7 application, or DMTH4014LDVW-7 equivalent, this page provides verified electrical parameters, thermal performance data, wettable flank package details, and validated alternatives for automotive-grade power management designs.
Technical Context
This dual N-channel MOSFET integrates two identical silicon die in a single POWERDI3333-8 thermally enhanced leadframe package with wettable flanks. Each channel supports independent gate control, with matched RDS(ON) (12.8–15 mΩ @ 10V) and low Ciss (750 pF), enabling synchronous rectification and high-frequency PWM operation.
It features 100% production-tested UIS capability (19.8 A IAS, 19.6 mJ EAS) and operates across –55°C to +175°C, with normalized RDS(ON) variation ≤1.3× over full temperature range - critical for under-hood automotive and industrial power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Supports 24V/36V nominal bus systems with 2× safety margin against transients |
| RDS(ON) @ 10V | 12.8–15 mΩ - Enables <1.2 W conduction loss at 20A, reducing heatsink requirements |
| RDS(ON) @ 4.5V | 19.4–25 mΩ - Ensures robust operation with 5V logic-level gate drive in compact converters |
| Qg @ 10V | 11.2 nC - Low gate charge enables efficient 1–2 MHz switching without excessive driver loss |
| tR/tF | 4.6 ns / 4.9 ns - Fast edge rates minimize switching transition losses in high-frequency topologies |
| TJ max | +175°C - Qualified for under-hood automotive environments and sealed industrial enclosures |
| RθJC | 7.8°C/W - Enables direct thermal coupling to PCB copper or heatsink for >2.6 W steady-state dissipation |
Pinout & Package
Package: POWERDI®3333-8/SWP (Type UXD), surface-mount, thermally enhanced leadframe with wettable flanks for automated optical inspection and reliable solder joint formation. Dimensions: 3.30 × 3.30 × 0.80 mm (L × W × H), 0.65 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1, D2 | Drain 1 / Drain 2 | High-current output terminals; internally isolated, each rated for 27.5A continuous at TC = +25°C |
| S1, S2 | Source 1 / Source 2 | Power return paths; electrically separate, support independent synchronous rectifier or half-bridge configurations |
| G1, G2 | Gate 1 / Gate 2 | Independent MOSFET control inputs; 1.1 Ω gate resistance minimizes ringing with standard gate drivers |
| Pin 1 (marked) | Reference corner | Top-view marking "H4D" identifies device type; bottom-view Pin 1 aligns with D1–S1–G1 grouping |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated junction temperature | Validated operation up to 175°C TJ with <1.3× RDS(ON) drift - eliminates derating in high-ambient applications |
| 100% UIS tested in production | Each unit passes unclamped inductive switching test (19.8 A, 19.6 mJ) - ensures field reliability in flyback and boost converters |
| Wettable flank leads | Matte tin–annealed copper leads with 0.23 mm side-wall height - enables AOI detection of solder fillet integrity |
| Low Ciss/Coss ratio | 750 pF / 225 pF - improves hard-switching efficiency and reduces EMI in high-dV/dt environments |
| Halogen- and antimony-free | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets IPC-1752A Class 3 environmental compliance for automotive Tier-1 supply chains |
Applications
| Wireless Charging Transmitter | Automotive DC-DC Converter |
|---|---|
|
Use Scenario: High-frequency (100–300 kHz) resonant inverter stage driving Qi-compliant transmitter coils. IC Role / Device Role / Timing Role: Dual N-channel switch implementing half-bridge topology with synchronous body diode conduction during dead-time. Use Value: 15 mΩ RDS(ON) and 4.6 ns tR reduce total switching + conduction loss by ≥22% vs. comparable 40V SO-8 MOSFETs at 200 kHz. |
Use Scenario: 12V-to-5V/3.3V buck converter in ADAS camera modules exposed to under-hood ambient temperatures up to +125°C. IC Role / Device Role / Timing Role: High-side and low-side synchronous rectifier in fixed-frequency 500 kHz controller-based regulator. Use Value: +175°C rating and 7.8°C/W RθJC allow full 22A load capability without external heatsink at TA = +105°C. |
| Industrial Motor Drive Inverter | USB-C PD Power Delivery |
|
Use Scenario: Three-phase gate driver companion in 24V BLDC motor controllers for HVAC blowers and pumps. IC Role / Device Role / Timing Role: Low-side switch in inverter leg, handling 15A RMS phase current with 100% duty cycle capability. Use Value: 25 mΩ RDS(ON) @ 4.5V ensures stable on-resistance down to 5V gate drive, eliminating level-shifter complexity. |
Use Scenario: Secondary-side synchronous rectifier in 100W USB-C PD 3.1 AC-DC adapter with GaN primary. IC Role / Device Role / Timing Role: Dual-channel rectifier replacing two discrete Schottky diodes in center-tapped secondary winding. Use Value: 1.0–1.2 V VSD body diode forward voltage and 11.3 ns tRR enable zero-voltage switching recovery, improving efficiency by 1.8% at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH4014LSDQ-7 | Same silicon die, but in smaller POWERDI5060-8 package (5.0 × 6.0 mm); RθJA = 62°C/W (vs. 57.5°C/W here) | Higher board space cost, lower thermal performance - suitable only where footprint dominates thermal design | Select only if PCB layout constraints prevent use of POWERDI3333-8's 3.3 mm × 3.3 mm footprint. |
| IPD95R1K2P7ATMA1 | Single 950V SiC MOSFET; 1200 mΩ RDS(ON); no dual-channel integration; requires external gate driver | Targeted at >400V PFC stages - not functionally substitutable due to voltage class, topology, and drive architecture mismatch | Not a drop-in replacement; consider only for new 800V+ system architectures requiring wide-bandgap performance. |
Compared with DMTH4014LDVW-7, DMTH4014LSDQ-7 trades 10% higher thermal resistance for larger pad area, while IPD95R1K2P7ATMA1 serves entirely different high-voltage applications - neither replicates the dual-channel, 40V, +175°C optimized performance of the original.
Availability
DMTH4014LDVW-7 is available at Aetrix Electronics and suitable for wireless charging transmitters, automotive DC-DC converters, and industrial motor drives requiring stable component supply, extended temperature qualification, and wettable flank process compatibility.
Supply support for DMTH4014LDVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
This device belongs to Diodes' POWERDI® high-temperature MOSFET product line, engineered specifically for compact, thermally constrained power stages where +175°C operation, low RDS(ON), and production-tested ruggedness are mandatory.
FAQ
What is the maximum continuous drain current per channel at TC = +100°C?
The DMTH4014LDVW-7 supports 19.5 A continuous drain current per channel at case temperature +100°C when VGS = 10 V. This value is specified in the Absolute Maximum Ratings table and confirmed by thermal derating curves showing ≤1.3× RDS(ON) increase up to +175°C junction temperature.
Does this MOSFET require external gate resistors for stable switching?
No external gate resistor is required for basic stability: the device has an intrinsic gate resistance of 1.1 Ω and exhibits clean 4.6 ns rise time with 1.6 Ω external driver resistance per the datasheet test condition. However, a 2–5 Ω series resistor is recommended to dampen potential ringing in layouts with long gate traces or high parasitic inductance.
Is the POWERDI3333-8 package compatible with standard reflow profiles for lead-free soldering?
Yes - the POWERDI3333-8/SWP package is qualified for JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard IPC/JEDEC lead-free reflow profiles (peak 260°C, 60 sec max). Its matte tin–annealed terminations meet MIL-STD-202 Method 208 solderability requirements without pre-baking.
Can both channels be paralleled to double current capacity?
No - the two channels share a common thermal path but are electrically isolated; paralleling them does not double current rating because junction temperature rise is coupled. The absolute maximum continuous drain current remains 27.5 A per channel at TC = +25°C, and thermal limits govern total power dissipation regardless of channel usage configuration.
DMTH4014LDVW-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 10.2A (Ta), 27.5A (Tc)
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 750pF @ 20V
- Power - Max:
- 1.16W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXD)
DMTH4014LDVW-7 FAQ
1.How can I place an order for DMTH4014LDVW-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH4014LDVW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH4014LDVW-7 reliable?
The price and inventory of DMTH4014LDVW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH4014LDVW-7 is usually 5 days.
3.What payment methods are accepted for DMTH4014LDVW-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH4014LDVW-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH4014LDVW-7?
DMTH4014LDVW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH4014LDVW-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH4014LDVW-7?
For technical support, including DMTH4014LDVW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH4014LDVW-7 requirements.
6.How does Aetrix verify that DMTH4014LDVW-7 is sourced from the original manufacturer or authorized distributors?
All DMTH4014LDVW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH4014LDVW-7 meets industry standards.
7.What is the process for return or replacement of DMTH4014LDVW-7?
All DMTH4014LDVW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH4014LDVW-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH4014LDVW-7 part is unused and in its original packaging.
Return procedure for DMTH4014LDVW-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMTH4014LDVW-7 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
